CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form. 15 dBS21 Gain & RLoss 10 Main Features ■ Broadband performances : 1-18 GHz ■ 14dB gain ■ 3dB typical Low Noise Figure ■ ±0.7 dB gain flatness ■ Die size : 2.15 X 1.42 X 0.10 mm 5 0 -5 -10 dBS11 -15 dBS22 -20 1 3 5 7 9 11 13 15 17 Frequency (GHz) On wafer measurements Main Characteristics Tamb. = 25°C Symbol Fop Parameter Min Operating frequency range G Small signal Gain NF Noise figure Id Bias current Typ 1 12.5 Max Unit 18 GHz 4 dB 14 95 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! DSCHA30235263 - 20 sep 05 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 19 1-18GHz Wide Band Amplifier CHA3023 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd=5V, Vg1=-0.3V tuned to have Id=95mA Vg2=+2V Symbol Fop Parameter Min Operating frequency range G 11.5 12.5 Small signal gain flatness P1dB VSWRin Output power at 1dB gain compression 15 Input VSWR DC voltage Id Bias current 18 GHz 13 14 dB dB ± 0.7 dB 17 dBm 2.2:1 Noise Figure F= 1 to 4GHz F= 1 to 18GHz Vdc Unit 2.2:1 VSWRout Output VSWR NF Max 1 Small signal gain F= 1 to 3GHz F= 3 to 18GHz ∆G Typ 4 2.5 Vd Vg1 Vg2 6 4 dB dB +5 -0.3 +2 V V V 95 mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Vd Drain to ground bias voltage Id Drain current Min. Max. Unit 0 6.5 V 110 mA Vg1 Gate to ground bias voltage -1.5 0.3 V Vg2 Gate to ground bias voltage 0 3 V Pin Maximun peak input power overdrive (2) +15 dBm Pin Maximum input CW power +10 dBm Top Operating temperature -40 85 °C Tstg Storage temperature range -55 125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage (2) Duration < 1s DSCHA30235263 - 20 sep 05 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 1-18 GHz Wide Band Amplifier CHA3023 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA Freq MS11 PS11 MS12 PS12 MS21 PS21 MS22 PS22 GHz dB ° dB ° dB ° dB ° 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 5,50 6,00 6,50 7,00 7,50 8,00 8,50 9,00 9,50 10,00 10,50 11,00 11,50 12,00 12,50 13,00 13,50 14,00 14,50 15,00 15,50 16,00 16,50 17,00 17,50 18,00 18,50 19,00 19,50 20,00 -11,84 -14,88 -16,59 -17,55 -17,90 -18,04 -17,90 -17,64 -17,43 -17,36 -17,32 -17,35 -17,55 -17,83 -18,45 -19,80 -20,69 -21,89 -23,72 -25,53 -26,70 -25,89 -24,09 -21,74 -19,70 -18,11 -17,00 -15,86 -14,97 -14,53 -13,93 -13,43 -13,18 -12,67 -11,85 -11,23 -10,46 -9,39 -8,65 -86,69 -96,63 -102,61 -106,89 -110,67 -114,80 -119,10 -124,04 -129,21 -134,92 -140,65 -146,35 -152,20 -157,72 -162,53 -164,62 -168,37 -169,76 -166,34 -158,58 -141,85 -122,93 -110,31 -106,76 -104,76 -106,18 -112,34 -116,67 -120,58 -124,94 -128,81 -132,05 -134,80 -137,46 -137,37 -139,77 -143,04 -147,86 -153,32 -68,86 -59,00 -57,76 -55,88 -56,09 -54,51 -53,45 -52,07 -52,57 -50,96 -49,52 -48,93 -48,40 -47,52 -46,94 -46,12 -45,55 -44,84 -44,04 -43,80 -43,12 -42,27 -41,97 -41,35 -41,15 -40,87 -40,38 -40,14 -39,83 -39,66 -39,29 -38,83 -38,87 -38,86 -37,71 -37,48 -37,24 -36,76 -36,48 12,95 -65,50 -85,24 -101,83 -133,36 -146,60 -166,51 178,88 165,06 155,03 145,22 131,37 115,97 106,26 95,20 84,24 74,79 62,64 53,09 39,38 26,47 14,98 2,10 -12,13 -24,23 -38,14 -49,23 -64,35 -75,76 -88,72 -102,25 -118,12 -127,14 -144,06 -156,10 -170,79 175,70 157,84 142,87 12,27 13,11 13,74 14,21 14,38 14,42 14,50 14,55 14,56 14,57 14,57 14,59 14,58 14,57 14,56 14,54 14,55 14,55 14,53 14,50 14,48 14,44 14,40 14,35 14,29 14,23 14,17 14,11 14,05 14,01 13,97 13,93 13,92 13,92 13,91 13,84 13,57 12,86 12,02 175,21 164,60 152,90 140,45 127,54 116,64 105,01 93,81 82,83 71,87 61,00 50,26 39,44 28,65 17,95 7,35 -3,41 -14,27 -25,14 -36,02 -46,99 -57,87 -68,96 -79,91 -90,92 -101,96 -112,98 -124,02 -135,10 -146,32 -157,55 -168,97 179,41 167,15 154,49 140,84 125,81 111,51 99,83 -11,75 -13,13 -14,05 -14,93 -16,15 -15,59 -15,88 -15,86 -15,73 -15,62 -15,45 -15,32 -15,18 -15,15 -14,94 -14,56 -14,48 -14,67 -14,80 -14,99 -15,32 -15,48 -15,87 -15,80 -15,65 -15,16 -14,47 -13,71 -12,85 -12,09 -11,44 -11,06 -11,02 -11,28 -12,47 -16,01 -32,15 -16,15 -11,25 175,50 134,72 103,57 77,53 60,98 48,79 36,69 24,61 15,78 6,63 -1,24 -9,98 -16,89 -23,44 -30,10 -35,12 -41,40 -46,03 -51,30 -53,99 -57,64 -58,42 -59,30 -58,07 -56,60 -55,31 -55,03 -56,11 -58,60 -63,04 -69,64 -77,10 -85,48 -95,81 -109,17 -125,94 -109,28 -15,25 -34,96 DSCHA30235263 - 20 sep 05 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 1-18GHz Wide Band Amplifier CHA3023 Chip Typical Response (On wafer measurements) : Tamb = +25°C Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA Typical on wafer S parameters Typical on wafer Noise Figure Pout vs Frequency (Pin=4dBm) DSCHA30235263 - 20 sep 05 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 1-18 GHz Wide Band Amplifier CHA3023 Chip Typical Response (Test Jig measurements) : Tamb = +25°C Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA Power compression @ 1GHz Power compression @ 12GHz Power compression @ 18GHz DSCHA30235263 - 20 sep 05 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 1-18GHz Wide Band Amplifier CHA3023 P1dB vs Frequency Noise Figure vs Frequency Gain & Return Loss vs Frequency DSCHA30235263 - 20 sep 05 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 1-18 GHz Wide Band Amplifier CHA3023 Chip Assembly and Mechanical Data Special care should be taken concerning the biasing procedure. Apply Vg before Vd. Equivalent wire bonding : 0.15 nH Equivalent wire bonding : 0.15 nH The CHA3023 could be used without Vg2 bias. There is a resistor bridge inside the chip. This one generates the correct value of Vg2 Bias. Pads G2a and G2 must be connected. Equivalent RF Wire Bondings: 0.15 nH (typical length of 200µm for a 25µm diameter wire). Equivalent wire bonding : 0.15 nH DSCHA30235263 - 20 sep 05 Equivalent wire bonding : 0.15 nH 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 1-18GHz Wide Band Amplifier CHA3023 Bonding pad positions Chip Thickness: 100um Chipsize: 2150X1420±35 µm Ordering Information Die form : CHA3023-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. DSCHA30235263 - 20 sep 05 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice