<z$E.ml-Concluctoi ZPioauch, One..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
... designed for low power amplifier and low current, high speed switchii
applications.
FEATURES:
* Collector-Emitter Sustaining VoHage40 V (Min) - MJE170.MJE180
= 60 V (Min) - MJE171.MJE181
= 80 V (Min) - MJE172.MJE182
* DC Current GainhFE=30(Min)© IC = 0.5A
=12(Min)ei c »1.5A
PNP
MJE170
MJE171
MJE172
3.0 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40-80 Volts
12.5 Watts
MAXIMUM RATINGS
Characteristic
Symbol MJE17C MJE171 MJE172
MJE180
MJE181
MJE182
Unit
Collector-Emitter Voltage
VCEO
40
60
80
V
Collector-Base Voltage
VCBO
60
80
100
V
Emitter-Base Voltage
VEBO
7.0
V
Ic
3.0
6.0
A
Collector Current - Continuous
-Peak
TO-220
B
Base Current
'B
1.0
A
Total Power Dissipation@Tc = 25°C
Derate above 25°C
PD
12.5
0.10
W
W/°C
Operating and Storage Junction
Temperature Range
-65 to +150
Max
Unit
R9jc
10
°C/W
PIN 1.BASE
2 COLLECTOR
3.EMnTER
4,COLLECTOR(CASe)
DIM
FIGURE -1 POWER DERATING
A
B
C
D
E
F
G
H
I
J
K
25
50
j
I—i^o
Hr
_
r[,4.
nJ
Symbol
Thermal Resistance Junction to Case
.
°c
TJ 'TSTO
THERMAL CHARACTERISTICS
Characteristic
NPN
MJE180
MJE181
MJE182
75
100
Tc , TEMPERATURE('C)
125
150
L
M
0
MILLIMETERS
MIN
MAX
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
15.31
10.42
6.S2
14.62
4.07
3.66
1.36
0.96
4,98
1.38
2,97
0.55
2.98
3,90
033
2.48
370
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJE170, MJE171, MJE172 PNP / MJE180, MJE181, MJE182 NPN
ELECTRICAL CHARACTERISTICS ( Tc » 25°C unless otherwise noted )
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
(lc = 10mA,lB = 0)
Collector Cutoff Current
(Vci = 60V, l, = 0)
(Vci = 80V, le = 0)
(V CK =100V, l. = 0)
( Ves = 60 V, ls = 0, Tc= 1 50"C )
( VCB = 80 V, IB = 0, Tc = 150°C )
( VCI = 1 00 V, IB = 0, Tc = 1 50°C )
MJE170.MJE180
MJE171.MJE181
MJE172.MJE182
MJE170.MJE180
MJE171.MJE181
MJE172.MJE182
MJE1 70.MJE1 80
MJE171.MJE181
MJE1 72.MJE1 82
Emitter Cutoff Current
( VEB = 7.0 V , lc = 0 )
Versus,
V
40
60
80
uA
'CBO
10
10
10
100
100
100
uA
IIBO
10
ON CHARACTERISTICS (1)
hFE
DC Current Gain
( lc = 100 mA,VCI= 1.0V)
( lc = 500 mA,VCI* 1.0V)
(IC = 1.5A,V CE *1.0V)
50
30
12
Collector-Emitter Saturation Voltage
( lc = 500 mA, IB = 50 mA )
(l c =1.5A,l B = 150mA)
(lc = 3.0A,lB = 600mA)
V«M
Base-Emitter Saturation Voltage
(l c - 1.5 A. IB" 150m A)
( lc = 3.0 A, IB = 600 m A )
VM
Base-Emitter On Voltage
( lc = 500 mA,VC6= 1.0V)
250
V
0.3
0.9
1.7
V
1.5
2.0
V
V8E(on)
1.2
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
( l c = 100 mA, VCE = 10 V, f = 10 MHz)
Output Capacitance
( VCB = 10 V, IE = 0, f = 0.1 MHz )
fT
MJE1707MJE172
MJE180/MJE182
(1) Pulse Test Pulse width = 300 us , Duty Cycle £ 2.0%
(2)f T = K.I -f^.
Cob
MHz
50
PF
60
50