CEL NE25139 General purpose dual-gate gaas mesfet Datasheet

GENERAL PURPOSE
DUAL-GATE GaAS MESFET
FEATURES
NE25139
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
GPS
10
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
Power Gain, GPS (dB)
20
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
10
f = 900 MHz
5
Noise Figure, NF (dB)
• LOW CRSS: 0.02 pF (TYP)
NF
0
0
0
DESCRIPTION
5
10
Drain to Source Voltage, VDS (V)
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
PARAMETERS AND CONDITIONS
NE25139
39
UNITS
MIN
NF
Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
dB
GPS
Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
dB
16
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, ID = 10 µA
V
13
mA
5
BVDSX
IDSS
Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V
TYP
MAX
1.1
2.5
20
20
40
VG1S (OFF)
Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA
V
-3.5
VG2S (OFF)
Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA
V
-3.5
IG1SS
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0
µA
10
IG2SS
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
µA
10
|YFS|
Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1.0 kHz
mS
18
25
35
CISS
Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
pF
0.5
1.0
1.5
CRSS
Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 MHz
pF
0.02
0.03
California Eastern Laboratories
NE25139
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
TYPICAL NOISE PARAMETERS (TA = 25°C)
(VDS = 5 V, VG2S = 0 V, IDS = 10 mA)
SYMBOLS
PARAMETERS
UNITS
RATINGS
FREQ.
NFOPT
GA
VDS
Drain to Source Voltage
V
13
(GHz)
(dB)
(dB)
MAG
-4.5
0.5
0.9
18.5
0.9
18
1.9
0.9
1.2
16.0
0.82
28
1.2
1.5
1.5
14.6
0.71
45
0.9
Gate 1 to Source Voltage
VG1S
V
Gate 2 to Source Voltage
VG2S
ID
Drain Current
PT
Total Power Dissipation
TCH
TSTG
V
-4.5
ΓOPT
ANG
Rn/50
mA
IDSS
2.0
1.9
12.5
0.55
75
0.67
mW
200
3.0
2.5
11.0
0.34
116
0.5
Channel Temperature
°C
125
4.0
3.3
9.5
0.25
154
0.4
Storage Temperature
°C
-55 to +125
Note:
1. Operation in excess of anyone of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
30
VDS = 5V
200
Drain Current, ID (mA)
Total Power Dissipation, PT (mW)
250
FREE AIR
150
100
50
0.5 V
10
0V
-0.5 V
0
0
0
25
50
75
100
125
-2.0
-1.0
0
+1.0
Ambient Temperature, TA (°C)
Gate 1 to Source Voltage, VG1S (V)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
Forward Transfer Admittance, |YFS| (mS)
Forward Transfer Admittance, |YFS| (mS)
VG2S = 1.0V
20
VDS = 5V
f = 1kHz
20
VG2S = 1.0
10
0.5 V
-0.5 V
0V
0
-2.0
-1.0
0
Gate 1 to Source Voltage, VG1S (V)
+1.0
30
VDS = 5 V
f = 1 kHz
VG2S = 1.0 V
20
10
VG2S = 0.5 V
0
0
10
20
Drain Current, ID (mA)
30
NE25139
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE vs.
GATE 2 TO SOURCE VOLTAGE
2.0
10
30
1
VDS = 5 V
VG2S = 1 V
ID = 10 mA
f = 900 MHz
VG2S = 1 V at ID = 10 mA 1
1.0
1
VG2S = 1 V at ID = 5 mA
GPS
0
5
-15
NF
-30
-45
0
-1.0
+1.0
-2.0
-1.0
0
+1.0
+2.0
Gate 2 to Source Voltage, VG2S (V)
Gate 2 to Source Voltage, VG2S (V)
Note:
1. Initial bias conditions. VG1S set to obtain
specified drain current.
Note:
1. Initial bias conditions. VG1S set to obtain
specified drain current.
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
10
25
VDS = 5 V
VG2S = 1 V
f = 900 MHz
GPS
15
5
10
5
NF
0
0
0
5
Drain Current, ID (mA)
10
Noise Figure, NF (dB)
20
Power Gain, GP (dB)
0
-3.0
Noise Figure, NF (dB)
15
Power Gain, GP (dB)
Input Capacitance, CISS (pF)
VDS = 5 V
f = 1kHz
NE25139
NONLINEAR MODEL
UNITS FOR MODEL PARAMETERS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
FET NONLINEAR MODEL PARAMETERS(1)
Parameters
UGW
FET1
100e-6
FET2
Parameters
100e-6
IDSOC
FET1
FET2
0.07
0.07
NGF
4
4
RDB
1.0e9
1.0e9
IS
8.78e-10
8.78e-10
CBS
0.16e-12
0.16e-12
N
1.33
1.33
GDBM
0.005
0.005
RG
0
0
KDB
11.1
11.1
RD
0
0
VDSM
7.1e-11
7.1e-11
RS
0
0
GMMAXAC
0.0475
0.0875
RIS
0
0
GAMMAAC
0.0107
0.0051
0.0052
RID
0
0
KAPAAC
0.0001
TAU
5.17e-12
5.17e-12
PEFFAC
44.9
44.9
CDSO
1.19e-13
1.19e-13
VTOAC
-1.584
-1.545
C11O
6.1e-13
6.1e-13
VTSOAC
-100
-100
C11TH
1.6e-13
1.6e-13
VDELTAC
0.062
0.062
VINFL
-1.1
-1.1
GMMAX
0.0554
0.0304
DELTGS
1.82
1.82
GAMMA
0.006
0.005
DELTDS
0.682
0.682
KAPA
0.046
0.0005
LAMBDA
\0.036
0.036
PEFF
1.636
1.636
C11DELT
0
0
VTO
-1.57
-1.5
C12O
0
0
VTSO
-100
-10
C12SAT
6.81e-14
6.81e-14
VDELT
0.135
0.1
CGDSAT
6.81e-14
6.81e-14
VCH
1
1
KBK
0.03
0.03
VSAT
1.119
1.119
VBR
6.5
6.5
VGO
-0.654
-0.0035
NBR
2
2
VDSO
3
10
(1) Libra EEFET3 Model
NE25139
NONLINEAR MODEL
SCHEMATIC
PORT
Pdrain
port = 2
RES
Rd
R = 4.58
CAP
Cg2d
C = 0.15
PORT
P1
port = 3
IND
Lg2
L = 0.40
RES
Rg2
R = 1.44
CAP
C12
C = 0.32
CAP
Cg1d
C = 5.64e-03
PORT
Pgate1
port = 1
IND
Lg1
L = 1.65
RES
Rg1
R = 1.52
CAP
Cg1s
C = 0.41
EEFET3
FET2
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
RES
R12
R = 1.13
EEFET3
FET1
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
RES
RDS
R = 711
CAP
CDS
C = 7.60e-02
RES
Rs
R = 5.79
CAP
Cg2s
C = 0.39
IND
Ls
L = 1.78
UNITS
Parameter
capacitance
inductance
resistance
Units
picofarads
nanohenries
ohms
NOTES:
1. This UGW value scales the model parameters on page 1.
2. This N value is the number of gate fingers and scales the
model parameters on page 1.
PORT
P4
port = 4
MODEL RANGE
Frequency: 0.1 to 4 GHz
Bias:
VDS = 5 V, Vg1s= -0.785 V, Vg2s= 0 V, ID = 10 mA
NE25139
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
+90˚
j50
+60˚
+120˚
j100
j150
+30˚
+150˚
j10
j250
0
10
25
10
S22
100 150 250 .1 GHz
50
S11
4 GHz
-j10
S12
4 GHz
S21
.1 GHz
S12
.1 GHz
1.0
-j250
S22
4 GHz
-j150
-j100
-j25
+180
˚
–
S11
.1 GHz
Coordinates in Ohms
Frequency in GHz
(VDS = 5 V, VG2S = 0 V, IDS = 10 mA)
.5 .10 .15
.20
1.5
-150˚
.25 0˚
-30˚
2.0
S21 2.5
-120˚
-60˚
-90˚
-j50
NE25139
VDS = 5 V, VG2S = 0 V, IDS = 10 mA
FREQUENCY
(GHz)
S11
S21
MAG
0.1
0.2
0.4
0.6
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1.0
1.0
0.99
0.97
0.94
0.92
0.82
0.69
0.60
0.51
0.51
0.63
ANG
-4
-8
-15
-23
-35
-39
-61
-86
-110
-131
-147
-167
S12
MAG
ANG
1.96
1.92
1.91
1.90
1.90
1.90
1.88
1.52
1.41
1.39
1.37
1.20
174
169
158
148
132
126
99
71
45
19
-6
-47
MAG
0.001
0.001
0.001
0.002
0.004
0.004
0.006
0.008
0.012
0.023
0.039
0.042
S22
ANG
87
85
82
81
80
79
78
95
118
153
162
157
MAG
0.96
0.96
0.95
0.94
0.94
0.94
0.94
0.95
0.96
0.97
0.97
0.96
K
ANG
-1
-2
-3
-3
-4
-5
-6
-9
-12
-18
-27
-42
0.47
0.51
0.70
1.14
1.18
1.49
2.03
2.21
1.34
0.32
0.04
0.07
S21
MAG1
(dB)
(dB)
5.8
5.7
5.6
5.6
5.6
5.6
5.5
3.6
3.0
2.9
2.1
1.6
32.9
32.8
32.8
27.5
24.2
22.6
19.2
16.6
17.2
17.8
15.1
14.6
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE25139
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
+90˚
j50
j25
+60˚
+120˚
j100
S21
1.2 GHz
j150
+30˚
+150˚
j10
j250
0
10
25
S22
100 150 250 .1 GHz
50
S22
4 GHz
-j10
.5 .10 .15
.20
.25 0˚
1.0
-j250
S11
4 GHz
Coordinates in Ohms
Frequency in GHz
(VDS = 5 V, VG2S = 1 V, ID = 10 mA)
-j150
-j100
-j25
+180
˚
–
S11
.1 GHz
1.5
-150˚
-30˚
2.0
-120˚
S21 2.5
-60˚
-90˚
-j50
NE25139
VDS = 5 V, VG2S = 1 V, ID = 10 mA
FREQUENCY
S11
(GHz)
MAG
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
.99
.99
.99
.98
.97
.97
.96
.95
.94
.92
.91
.88
S21
S12
S22
ANG
MAG
ANG
MAG
ANG
-3
-7
-9
-13
-16
-19
-22
-25
-29
-29
-35
-35
2.36
2.39
2.31
2.23
2.42
2.30
2.33
2.23
2.45
2.30
2.35
2.37
177
169
164
160
158
150
146
142
137
131
126
124
.001
.001
.002
.002
.003
.003
.004
.005
.005
.006
.006
.006
87
85
82
82
81
81
80
79
79
78
78
78
MAG
.97
.98
.98
.97
.99
.96
.99
.96
.99
.97
.98
.99
K
S21
(dB)
MAG1
(dB)
0.47
0.51
0.70
1.14
1.18
1.49
2.03
2.21
1.34
0.32
0.04
0.07
5.83
5.7
5.6
5.6
5.6
5.6
5.5
3.6
3.0
2.9
2.1
1.6
2.9
32.8
32.8
27.5
24.2
22.6
19.2
16.6
17.2
17.8
15.1
14.6
ANG
-1
-3
-3
-6
-6
-8
-9
-9
-13
-11
-15
-13
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
(SOT-143)
+0.2
2.8 -0.3
+0.2
1.5 -0.1
2
2.9 ± 0.2 0.95
ORDERING INFORMATION
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
3
1.9
0.85
4
1
PIN
CONNECTIONS
1. Source
2. Drain
3. Gate 2 1.1+0.2
-0.1
4. Gate 1
+0.10
0.6 -0.05
0.8
0.16 +0.10
-0.06
PART
NUMBER
AVAILABILITY
IDSS RANGE
(mA)
NE25139
NE25139-T1
NE25139U71
NE25139T1U71
NE25139U72
NE25139T1U72
NE25139U73
NE25139T1U73
NE25139U74
NE25139T1U74
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
5 - 40
5 - 40
5 - 15
5 - 15
10 - 25
10 - 25
20 - 35
20 - 35
30 - 40
30 - 40
MARKING
U71
U71
U72
U72
U73
U73
U74
U74
5˚
5˚
0 to 0.1
Note: All dimensions are typical unless otherwise specified.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
8/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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