M30L40C www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 PIN 1 PIN 2 PIN 3 CASE TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2 x 15 A VRRM 40 V EAS 20 mJ IFSM 280 A VF at IF = 15 A 0.413 V TJ max. 150 °C Package TO-220AB Diode variations Common cathode Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.1) total device per diode SYMBOL M30L40C UNIT VRRM 40 V IF(AV) 30 15 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 280 Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz IRRM 1.0 A Non-repetitive avalanche energy at 25 °C, IAS = 2 A, L = 10 mH per diode EAS 20 mJ dV/dt 10 000 V/μs TJ, TSTG -65 to +150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range A Revision: 15-Aug-15 Document Number: 89012 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 M30L40C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS IF = 8 A TJ = 25 °C IF = 15 A VF (1) Instantaneous forward voltage per diode Typical junction capacitance per diode CJ - 0.490 0.55 0.595 - IF = 8 A 0.331 - 0.413 0.48 TJ = 125 °C IF = 30 A IR (2) MAX. IF = 30 A IF = 15 A Reverse current per diode TYP. 0.430 VR = 40 V UNIT V 0.572 - TJ = 25 °C 88 360 μA TJ = 100 °C 12 45 mA 750 - pF 4.0 V, 1 MHz Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL M30L40C UNIT RJC 2.0 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE M30L40C-E3/4W 2.068 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 9 35 D = 0.3 8 30 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 25 20 15 10 5 D = 0.2 7 D = 0.8 D = 0.5 D = 0.1 D = 1.0 6 5 4 T 3 2 D = tp/T 1 0 tp 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 15-Aug-15 Document Number: 89012 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 M30L40C www.vishay.com Vishay General Semiconductor 10 000 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 125 °C TJ = 100 °C 10 TJ = 25 °C 1 1000 100 0.1 0 0.2 0.4 0.6 0.8 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 1000 TJ = 150 °C 100 TJ = 125 °C TJ = 100 °C 10 1 0.1 TJ = 25 °C 20 30 40 50 60 70 80 90 1 0.1 0.01 0.01 10 Junction to Case 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 15-Aug-15 Document Number: 89012 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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