Diodes DMS2120LFWB-7 P-channel enhancement mode mosfet with integrated sbr Datasheet

DMS2120LFWB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR
NEW PRODUCT
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Features
Mechanical Data
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Low On-Resistance
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95mΩ @VGS = -4.5V
•
120mΩ @VGS = -2.5V
•
150mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low VF Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: DFN3020B-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.011 grams (approximate)
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S
DFN3020B-8
K
G
D
Top View
Bottom View
Maximum Ratings – TOTAL DEVICE
Symbol
PD
RθJA
TJ, TSTG
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
A
D
S
D
G
Bottom View
Pin Configuration
Value
1.5
85
-55 to +150
Unit
W
°C/W
°C
@TA = 25°C unless otherwise specified
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-2.9
-10
Units
V
V
A
A
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
Value
Unit
40
V
28
1
V
A
IFSM
3
A
@TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
1.
2.
3.
4.
K
@TA = 25°C unless otherwise specified
Maximum Ratings – P-CHANNEL MOSFET – Q1
Notes:
A
A
Equivalent Circuit
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Maximum Ratings – SBR – D1
K
Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Repetitive rating, pulse width limited by junction temperature.
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
1 of 7
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April 2009
© Diodes Incorporated
DMS2120LFWB
Electrical Characteristics – P-CHANNEL MOSFET – Q1
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
±100
±800
V
μA
-0.45
⎯
-1.3
V
70
84
100
95
120
150
mΩ
|Yfs|
VSD
⎯
⎯
⎯
⎯
⎯
8
0.42
⎯
-1.2
S
V
Ciss
Coss
Crss
⎯
⎯
⎯
632
65
54
⎯
⎯
⎯
pF
pF
pF
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Electrical Characteristics – SBR – D1
Symbol
V(BR)R
Forward Voltage
VF
Reverse Current (Note 5)
IR
Notes:
nA
Test Condition
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
VDS = -5V, ID = -2.8A
VGS = 0V, IS = -1.0A
VDS = -10V, VGS = 0V
f = 1.0MHz
@ TA = 25ºC unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Min
40
⎯
Typ
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.42
0.49
30
⎯
Unit
V
V
μA
Test Condition
IR = 1mA
IF = 0.5A
IF = 1.0A
VR = 20V
5. Short duration pulse test used to minimize self-heating effect.
Q1, P-CHANNEL MOSFET
10
10
VGS = -8.0V
VDS = -5V
VGS = -4.5V
8
8
VGS = -2.5V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@TA = 25°C unless otherwise specified
VGS = -2.0V
6
VGS = -1.5V
4
6
4
TA = 150°C
2
2
VGS = -1.0V
0
0
TA = -55°C
0
0.5
5
1
1.5
-VGS, GATE SOURCE VOLTAGE (V)
2
Fig. 2 Typical Transfer Characteristics
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
TA = 85°C
TA = 25°C
VGS = -1.2V
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
TA = 125°C
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April 2009
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DMS2120LFWB
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.12
0.1
0.08
VGS = -1.8V
0.06
VGS = -2.5V
VGS = -4.5V
0.04
0.02
0
0
1
2
3
4
5
6
7
-ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.12
0.1
VGS = -2.5V
ID = -2A
VGS = -4.5V
ID = -5A
1.0
0.8
0.6
-50
TA = 150°C
TA = 125°C
0.08
TA = 85°C
0.06
TA = 25°C
0.04
TA = -55°C
0.02
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
1.2
0.14
8
1.6
1
2
3
4
5
6
7
-ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
8
0.11
0.09
VGS = -2.5V
ID = -2A
0.07
VGS = -4.5V
ID = -5A
0.05
0.03
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
10,000
1
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
f = 1MHz
C, CAPACITANCE (pF)
NEW PRODUCT
Q1, P-CHANNEL MOSFET - Continued
0.14
1,000
Ciss
100
Coss
Crss
10
0
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Capacitance
20
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
3 of 7
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0.9
0.8
0.7
0.6
ID = -1mA
0.5
ID = -250µA
0.4
0.3
0.2
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
April 2009
© Diodes Incorporated
DMS2120LFWB
Q1, P-CHANNEL MOSFET - Continued
-IS, SOURCE CURRENT (A)
8
6
TA = 25°C
4
2
0
0
0.2 0.4 0.6 0.8
1
1.2
1.4 1.6
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
D1, SBR
IF, INSTANTANEOUS FORWARD CURRENT (A)
0.7
0.6
PD, POWER DISSIPATION (W)
NEW PRODUCT
10
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 10 Forward Power Dissipation
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
1
TA = 150°C
0.1
0.01
TA = 125°C
TA = 85°C
TA = 25°C
0.001
0.0001
0
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TA = -55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 11 Typical Forward Characteristics
April 2009
© Diodes Incorporated
DMS2120LFWB
D1, SBR - Continued
10,000
T A = 125°C
1,000
C, CAPACITANCE (pF)
IR, INSTANTANEOUS REVERSE CURRENT(uA)
TA = 150°C
1,000
100
TA = 85°C
10
TA = 25°C
1
0.01
0
100
10
1
0.1
5
10
15
20
25
30
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 12 Typical Reverse Characteristics
1
10
100
VR, DC REVERSE VOLTAGE (V)
Fig. 13 Total Capacitance vs. Reverse Voltage
TA, DERATED AMBIENT TEMPERATURE (°C)
150
1.4
1.2
Note 2
1.0
0.8
0.6
0.4
0.2
0
25
125
100
75
50
25
0
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 14 Forward Current Derating Curve
Ordering Information
0
175
10
20
30
VR, DC REVERSE VOLTAGE (V)
Fig. 15 Operating Temperature Derating
40
(Note 6)
Part Number
DMS2120LFWB-7
Notes:
f = 1MHz
0.1
1.6
IF(AV), AVERAGE FORWARD CURRENT (A)
NEW PRODUCT
10,000
Case
DFN3020B-8
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MF = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
MF YM
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
Mar
3
2010
X
Apr
4
2011
Y
May
5
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
Jun
6
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2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
April 2009
© Diodes Incorporated
DMS2120LFWB
Package Outline Dimensions
A
DFN3020B-8
Dim Min Max Typ
A
0.77 0.83 0.80
A1
0
0.05 0.02
A3
0.15
b
0.25 0.35 0.30
D
2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e
0.65
E
1.95 2.075 2.00
E2 0.43 0.63 0.53
L
0.25 0.35 0.30
Z
0.375
All Dimensions in mm
A3
NEW PRODUCT
A1
D
D4
D4
D2
E
E2
b
Z
e
L
Suggested Pad Layout
C
X1
Dimensions
a
b
C
G
X1
X2
Y1
Y2
Y1
a
G
b
Y2
X2
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
6 of 7
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Value (in mm)
0.09
0.365
0.65
0.285
0.4
1.12
0.5
0.73
April 2009
© Diodes Incorporated
DMS2120LFWB
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
7 of 7
www.diodes.com
April 2009
© Diodes Incorporated
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