ON Semiconductor NPN MJD122* Complementary Darlington Power Transistors PNP MJD127* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATTS • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122 Series, and TIP125–TIP127 Series Monolithic Construction With Built–in Base–Emitter Shunt Resistors High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc Complementary Pairs Simplifies Designs CASE 369A–13 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous Peak IC 8 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.16 Watts W/C Total Power Dissipation* @ TA = 25C Derate above 25C PD 1.75 0.014 Watts W/C TJ, Tstg –65 to +150 C Collector–Emitter Voltage Operating and Storage Junction Temperature Range CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.165 4.191 MJD122 MJD127 0.190 4.826 Symbol Rating Max Unit RθJC 6.25 C/W Thermal Resistance, Junction to Ambient* RθJA 71.4 C/W 0.118 3.0 Characteristic 0.243 6.172 0.063 1.6 Symbol Thermal Resistance, Junction to Case 0.100 2.54 THERMAL CHARACTERISTICS inches mm Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2001 – Rev. 5 1 Publication Order Number: MJD122/D MJD122 MJD127 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO — 10 µAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO — 10 µAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO — 2 mAdc 1000 100 12,000 — — — 2 4 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (1) (IC = 8 Adc, IB = 80 mAdc) VBE(sat) — 4.5 Vdc Base–Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) VBE(on) — 2.8 Vdc |hfe| 4 — MHz — — 300 200 300 — DYNAMIC CHARACTERISTICS Current–Gain–Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob pF MJD127 MJD122 Small–Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) hfe (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 — MJD122 MJD127 TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 NPN MJD122 20,000 3000 2000 1000 700 500 300 200 0.1 TJ = 150°C 25°C -55°C 0.2 0.3 0.5 0.7 1 2 3 5 VCE = 4 V 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 20,000 VCE = 4 V 7 5000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 300 200 0.1 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 IB, BASE CURRENT (mA) 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 3 3 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2 1.5 1 0.5 0.1 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 0.5 0.7 1.5 1 VCE(sat) @ IC/IB = 250 0.2 0.3 2 1 2 3 5 7 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V VCE(sat) @ IC/IB = 250 0.5 0.1 10 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) Figure 4. “On” Voltages http://onsemi.com 3 5 7 10 MJD122 MJD127 TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD122 +5 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) PNP MJD127 *IC/IB ≤ hFE/3 +4 +3 +2 +1 0 25°C to 150°C -1 θVC for VCE(sat) -2 -3 -55°C to 25°C 25°C to 150°C θVB for VBE -4 -5 0.1 -55°C to 25°C 1 2 3 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMP) 5 7 10 +5 +4 *IC/IB ≤ hFE/3 +3 25°C to 150°C +2 -55°C to 25°C +1 0 *θVC for VCE(sat) -1 -2 -3 -4 25°C to 150°C θVB for VBE -5 0.1 -55°C to 25°C 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 5. Temperature Coefficients 105 REVERSE 104 FORWARD IC, COLLECTOR CURRENT (A) µ IC, COLLECTOR CURRENT (A) µ 105 VCE = 30 V 103 102 TJ = 150°C 101 100°C 100 25°C 10-1 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) 104 REVERSE VCE = 30 V 103 102 FORWARD TJ = 150°C 101 100 100°C 25°C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE-EMITTER VOLTAGE (VOLTS) -1.2 -1.4 +1.2 +1.4 Figure 6. Collector Cut–Off Region 300 5000 3000 2000 200 TJ = 25°C C, CAPACITANCE (pF) hfe , SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 2 5 100 70 Cib 50 PNP NPN 1 Cob 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 30 0.1 PNP NPN 0.2 0.5 1 2 5 10 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Figure 7. Small–Signal Current Gain http://onsemi.com 4 20 50 100 MJD122 MJD127 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC -30 V t, TIME (s) µ RC SCOPE TUT V2 APPROX +8 V 0 V1 APPROX -12 V 3 2 RB 51 ≈ 8 k ≈ 120 D1 +4V 25 µs tf 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf ≤ 10 ns DUTY CYCLE = 1% PNP NPN ts 0.2 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Switching Times Test Circuit 1 0.7 0.5 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C td @ VBE(off) = 0 V 0.3 0.5 0.7 1 3 2 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 10. Switching Times D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.03 SINGLE PULSE RθJC(t) = r(t) RθJC RθJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) θJC(t) 0.01 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (AMP) Figure 11. Thermal Response 20 15 10 500µ s 5 3 2 0.5 0.3 0.2 100µ s 5ms BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.03 0.02 1ms TJ = 150°C 1 1 2 3 5 7 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 20 dc 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating rea http://onsemi.com 5 MJD122 MJD127 COLLECTOR PNP COLLECTOR NPN BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 MJD122 MJD127 PACKAGE DIMENSIONS DPAK CASE 369A–13 ISSUE AA –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M T http://onsemi.com 7 DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 --- MJD122 MJD127 PACKAGE DIMENSIONS DPAK CASE 369–07 ISSUE M C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 DIM A B C D E F G H J K R S V A 1 2 3 S –T– SEATING PLANE K J F H D G INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 3 PL 0.13 (0.005) M T ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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