ZP CJMPD08 P-channel power mosfet Datasheet

CJMPD08
DFNWB2*2-6L-A Plastic-Encapsulate MOSFETS
CJMPD08 P-Channel Power MOSFET
DFNWB2*2-6L-A
General Description
The CJMPD08 uses advanced trench technology and design to
Provide excellent RDS(on) with low gate charge. This device is suitable for use
in DC-DC conversion applications.
FEATURE
z Low Profile for Easy Fit in Thin Environments
z Bidirectional Current Folw with Common Source Configuration
APPLICATIONS
z Optimized for Battery and Load Management Applications in Portable Equipment
z Li-Ion Battery Charging and Protection Circuits
z High Power Management in Portable , Battery Powered Products
z High Side Load Switch
MARKING:
front
Tape Drawing (Unit : mm)
back
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current(Note1a)
ID
-3.6
A
Power Dissipation (Note1a)
PD
1.4
W
Power Dissipation (Note1b)
PD
0.7
W
RθJA
86
℃/W
V
Thermal Resistance from Junction to Ambient (Note1a)
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CJMPD08
Thermal Resistance from Junction to Ambient (Note1b)
RθJA
173
℃/W
Thermal Resistance from Junction to Ambient (Note1c)
RθJA
69
℃/W
Thermal Resistance from Junction to Ambient(Note1d)
RθJA
151
℃/W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 ~+150
℃
Notes:1. RθJA is determined with the device mounted on a 1.5 x 1.5 in. PCB of FR-4 material.
(a) when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) when mounted on a minimum pad of 2 oz copper. For single operation.
(c) when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation.
(d) when mounted on a minimum pad of 2 oz copper. For dual operation.
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
On/Off Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =-250µA
-20
VGS(th)
VDS =VGS, ID =-250µA
-0.4
Gate-threshold voltage
-1
V
Gate-body leakage current
IGSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS =-16V, VGS =0V
-1
µA
VGS =-4.5V, ID =-3.6A
60
VGS =-2.5V, ID =-3A
80
VGS =-1.8V, ID =-2A
110
VGS =-1.5V, ID =-1A
170
Drain-source on-state resistance (Note 2)
RDS(on)
Forward transconductance (Note 2)
gFS
VDS =-10V, ID =-2.7A
5.5
mΩ
S
Charges , Capacitances and Gate resistance(Note3)
Input capacitance
Ciss
480
Output capacitance
Coss
Reverse transfer capacitance
Crss
10
Total gate charge
Qg
7.2
Gate-source charge
Qgs
Gate-drain charge
Qgd
1.2
td(on)
38
VDS =-15V,VGS =0V,f =1MHz
VDS =-4.5V,VGS =-6V,ID =-2.8A
pF
46
nC
2.2
Switching times (Note3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
tr
VDS=-6V,ID=-2.8A,
25
td(off)
VGS=-4.5V,RG=6Ω
43
tf
ns
5
Source-drain diode characteristics
Forward on voltage (Note2)
VSD
VGS =0V, IS=-1A
-0.8
V
Notes:
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
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CJMPD08
Transfer Characteristics
Output Characteristics
-5
5
VGS=-2.4V,-2.2V,-2V,-1.8V,-1.6V
o
Ta=25 C
Pulsed
4
(A)
(A)
-4
ID
ID
VGS=-1.4V
DRAIN CURRENT
DRAIN CURRENT
-3
-2
VGS=-1.2V
-1
3
2
1
VGS=-1.0V
-0
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
VDS
0
-4
0
1
2
GATE TO SOURCE VOLTAGE
(V)
RDS(ON) ——
ID
100
3
VGS
(V)
VGS
500
o
o
Ta=25 C
Pulsed
VGS=-1.8V
60
RDS(ON)
(mΩ)
80
VGS=-2.5V
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(mΩ)
Ta=25 C
Pulsed
VGS=-4.5V
40
20
0
400
300
200
ID=-2.1A
100
0
1
2
DRAIN CURRENT
3
ID
4
5
0
0
(A)
2
4
GATE TO SOURCE VOLTAGE
6
VGS
8
(V)
IS —— VSD
SOURCE CURRENT
IS (A)
5
1
o
Ta=25 C
Pulsed
0.1
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
1.2
VSD (V)
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