BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation Max Units *BSS64 350 2.8 357 mW mW/°C °C/W (continued) Electrical Characteristics Symbol BSS64 NPN General Purpose Amplifier TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 4.0 mA, IB = 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150°C VEB = 5.0 V, IC = 0 V 0.1 50 200 µA µA nA 0.15 0.2 1.2 V V V ON CHARACTERISTICS hFE DC Current Gain IC = 10 mA, VCE = 1.0 V VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 4.0 mA, IB = 400 µA IC = 50 mA, IB = 15 mA IC = 4.0 mA, IB = 400 µA 20 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cob Output Capacitance IC = 4.0 mA, VCE = 10, f = 35 MHz VCB = 10 V, f = 1.0 MHz 60 MHz 5.0 pF 3 Spice Model NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10) Typical Pulsed Current Gain vs Collector Current 250 125 °C 200 150 25 °C 100 - 40 °C 50 0 0.1 V C E = 5V 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 β = 10 0.3 25 °C 0.2 125 °C 0.1 0 - 40 °C 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 (continued) Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 V BEON - BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 °C 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( ° C) 125 Input and Output Capacitance vs Reverse Voltage 30 f = 1.0 MHz CAPACITANCE (pF) 25 20 15 C ib 10 5 0 0.1 C cb 1 10 V CE - COLLECTOR VOLTAGE (V) 100 VCE = 5V 0.2 0 0.1 BV CER - BREAKDOWN VOLTAGE (V) 10 h FE - SMALL SIGNAL CURRENT GAIN I CBO- COLLE CTOR CURRENT (nA) VCB = 100V 125 °C 0.4 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Collector-Cutoff Current vs. Ambient Temperature 50 25 °C 0.6 260 I C = 1.0 mA 240 220 200 180 160 0.1 1 10 100 1000 RESISTANCE (kΩ ) Small Signal Current Gain vs Collector Current 16 FREG = 20 MHz V CE = 10V 12 8 4 0 1 10 I C - COLLECTOR CURRENT (mA) 50 BSS64 NPN General Purpose Amplifier (continued) Typical Characteristics BSS64 NPN General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) 350 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G