Seme LAB D1218UK Metal gate rf silicon fet Datasheet

TetraFET
D1218UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
A
E
(2 pls)
C
1
K
2
3
4
G
F
8
7
6
5
J
Typ.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 12.5V – 500MHz
PUSH–PULL
D
M
Q
FEATURES
P
O
N
I
H
• SUITABLE FOR BROAD BAND APPLICATIONS
DD
PIN 1
PIN 3
PIN 5
PIN 7
SOURCE (COMMON)
DRAIN 2
SOURCE (COMMON)
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Q
mm
9.14
12.70
45°
6.86
0.76
9.78
19.05
4.19
3.17
1.52R
1.65R
16.51
22.86
0.13
6.35
10.77
• SIMPLIFIED AMPLIFIER DESIGN
PIN 2
PIN 4
PIN 6
PIN 8
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.64
0.13
DRAIN 1
SOURCE (COMMON)
GATE 2
SOURCE (COMMON)
Inches
0.360
0.500
45°
0.270
0.030
0.385
0.750
0.165
0.125
0.060R
0.065R
0.650
0.900
0.005
0.250
0.424
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.025
0.005
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
290W
40V
±20V
30A
–65 to 150°C
200°C
* Per Side
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 9/00
D1218UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
Drain–Source
V
VGS = 0
ID = 100mA
VDS = 12.5V
VGS = 0
3
mA
VGS = 20V
VDS = 0
1
mA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
5.5
V
gfs
VDS = 10V
ID = 3A
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
40
1
2.4
mhos
10
dB
50
%
20:1
—
TOTAL DEVICE
GPS
Common Source Power Gain
PO = 60W
Drain Efficiency
VDS = 12.5V
VSWR Load Mismatch Tolerance
f = 500MHz
h
IDQ = 4A
PER SIDE
Ciss
Input Capacitance
VDS = 0V
Coss
Output Capacitance
VDS = 12.5V VGS = 0
Crss
Reverse Transfer Capacitance
VDS = 12.5V VGS = 0
* Pulse Test:
180
pF
f = 1MHz
120
pF
f = 1MHz
12
pF
VGS = –5V f = 1MHz
Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Max. 0.6°C / W
Prelim. 9/00
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