TetraFET D1218UK METAL GATE RF SILICON FET MECHANICAL DATA B A E (2 pls) C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 12.5V – 500MHz PUSH–PULL D M Q FEATURES P O N I H • SUITABLE FOR BROAD BAND APPLICATIONS DD PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (COMMON) DRAIN 2 SOURCE (COMMON) GATE 1 DIM A B C D E F G H I J K M N O P Q mm 9.14 12.70 45° 6.86 0.76 9.78 19.05 4.19 3.17 1.52R 1.65R 16.51 22.86 0.13 6.35 10.77 • SIMPLIFIED AMPLIFIER DESIGN PIN 2 PIN 4 PIN 6 PIN 8 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.64 0.13 DRAIN 1 SOURCE (COMMON) GATE 2 SOURCE (COMMON) Inches 0.360 0.500 45° 0.270 0.030 0.385 0.750 0.165 0.125 0.060R 0.065R 0.650 0.900 0.005 0.250 0.424 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.025 0.005 • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current Storage Temperature Maximum Operating Junction Temperature 290W 40V ±20V 30A –65 to 150°C 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 9/00 D1218UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS Drain–Source V VGS = 0 ID = 100mA VDS = 12.5V VGS = 0 3 mA VGS = 20V VDS = 0 1 mA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 5.5 V gfs VDS = 10V ID = 3A IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* 40 1 2.4 mhos 10 dB 50 % 20:1 — TOTAL DEVICE GPS Common Source Power Gain PO = 60W Drain Efficiency VDS = 12.5V VSWR Load Mismatch Tolerance f = 500MHz h IDQ = 4A PER SIDE Ciss Input Capacitance VDS = 0V Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: 180 pF f = 1MHz 120 pF f = 1MHz 12 pF VGS = –5V f = 1MHz Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 0.6°C / W Prelim. 9/00