BD237G (NPN), BD234G,BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS • High DC Current Gain • Epoxy Meets UL 94 V0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD234G DB237G, BD238G VCEO Collector−Base Voltage BD234G DB237G, BD238G VCBO Emitter−Base Voltage VEBO 5.0 Vdc IC 2.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25_C PD Collector Current Vdc 45 80 Vdc 60 100 3 BASE 1 EMITTER 1 EMITTER W TO−225 CASE 77−09 STYLE 1 25 TJ, Tstg – 55 to + 150 _C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Operating and Storage Junction Temperature Range 3 BASE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 3 MARKING DIAGRAM YWW BD23xG THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 5.0 _C/W Y = Year WW = Work Week BD23x = Device Code x = 4, 7 or 8 G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 17 1 Publication Order Number: BD237/D BD237G (NPN), BD234G, BD238G (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) BD237G, BD238G BD234G Min Max V(BR)CEO Vdc 80 45 Collector Cutoff Current (VCB = 100 Vdc, IE = 0) BD237G, BD238G (VCB = 60 Vdc, IE = 0) BD234G ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) Unit − − mAdc − 0.1 − 0.1 − 1.0 40 25 − − 0.6 − 1.3 3.0 − mAdc − hFE1 hFE2 Collector−Emitter Saturation Voltage (Note 1) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) Base−Emitter On Voltage (Note 1) (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) − Vdc Vdc fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. IC, COLLECTOR CURRENT (AMP) 10 The Safe Operating Area Curves indicate IC−VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. 100 ms 1 ms 3 5 ms TJ = 150°C 1 dc 0.3 0.1 1 3 10 BD236 BD237 30 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area http://onsemi.com 2 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BD237G (NPN), BD234G, BD238G (PNP) 1.0 0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.6 TJ = 25°C 0.4 0.2 0 0.2 0.3 1.0 0.5 2.0 3.0 10 5.0 30 20 50 200 100 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 1.5 VCE = 2.0 V TJ = 25°C 300 200 TJ = + 150°C 100 70 50 TJ = + 25°C 30 20 TJ = - 55°C 10 2.0 3.0 5.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.2 VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1000 700 500 1.0 0.7 0.5 D = 0.5 0.3 D = 0.2 0.2 D = 0.1 0.1 0.07 0.05 D = 0.05 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE(sat) @ IC/IB = 10 10 20 30 50 100 200 300 500 1000 2000 0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Current Gain Figure 4. “On” Voltages SINGLE PULSE qJC(t) = r(t) qJC qJC = 4.16°C/W MAX qJC = 3.5°C/W TYP D = 0.01 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.03 0.02 0.01 0.01 0.9 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME or PULSE WIDTH (ms) Figure 5. Thermal Response http://onsemi.com 3 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 BD237G (NPN), BD234G, BD238G (PNP) ORDERING INFORMATION Package Shipping BD234G Device TO−225 (Pb−Free) 500 Units / Box BD237G TO−225 (Pb−Free) 500 Units / Box BD238G TO−225 (Pb−Free) 500 Units / Box http://onsemi.com 4 BD237G (NPN), BD234G, BD238G (PNP) PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BD237/D