Freescale Semiconductor Technical Data Document Number: MRF373A Rev. 7, 9/2008 NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power — 75 Watts Power Gain — 18.2 dB D Efficiency — 60% • Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal G Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. S • RoHS Compliant • In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel. 470 - 860 MHz, 75 W, 32 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 1 NI - 360 MRF373ALR1 CASE 360C - 05, STYLE 1 NI - 360S MRF373ALSR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +70 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc PD 197 1.12 278 1.59 W W/°C W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.89 0.63 °C/W Total Device Dissipation @ TC = 25°C Derate above 25°C MRF373ALR1 MRF373ALSR1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case MRF373ALR1 MRF373ALSR1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model Machine Model © Freescale Semiconductor, Inc., 2008. All rights reserved. Freescale Semiconductor RF Product Device Data 1 (Minimum) MRF373ALR1 MRF373ALSR1 NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistors M2 (Minimum) M1 (Minimum) MRF373ALR1 MRF373ALSR1 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 70 — — Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 V, ID = 200 μA) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.3 4.5 Vdc Drain- Source On - Voltage (VGS = 10 V, ID = 3 A) VDS(on) — 0.41 0.45 Vdc Input Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Ciss — 98.5 — pF Output Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Coss — 49 — pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Crss — 2 — pF Common Source Power Gain (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz) Gps 16.5 18.2 — dB Drain Efficiency (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz) η 56 60 — % NOT RECOMMENDED FOR NEW DESIGN Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID =1 μA) On Characteristics Dynamic Characteristics Functional Characteristics (50 ohm system) NOT RECOMMENDED FOR NEW DESIGN Off Characteristics MRF373ALR1 MRF373ALSR1 2 Freescale Semiconductor RF Product Device Data R3 C14 VDD C17 C13 C16 R1 RF INPUT C11 C15 C7 L1 C1 C10 C3 C2 C9 C8 C4 C5 RF OUTPUT C6 CUT OUT AREA NOT RECOMMENDED FOR NEW DESIGN R2 C12 MRF373A Rev 01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Table 5. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Designations and Values Designation Description C1, C2 18 pF Chip Capacitors C3 12 pF Chip Capacitor C4 1.8 pF Chip Capacitor C5, C10 51 pF Chip Capacitors C6 0.3 pF Chip Capacitor (Used only on the MRF373AS) C7 15 pF Chip Capacitor C8 10 pF Chip Capacitor C9 2.7 pF Chip Capacitor C11 0.5 pF Chip Capacitor C12 1000 pF Chip Capacitor C13 39 pF Chip Capacitor C14, C15 470 pF Chip Capacitors C16 2.2 mF, 100 V Chip Capacitor C17 10 mF, 35 V Tantalum Capacitor L1A 12 nH, Coilcraft R1, R2 390 Ω, 1/2 W Chip Resistors (2010) R3 1 kΩ, 1/2 W Chip Resistor (2010) PCB Arlon GX - 0300- 55, 30 mils, εr = 2.55 NOT RECOMMENDED FOR NEW DESIGN VGG MRF373ALR1 MRF373ALSR1 Freescale Semiconductor RF Product Device Data 3 TYPICAL CHARACTERISTICS 20 400 mA 300 mA 18 200 mA 17 100 mA 16 15 10 1 100 Pout, OUTPUT POWER (WATTS) CW Figure 2. Power Gain versus Output Power 62 VDD = 32 Vdc Pout = 75 W (CW) IDQ = 200 mA 25 η 60 IRL 20 58 Gps 15 56 10 54 5 800 820 840 860 880 900 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) 30 52 920 f, FREQUENCY (MHz) 200 20 150 15 100 Ciss 10 50 Coss 5 Crss 0 0 10 20 30 40 50 C rss , CAPACITANCE (pF) C oss , C iss , CAPACITANCE (pF) Figure 3. Performance in Narrowband Circuit NOT RECOMMENDED FOR NEW DESIGN G ps , POWER GAIN (dB) 19 NOT RECOMMENDED FOR NEW DESIGN VDD = 32 Vdc f = 860 MHz IDQ = 500 mA 0 60 VDS, DRAIN SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Voltage MRF373ALR1 MRF373ALSR1 4 Freescale Semiconductor RF Product Device Data Zload Zsource f = 875 MHz f = 875 MHz f = 845 MHz f = 845 MHz VDD = 32 V, IDQ = 200 mA, Pout = 75 W CW f MHz Zsource Ω Zload Ω 845 0.58 - j0.29 1.60 + j0.07 860 0.56 - j0.11 1.65 + j0.22 875 0.56 + j0.06 1.79 + j0.38 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Zo = 2 Ω load Figure 5. Series Equivalent Source and Load Impedance MRF373ALR1 MRF373ALSR1 Freescale Semiconductor RF Product Device Data 5 PACKAGE DIMENSIONS B M T A M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 NOT RECOMMENDED FOR NEW DESIGN 3 B (FLANGE) 2 D bbb M T A K 2X 2X M B R M (LID) ccc N (LID) ccc M T A M B M T A M B M F H M C E S (INSULATOR) T M (INSULATOR) A aaa SEATING PLANE bbb M T A M B M T A M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE M A CASE 360B - 05 ISSUE G NI - 360 MRF373ALR1 MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF NOT RECOMMENDED FOR NEW DESIGN Q aaa 2X G MRF373ALR1 MRF373ALSR1 6 Freescale Semiconductor RF Product Device Data NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN MRF373ALR1 MRF373ALSR1 Freescale Semiconductor RF Product Device Data 7 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN MRF373ALR1 MRF373ALSR1 8 Freescale Semiconductor RF Product Device Data PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 7 Sept. 2008 Description • Replaced Case Outline 360C - 05, Issue E with Issue F, p. 7 - 8. • Added Product Documentation and Revision History, p. 9 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices MRF373ALR1 MRF373ALSR1 Freescale Semiconductor RF Product Device Data 9 Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: MRF373ALR1 MRF373ALSR1 Document Number: MRF373A Rev. 7, 9/2008 10 Freescale Semiconductor RF Product Device Data