Microsemi JANTXV2N3716 Npn high power silicon transistor Datasheet

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/408
Devices
Qualified Level
2N3715
JAN
JANTX
JANTXV
2N3716
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 250C
@ TC =1000C
Operating & Storage Junction Temperature Range
Symbol
2N3715
2N3716
Units
VCEO
VCBO
VEBO
IB
IC
PT
60
80
80
100
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
TJ, Tstg
7.0
4.0
10
5.0
85.7
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 28.57 mW/0C for TA >250C
2) Derate linearly 0.857 W/0C for TC >1000C
Symbol
RθJC
Max.
1.17
Unit
C/W
TO-3* (TO-204AA)
0
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N3715
2N3716
V(BR)CEO
60
80
2N3715
2N3716
ICBO
10
10
µAdc
IEBO
1.0
mAdc
ICEX
1.0
1.0
mAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 80 Vdc
VCB = 100 Vdc
Emitter-Base Breakdown Voltage
VEB = 7.0 Vdc
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc, VCE = 60 Vdc
VBE = 1.5 Vdc, VCE = 80 Vdc
2N3715
2N3716
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
120101
Page 1 of 2
2N3715, 2N3716 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
VCE = 60 Vdc
VCE = 80 Vdc
Symbol
2N3715
2N3716
Min.
ICES
Max.
Unit
1.0
1.0
mAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 3.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 2.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 2.0 Adc
Base-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 2.0 Adc
hFE
50
30
10
5.0
150
120
VCE(sat)
1.0
2.5
VBE(sat)
1.5
3.0
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 100 kHz – 1.0 MHz
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 1.0 MHz
hfe
4.0
20
hfe
30
300
Cobo
500
pF
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t ≥ 1.0 s
Test 1
VCE = 15 Vdc, IC = 10 Adc
Test 2
VCE = 40 Vdc, IC = 3.75 Adc
Test 3
VCE = 55 Vdc, IC = 0.9 Adc
2N3715
VCE = 65 Vdc, IC = 0.9 Adc
2N3716
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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