ACE ACE24C08FM+UH Two-wire serial eeprom Datasheet

ACE24(L)C02/04/08/16
Technology
Two-wire Serial EEPROM
Description
The ACE24(L)C02/04/08/16 provides 2048 / 4096 / 8192 / 16384 bits of serial electrically erasable and
programmable read-only memory (EEPROM) organized as 256/512/1024/2048 words of 8 bits each. The device is
optimized for use in many industrial and commercial applications where low-power and low-voltage
operations are essential.
Features
z Low Operation Voltage:
ACE24C02/04/08/16 : Vcc=2.2V to 5.5V
ACE24LC02/04/08/16 : Vcc=1.7V to 3.6V
z Internally Organized: 266x/(2K), 512x8(4K), 1024x8(8K) or 204/x8(16K)
z Two-wire Serial Interface
z Schmitt Trigger, Filtered Inputs for Noise Suppression
z Bi-directional Data Transfer Protocol
z ACE24C02/04/08/16 :100kHz(2.2V) and 400kHz(5V) Compatibility
ACE24LC02/04/08/16 :1MHz (3.6V,2.7V,2.5V) and 400 kHz (1.7V) Compatibility
z Write Protect Pin for Hardware Data Protection
z 8-byte Page(02), 16-byte Page (04,08,16) Write Modes
z Partial Page Writes are Allowed
z Self-timed Write Cycle (5 ms max)
z High-reliability - Endurance: 1,000,000 Write Cycles
- Data Retention: 100 Years
z
PDIP-8,SOP-8,TSSOP-8 ROHS compliant Packages
z Wafer Sales: available in inked wafer Form
Absolute Maximum Ratings
Operating Temperature
-55℃ to +125℃
Storage Temperature
-65℃ to +150℃
Voltage on Any Pin with Respect to Ground
-1.0V to +7.0V
Maximum Operating Voltage ACE24(L)C02/04/08/16
6.25V
DC Output Current
5.0 mA
*Notice: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
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ACE24(L)C02/04/08/16
Technology
Two-wire Serial EEPROM
Packaging Type
Pin Configurations
Pin Name
Function
A0~A2
Device Address Inputs
SDA
Serial Data Input / Output
SCL
Serial Clock Input
WP
Write Protect
VCC
Power Supply
GND
Ground
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ACE24(L)C02/04/08/16
Two-wire Serial EEPROM
Technology
Block Diagram
Figure 1
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ACE24(L)C02/04/08/16
Two-wire Serial EEPROM
Technology
Ordering information
Selection Guide
ACE24(L)C02/04/08/16 XX
+
X H
Halogen-free
U : Tube
T : Tape and Reel
Pb - free
DP : PDIP-8
FM : SOP-8
TM : TSSOP-8
Serial Clock (SCL):
The SCL input is used to positive edge clock data into each EEPROM device and negative edge clock
data out of each device.
Serial Data (SDA):
The SDA pin is bi-directional for serial data transfer. This pin is open-drain driven and may be
wire-ORed with any number of other open-drain or open-collector devices.
Device/Page Addresses (A2, A1, A0):
The A2, A1 and A0 pins are device address inputs that are hard wired for the ACE24(L)C02, As many
as eight 2K devices may be addressed on a single bus system (device addressing is discussed in
detail under the Device Addressing section).
The ACE24(L)C04 uses the A2 and A1 inputs for hard wire addressing and a total of four 4K devices
may be addressed on a single bus system. The A0 pin is a no connect.
The ACE24(L)C08 only uses A2 input for hardwire addressing and a total of two 8K devices may be
addressed on a single bus system. The A0 and A1 pins are no connects.
The ACE24(L)C16 does not use the device address pins, which limits the number of devices on a
single bus to one. The A0, A1 and A2 pins are no connects.
Write Protect (WP):
The ACE24(L)C02/04/08/16 has a Write Protect pin that provides hardware data protection. The Write Protect
pin allows normal read/write operations when connected to ground (GND). When the Write Protect pin is
conceded to Vcc the write protection feature is enabled.
Write Protect Description
WP Pin Status
Part of the Array Protected
ACE24(L)C02 ACE24(L)C04 ACE24(L)C08
ACE24(L)C16
WP=VCC
Full (2K) Array Full (4K) Array Full (8K) Array Upper Half (8K) Array
WP=GND
Normal Read / Write Operations
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Two-wire Serial EEPROM
Technology
Memory Organization
ACE24(L)C02, 2K SERIAL EEPROM:
Internally organized with 32 pages of 8 bytes each, the 2K requires an 8-bit data word address
for random word addressing.
ACE24(L)C04, 4K SERIAL EEPROM:
Internally organized with 32 pages of 16 bytes each, the 4K requires a 9-bit data word address
for random word addressing.
ACE24(L)C08, 8K SERIAL EEPROM:
Internally organized with 64 pages of 16 bytes each, the 8K requires a 10-bit data word
address for random word addressing.
ACE24(L)C16, 16K SERIAL EEPROM:
Internally organized with 128 pages of 16 bytes each, the 16K requires an 11-bit data word
address for random word addressing.
Pin Capacitance
Applicable over recommended operating range from: TA = 25℃, f = 1.0 MHz, VCC = +2.2V.
Symbol
CI/O
1
CIN 1
Test Condition
Max
Units
Conditions
Input / Output Capacitance (SDA)
8
pF
VI/O = 0V
Input Capacitance (A0, A1, A2, SCL)
6
pF
VIN = 0V
Note: 1. This parameter is characterized and is not 100% tested.
DC Characteristics
ACE24C02/04/08/16
Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +2.5V to +5.5V, (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
Units
5.5
V
VCC
Supply Voltage
ICC1
Supply Current
VCC = 5.0V, Read at 100K
0.4
1.0
mA
ICC2
Supply Current
VCC = 5.0V, Write at 100K
2.0
3.0
mA
ISB1
Standby Current
VCC = 2.2V, VIN = VCC/ VSS
1.0
µA
ISB2
Standby Current
VCC = 5.0V, VIN = VCC/ VSS
6.0
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL1
Input Low Level
VIH1
Input High Level
VOL
Output Low Level
2.2
Max
VIN = VCC/VSS
0.10
3.0
µA
VOUT = VCC/ VSS
0.05
3.0
µA
-0.6
VCCx0.3
V
VCCx0.7
VCC+0.5
V
0.4
V
VCC = 2.7V, IOL = 2.1 mA
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Two-wire Serial EEPROM
Technology
ACE24LC02/04/08/16
Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +1.7V to +3.6V, (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
3.6
V
VCC
Supply Voltage
1.7
ICC1
Supply Current
VCC = 3.6V, Read at 100K
0.4
1.0
mA
ICC2
Supply Current
VCC = 3.6V, Write at 100K
1.5
2.0
mA
ISB1
Standby Current
VCC = 1.7V, VIN = VCC/ VSS
1.0
µA
ISB2
Standby Current
VCC = 3.6V, VIN = VCC/ VSS
3.0
µA
ILI
Input Leakage Current
VIN = VCC/VSS
0.10
3.0
µA
ILO
Output Leakage Current
VIL1
VOUT = VCC/ VSS
0.05
3.0
µA
Input Low Level
VIH1
-0.6
VCCx0.3
V
Input High Level
VCCx0.7
5.5
V
VOL
Output Low Level
VCC = 2.7V, IOL = 2.1 mA
0.4
V
VOL1
Output Low Level
VCC = 3.0V, IOL = 2.1 mA
0.4
V
VOL2
Output Low Level
VCC = 1.8V, IOL = 0.15 mA
0.2
V
Note: 1. VIL min and VIH max are reference only and are not tested.
AC Characteristics
ACE24C02/04/08/16
Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +2.5V to +5.5V, CL = 1 TTL Gate and 100
pF (unless otherwise noted). Test conditions are listed in Note 2.
Symbol
Parameter
2.2-volt
5.0-volt
Min Max Min Max
fSCL
Clock Frequency, SCL
TLOW
Clock Pulse Width Low
4.7
1.2
µs
THIGH
Clock Pulse Width High
4.0
0.6
µs
Clock Low to Data Out Valid
0.1 4.5 0.1 0.9
µs
4.7
1.2
µs
TAA
TBUF1
Time the bus must be free before a new transmission can
Start
100
400
Units
kHz
THD.STA
Start Hold Time
4.0
0.6
µs
TSU.STA
Start Setup Time
4.7
0.6
µs
THD.DAT
Data In Hold Time
0
0
µs
TSU.DAT
Data In Setup Time
200
100
ns
TR
Inputs Rise Time
1.0
0.3
µs
TF
Inputs Fall Time
300
300
ns
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Two-wire Serial EEPROM
Technology
TSU.STO
Stop Setup Time
4.7
0.6
µs
TDH
Data Out Hold Time
100
50
ns
TWR
Write Cycle Time
5
Endurance(1) 5.0V, 25℃, Page Mode
5
ms
Write
1,000,000
Cycles
ACE24LC02/04/08/16
Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +1.7V to +3.6V, CL = 1 TTL Gate and 100
pF (unless otherwise noted). Test conditions are listed in Note 2.
1.7-volt
2.5-volt
3.6-volt
Symbol
Parameter
fSCL
Clock Frequency, SCL
TLOW
Clock Pulse Width Low
1.3
0.4
0.4
µs
THIGH
Clock Pulse Width High
0.6
0.4
0.4
µs
TAA
Clock Low to Data Out Valid
TBUF1
Time the bus must be free before a new
transmission can Start
Min Max Min Max Min Max
400
1000
1000
Units
kHz
0.05 0.9 0.05 0.55 0.05 0.55
µs
1.3
0.5
0.5
µs
THD.STA
Start Hold Time
0.6
0.25
0.25
µs
TSU.STA
Start Setup Time
0.6
0.25
0.25
µs
THD.DAT
Data In Hold Time
0
0
0
µs
TSU.DAT
Data In Setup Time
100
100
100
ns
TR
Inputs Rise Time
0.3
0.3
0.3
µs
TF
Inputs Fall Time
300
100
100
ns
TSU.STO
Stop Setup Time
0.6
0.25
0.25
µs
TDH
Data Out Hold Time
50
50
50
ns
TWR
Write Cycle Time
Endurance1
3.3V, 25℃, Page Mode
5
5
1,000,000
5
ms
Write
Cycles
Notes:1. This parameter is characterized and not 100% tested.
2.AC measurement conditions:
RL (connects to Vcc): 1.3kΩ
Input pulse voltages: 0.3 Vcc to 0.7 Vcc
Input rise and fall times: ≦50 ns
Input and output timing reference voltages: 0.5Vcc
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Technology
Two-wire Serial EEPROM
Device Operation
Clock and Data Transitions:
The SDA pin is normally pulled high with an external device. Data on the SDA pin may change only
during SCL low time periods (refer to Figure 4). Data changes during SCL high periods will indicate a
start or stop condition as defined below.
Start Condition:
A high-to-low transition of SDA with SCL high is a start condition which must precede any other
command (refer to Figure 5).
Stop Condition:
A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command
will place the EEPROM in a standby power mode (refer to Figure 5).
All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The
EEPROM sends a zero during the ninth clock cycle to acknowledge that it has received each word. The
happens during the ninth clock cycle. Following receipt each word from the EEPROM, the
microcontroller should send a zero to EEPROM and continue to output the next data word or send a
stop condition to finish the read cycle.
Standby Mode :
The ACE24(L)C02/04/08/16 features a low-power standby mode which is enabled: (a) upon power-up
and (b) after the receipt of the stop bit and the completion of any internal operations.
Device Reset :
After an interruption in protocol power loss or system reset, any two-wire part can be protocol reset by following
these steps:
1. Clock up to 9 cycles.
2. Look for SDA high in each cycle while SCL is high and then.
3. Create a start condition.
Bus Timing
Figure 2.SCL: Serial Clock, SDA: Serial Data I/O
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Two-wire Serial EEPROM
Write Cycle Timing
Figure 3.SCL: Serial Clock, SDA: Serial Data I/O
Note: The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write
cycle.
Figure 4.Data Validity
Figure 5.Start and Stop Definition
Figure 6.Output Acknowledge
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Two-wire Serial EEPROM
Device Addressing
The 2K, 4K, 8K and 16K EEPROM devices all require an 8-bit device address word following a start
condition to enable the chip for a read or write operation (refer to Figure 7).
The device address word consists of a mandatory one, zero sequence for the first four most
significant bits as shown. This is common to all the EEPROM devices.
The next 3 bits are the A2, A1 and A0 device address bits for the 2K EEPROM. These 3 bits must
compare to their corresponding hard-wired input pins.
The 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a memory page
address bit. The two device address bits must compare to their corresponding hard-wired input pins.
The A0 pin is no connect.
The 8K EEPROM only uses the A2 device address bit with the next 2 bits being for memory page
addressing. The A2 bit must compare to its corresponding hard-wired input pin. The A1 and A0 pins are
no connect.
The 16K does not use any device address bits but instead the 3 bits are used for memory page
addressing. These page addressing bits on the 4K, 8K and 16K devices should be considered the
most significant bits of the data word address which follows. The A0, A1 and A2 pins are no connect.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if
this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address,
the EEPROM will output a zero. If a compare is not made, the chip will return to a standby state.
Write Operations
Byte Write:
A write operation requires an 8-bit data word address following the device address word and
acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero and then
clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a
zero and the addressing device, such as a microcontroller, must terminate the write sequence with a
stop condition. At this time the EEPROM enters an internally timed write cycle, tWR, to the nonvolatile
memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write
is complete (refer to Figure 8).
Page Write:
The 2K EEPROM is capable of an 8-byte page write, and the 4K, 8K and 16K devices are capable of
16-byte page writes.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the
first data word, the microcontroller can transmit up to seven (2K) or fifteen (4K, 8K, 16K) more data
words. The EEPROM will respond with a zero after each data word received. The microcontroller must
terminate the page write sequence with a stop condition (refer to Figure 9).
The data word address lower three (2K) or four (4K, 8K, 16K) bits are internally incremented following
the receipt of each data word. The higher data word address bits are not incremented, retaining the
memory page row location. When the word address, internally generated, reaches the page boundary,
the following byte is placed at the beginning of the same page. If more than eight (2K) or sixteen (4K,
8K, 16K) data words are transmitted to the EEPROM, the data word address will “roll over” and previous
data will be overwritten.
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Two-wire Serial EEPROM
Acknowledge Polling:
Once the internally timed write cycle has started and the EEPROM inputs are disabled, acknowledge
polling can be initiated. This involves sending a start condition followed by the device address word.
The read/write bit is representative of the operation desired. Only if the internal write cycle has
completed will the EEPROM respond with a zero allowing the read or write sequence to continue.
Read operations are initiated the same way as write operations with the exception that the read/write
select bit in the device address word is set to one. There are three read operations: current address
read, random address read and sequential read.
Current Address Read:
The internal data word address counter maintains the last address accessed during the last read or
write operation, incremented by one. This address stays valid between operations as long as the chip
power is maintained. The address “roll over” during read is from the last byte of the last memory page
to the first byte of the first page. The address “roll over” during write is from the last byte of the current
page to the first byte of the same page.
Once the device address with the read/write select bit set to one is clocked in and acknowledged by
the EEPROM, the current address data word is serially clocked out. The microcontroller does not
respond with an input zero but does generate a following stop condition (refer to Figure 10).
Random Read:
A random read requires a “dummy” byte write sequence to load in the data word address. Once the
device address word and data word address are clocked in and acknowledged by the EEPROM, the
microcontroller must generate another start condition. The microcontroller now initiates a current
address read by sending a device address with the read/write select bit high. The EEPROM
acknowledges the device address and serially clocks out the data word. The microcontroller does not
respond with a zero but does generate a following stop condition (refer to Figure 11).
Sequential Read:
Sequential reads are initiated by either a current address read or a random address read. After the
microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM
receives an acknowledge, it will continue to increment the data word address and serially clock out
sequential data words. When the memory address limit (2K,8K,16K) is reached, the data word address
will “roll over” and the sequential read will continue. The sequential read operation is terminated when
the microcontroller does not respond with a zero but does generate a following stop condition (refer to
Figure 12).
Figure 7.Device Address
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ACE24(L)C02/04/08/16
Technology
Two-wire Serial EEPROM
Figure 8.Byte Write
Figure 9.Page Write
Figure 10.Current Address Read
Figure 11. Random Read
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Two-wire Serial EEPROM
Figure 12. Sequential Read
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Two-wire Serial EEPROM
Packaging information
PDIP-8
Note: Dimensions in Millimeters.
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Two-wire Serial EEPROM
SOP-8
Note: Dimensions in Millimeters.
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Two-wire Serial EEPROM
TSSOP-8
Note: Dimensions in Millimeters.
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Two-wire Serial EEPROM
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
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