MMBTA06 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features ● For Switching and Amplifier Applications ● Complementary Type PNP Transistor MMBTA56 SOT- 23 Marking: ● 1GM Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA C B E Typ Max Electrical Characteristics (Ta=25℃ Unless otherwise specified） Parameter Symbol Test conditions Min Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 4 V Collector cut-off current ICBO VCB=80V, IE=0 0.1 µA Collector cut-off current ICES VCE=60V, IB=0 0.1 µA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 µA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC=100mA 100 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1.2 V Transition frequency fT VCE=2V,IC=10mA, f=100MHz 100 High Diode Semiconductor MHz 1 Typical Characteristics Static Characteristic 90 o Ta=100 C hFE 450uA 70 VCE=1V COMMON EMITTER Ta=25℃ 500uA 400uA 60 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 80 hFE —— IC 500 350uA 50 300uA 40 250uA 200uA 30 150uA 20 o Ta=25 C 100 100uA 10 IB=50uA 0 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE 8 VCE 9 20 10 1 VCEsat —— IC 1 10 100 COLLECTOR CURRENT (V) VBEsat —— 10 IC 500 (mA) IC β=10 0.1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 Ta=100℃ Ta=25℃ 0.01 Ta=25℃ 1 Ta=100℃ 0.1 1 10 COLLECTOR CURRENT IC VBE —— 100 500 100 1 10 (mA) IC Cob / Cib 1000 500 100 COLLECTOR CURRENT —— IC (mA) VCB / VEB IC (mA) f=1MHz IE=0 / IC=0 o (pF) 0.1 0.0 10 Cib Cob VCE=1V 0.3 0.6 0.9 BASE-EMITTER VOLTAGE fT —— 1 0.1 1.2 1 IC Pc 0.4 COLLECTOR POWER DISSIPATION Pc (W) 100 TRANSITION FREQUENCY 10 REVERSE VOLTAGE VBE(V) (MHz) 300 C T= a 25 ℃ 1 100 CAPACITANCE C o T= a 10 0 COLLECTOR CURRENT 10 fT Ta=25 C —— V (V) Ta 0.3 0.2 0.1 VCE=2V o Ta=25 C 10 3 70 10 COLLECTOR CURRENT IC (mA) 0.0 0 25 50 75 100 AMBIENT TEMPERATURE High Diode Semiconductor 125 Ta 150 (℃ ) 2 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 4