IPS60R650CE MOSFET 600VCoolMOSªCEPowerTransistor IPAKSL CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. tab Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Drain Pin 2, Tab Gate Pin 1 Applications Source Pin 3 PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 650 mΩ I. 9.9 A Qg.typ 20.5 nC ID,pulse 19 A Eoss@400V 1.9 µJ Type/OrderingCode Package IPS60R650CE PG-TO 251 Final Data Sheet Marking 60S650CE 1 RelatedLinks see Appendix A Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 9.9 6.2 A TC=25°C TC=100°C - 19 A TC=25°C - - 133 mJ ID=1.3A; VDD=50V; see table 11 EAR - - 0.20 mJ ID=1.3A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 1.3 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-251 Ptot - - 82 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 7 A TC=25°C Diode pulse current IS,pulse - - 19 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 2Thermalcharacteristics Table3ThermalcharacteristicsTO-251 Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.52 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed - - 260 °C Tsold reflow MSL1 1) Limited by Tj max. Maximum duty cycle D=0.50 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=0.25mA 3.0 3.5 V VDS=VGS,ID=0.2mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.54 1.40 0.65 - Ω VGS=10V,ID=2.4A,Tj=25°C VGS=10V,ID=2.4A,Tj=150°C Gate resistance RG - 10 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 440 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 30 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 21 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;seetable10 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;seetable10 Turn-off delay time td(off) - 58 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;seetable10 Fall time tf - 11 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;seetable10 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2.5 - nC VDD=480V,ID=3A,VGS=0to10V Gate to drain charge Qgd - 10.5 - nC VDD=480V,ID=3A,VGS=0to10V Gate charge total Qg - 20.5 - nC VDD=480V,ID=3A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=3A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2) Final Data Sheet 4 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=3A,Tj=25°C 250 - ns VR=400V,IF=3A,diF/dt=100A/µs; see table 9 - 2.1 - µC VR=400V,IF=3A,diF/dt=100A/µs; see table 9 - 16 - A VR=400V,IF=3A,diF/dt=100A/µs; see table 9 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) Diagram3:Max.transientthermalimpedance(NonFullPAK) 101 90 80 70 100 ZthJC[K/W] Ptot[W] 60 50 40 0.5 0.2 0.1 0.05 0.02 10-1 30 0.01 single pulse 20 10 0 0 25 50 75 100 125 10-2 150 10-5 10-4 10-3 TC[°C] 10-2 10-1 tp[s] Ptot=f(TC) ZthJC=f(tP);parameter:D=tp/T Diagram5:Safeoperatingarea(NonFullPAK) Diagram7:Safeoperatingarea(NonFullPAK) 2 102 10 1 µs 101 1 µs 101 10 µs 10 µs 100 µs 100 µs 1 ms 1 ms 100 100 DC ID[A] ID[A] DC 10-1 10-1 10-2 10-2 10-3 100 101 102 103 10-3 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=25°C;D=0;parameter:tp ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 6 103 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE Diagram9:Typ.outputcharacteristics Diagram10:Typ.outputcharacteristics 20 12 20 V 20 V 10 V 10 V 8V 16 9 8V 7V ID[A] ID[A] 12 7V 6V 6 8 5.5 V 6V 3 5.5 V 4 5V 4.5 V 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram11:Typ.drain-sourceon-stateresistance Diagram12:Drain-sourceon-stateresistance 2.0 1.60 1.50 1.9 1.40 1.8 1.30 1.7 1.20 5V 5.5 V 6.5 V 6V RDS(on)[Ω] RDS(on)[Ω] 1.10 7V 1.6 10 V 1.5 1.4 1.00 0.90 98% typ 0.80 0.70 1.3 0.60 1.2 0.50 0.40 1.1 1.0 0.30 0 2 4 6 8 10 12 0.20 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=2.4A;VGS=10V 7 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE Diagram13:Typ.transfercharacteristics Diagram14:Typ.gatecharge 20 10 25 °C 9 16 8 14 7 12 6 10 VGS[V] ID[A] 18 150 °C 4 6 3 4 2 2 1 0 2 4 6 8 10 0 12 480 V 5 8 0 120 V 0 5 VGS[V] 10 15 20 25 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=3.0Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode Diagram16:Avalancheenergy 2 10 150 25 °C 125 °C 125 101 IF[A] EAS[mJ] 100 100 75 50 25 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=1.3A;VDD=50V 8 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE Diagram17:Drain-sourcebreakdownvoltage Diagram18:Typ.capacitances 104 700 680 660 103 Ciss 620 C[pF] VBR(DSS)[V] 640 600 102 Coss 580 101 560 Crss 540 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=0.25mA C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy 2.5 2.0 Eoss[µJ] 1.5 1.0 0.5 0.0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 9 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE 6PackageOutlines DOCUMENT NO. Z8B00003329 DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN MAX 2.18 2.40 0.80 1.14 0.64 0.89 0.65 1.15 4.95 5.50 0.46 0.59 0.46 0.89 5.97 6.22 5.04 5.55 6.35 6.73 4.60 5.21 2.29 4.57 3 3.00 3.60 0.80 1.25 0.88 1.28 INCHES MIN 0.086 0.031 0.025 0.026 0.195 0.018 0.018 0.235 0.198 0.250 0.181 MAX 0.094 0.045 0.035 0.045 0.217 0.023 0.035 0.245 0.219 0.265 0.205 0.090 0.180 3 0.118 0.031 0.035 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 21-10-2015 0.142 0.049 0.050 REVISION 06 Figure1OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE 7AppendixA Table11RelatedLinks • IFXCoolMOSTMCEWebpage:www.infineon.com • IFXCoolMOSTMCEapplicationnote:www.infineon.com • IFXCoolMOSTMCEsimulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPS60R650CE RevisionHistory IPS60R650CE Revision:2016-02-26,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-02-26 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.0,2016-02-26