IXYS IXGX50N60B2D1 Hiperfast igbt with diode Datasheet

Advance Technical Data
HiPerFAST TM
IGBT with Diode
IXGK 50N60B2D1 VCES
IXGX 50N60B2D1 IC25
VCE(sat)
B2-Class High Speed IGBTs
tfi(typ)
Symbol
Test Conditions
Maximum Ratings
V CES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC110
TC = 110°C
50
A
IF110
TC = 110°C (50N60B2D1 Diode)
ICM
TC = 25°C, 1 ms
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
(RBSOA)
Clamped inductive load @ VCE ≤ 600 V
PC
TC = 25°C
38
A
200
A
ICM = 80
A
400
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque, TO-264
Weight
TO-264
PLUS247
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 40 A, VGE = 15 V
Note 1
© 2004 IXYS All rights reserved
g
g
300
°C
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
= 250 µA, VCE = VGE
VGE(th)
10
6
3.0
TJ = 25°C
TJ = 125°C
TJ = 125°C
1.6
1.5
5.0
V
600
5
µA
mA
±100
nA
2.0
V
V
= 600 V
= 75 A
= 2.0 V
= 65 ns
TO-264
(IXGK)
G
(TAB)
C
E
PLUS247
(IXGX)
C
G = Gate
E = Emitter
(TAB)
E
C = Collector
Tab = Collector
Features
• High frequency IGBT and
anti-parallel FRED in one package
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
DS99146A(03/04)
IXGK 50N60B2D1
IXGX 50N60B2D1
Symbol
Test Conditions
55
S
3500
220
pF
pF
Cres
50
pF
Qg
Qge
140
23
nC
nC
44
nC
gfs
Cies
Coes
IC = 40 A; VCE = 10 V,
Note 1
40
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Dim.
Inductive load, TJ = 25°°C
IC = 40 A, VGE = 15 V
18
ns
25
ns
190 300
VCE = 480 V, RG = Roff = 5.0 Ω
ns
0.55 0.85 mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
18
25
0.9
290
140
1.55
ns
ns
mJ
ns
ns
mJ
0.15
0.31 K/W
K/W
Inductive load, TJ = 125°°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5.0 Ω
RthJC
RthCK
Reverse Diode (FRED)
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
ns
65
Eoff
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247 Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = 60 A, VGE = 0 V,
Note 1
IRM
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µs TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
t rr
TO-264 Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TJ = 150°C
35
RthJC
2.1
1.4
V
8.3
A
ns
0.65 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGK 50N60B2D1
IXGX 50N60B2D1
Fig. 1. Output Characte ristics
@ 25 Deg. C
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
320
80
VGE = 15V
13V
11V
70
9V
60
50
40
30
6V
20
9V
200
160
120
7V
80
10
40
5V
0
5V
0
0.5
1
1.5
2
2.5
3
0
1
2
3
Fig. 3. Output Characteristics
@ 125 Deg. C
VGE = 15V
13V
11V
70
I C - Amperes
7V
50
6V
30
20
10
7
8
V GE = 15V
1.3
40
6
1.4
9V
60
5
Fig. 4. De pende nce of V CE(sat) on
Tem perature
V C E (sat)- Normalized
80
4
V C E - Volts
V C E - Volts
1.2
I C = 80A
1.1
1.0
0.9
I C = 40A
0.8
0.7
5V
0
I C = 20A
0.6
0.5
1
1.5
2
2.5
3
-50
-25
0
V CE - Volts
25
50
75
100
125
150
8
8.5
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
200
3.7
TJ = 25ºC
3.4
180
160
3.1
I C = 80A
40A
20A
2.8
2.5
I C - Amperes
VC E - Volts
11V
240
7V
I C - Amperes
I C - Amperes
VGE = 15V
13V
280
2.2
140
120
100
80
TJ = 125ºC
25ºC
-40ºC
60
1.9
40
1.6
20
1.3
0
5
6
7
8
9
10 11 12
V G E - Volts
© 2004 IXYS All rights reserved
13 14 15 16 17
4
4.5
5
5.5
6
6.5
V G E - Volts
7
7.5
IXGK 50N60B2D1
IXGX 50N60B2D1
Fig. 8. Dependence of Turn-Off
Energy on RG
Fig. 7. Transconductance
5
80
4
50
40
30
3
2.5
1.5
1
10
I C = 20A
0.5
0
0
0
4
20
40
60
80
5
100 120 140 160 180 200
15
20
25
30
35
40
Fig. 9. Dependence of Turn-Off
Energy on IC
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
3
2
1.5
TJ = 25ºC
1
2
1
0
0
50
I C - Amperes
I C = 40A
1.5
0.5
40
I C = 80A
2.5
0.5
30
R G = 5Ω
R G = 24.4Ω - - VGE = 15V
VCE = 480V
3.5
TJ = 125ºC
20
60
70
80
I C = 20A
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on IC
400
Switching Time - nanosecond
td(off)
tfi - - - - - TJ = 125ºC
VGE = 15V
VCE = 480V
500
50
4
2.5
1000
45
R G - Ohms
E off - milliJoules
3
10
I C - Amperes
R G = 5Ω
R G = 24.4 Ω - - - VGE = 15V
VCE = 480V
3.5
E off - MilliJoules
I C = 40A
2
20
Switching Time - nanosecond
I C = 80A
3.5
E off - milliJoules
g f s - Siemens
60
TJ = 125ºC
VGE = 15V
VCE = 480V
4.5
TJ = -40ºC
25ºC
125ºC
70
I C = 20A
I C = 40A
I C = 80A
td(off)
tfi - - - - - -
350
R G = 5Ω
VGE = 15V
VCE = 480V
300
250
TJ = 125ºC
200
150
TJ = 25ºC
100
100
50
0
5
10
15
20
25
30
R G - Ohms
35
40
45
50
20
30
40
50
60
70
80
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGK 50N60B2D1
IXGX 50N60B2D1
Fig. 13. De pendence of Turn-Off
Sw itching Tim e on Te m perature
Fig. 14. Reverse -Bias
Safe Operating Are a
90
td(off)
tfi - - - - - -
300
80
R G = 5Ω
VGE = 15V
VCE = 480V
250
70
60
200
I C = 40A
150
I C - Amperes
Switching Time - nanosecond
350
I C = 20A
I C = 80A
100
50
40
TJ = 125º C
30
R G = 10Ω
dV/dT < 10V/ns
20
50
10
0
0
25
35
45
55
65
75
85
95
105 115 125
100
200
300
TJ - Degrees Centigrade
V
500
600
- Volts
Fig. 16. Capacitance
Fig. 15. Gate Charge
10000
16
VCE = 300V
I C = 40A
I G = 10mA
14
f = 1 MHz
Capacitance - p F
12
VG E - Volts
400
CE
10
8
6
C ies
1000
C oes
100
4
2
C res
0
10
0
30
60
90
120
150
0
5
10
Q G - nanoCoulombs
15
20
25
V C E - Volts
30
35
40
Fig. 17. Maxim um Transient Therm al Resistance
0.35
R ( t h ) J C - ºC / W
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1
© 2004 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000
IXGK 50N60B2D1
IXGX 50N60B2D1
160
A
140
IF
4000
nC
120
3000
TVJ= 25°C
100
TVJ=100°C
2000
TVJ= 100°C
VR = 300V
A
60
IF=120A
IF= 60A
IF= 30A
Qr
80
80
TVJ= 100°C
VR = 300V
IRM
IF=120A
IF= 60A
IF= 30A
40
TVJ=150°C
60
40
1000
20
20
0
0
1
2
0
100
V
VF
Fig. 18. Forward current IF versus VF
0
A/µs 1000
-diF/dt
Fig. 19. Reverse recovery charge Qr
versus -diF/dt
140
2.0
trr
1.5
Kf
120
IRM
400
600 A/µs
800 1000
-diF/dt
20
1.6
V
VFR
15
µs
IF=120A
IF= 60A
IF= 30A
110
1.0
200
Fig. 20. Peak reverse current IRM
versus -diF/dt
TVJ= 100°C
VR = 300V
ns
130
0
1.2
tfr
tfr
VFR
10
0.8
5
0.4
100
0.5
0.0
Qr
0
40
90
80
80
120 °C 160
0
200
400
600
TVJ
0
800 1000
A/µs
TVJ= 100°C
IF = 60A
0
200
400
-diF/dt
Fig. 21. Dynamic parameters Qr, IRM
versus TVJ
Fig. 22. Recovery time trr versus -diF/dt
1
0.0
600 A/µs
800 1000
diF/dt
Fig. 23. Peak forward voltage VFR and
tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
ZthJC
0.01
Rthi (K/W)
ti (s)
0.324
0.125
0.201
0.0052
0.0003
0.0385
Note: Fig. 18 through Fig. 23 show
typical values
0.001
0.0001
0.00001
DSEP 60-06A
0.0001
0.001
0.01
0.1
s
t
1
Fig. 24. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344