MPSA 94 PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MPSA 44 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage -VCBO 400 V Collector Emitter Voltage -VCEO 400 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 300 mA Power Dissipation Ptot 625 mW Tj 150 O -55 to +150 O Junction Temperature Storage Temperature Range TS C C Dated : 07/12/2002 MPSA 94 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit at -IC=1mA, -VCE=10V hFE 25 - - - at -IC=10mA, -VCE=10V hFE 40 - - - at -IC=30mA, -VCE=10V hFE 25 - - - -IEBO - - 0.1 μA -ICBO - - 0.1 μA -ICES - - 1 μA -V(BR)CBO 400 - - V -V(BR)CEO 400 - - V -V(BR)EBO 6 - - V -V(BR)CES 400 - - V at -IC=10mA, -IB=1mA -VCE(sat) - - 0.5 V at -IC=50mA, -IB=5mA -VCE(sat) - - 0.75 V -VBE(sat) - - 0.75 V Cob - - 7 pF DC Current Gain Emitter Cutoff Current at –VEB=4V Collector Cutoff Current at -VCB=300V Collector Cutoff Current at -VCE=400V Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10μA Collector Emitter Breakdown Voltage at -IC=100μA Collector Saturation Voltage Base Saturation Voltage at -IC=10mA, -IB=1mA Collector Output Capacitance at -VCB=20V, f=1MHz Dated : 07/12/2002