Renesas BCR5LM-12LB Triac medium power use Datasheet

Preliminary Datasheet
BCR5LM-12LB
Triac
R07DS0065EJ0100
Rev.1.00
Jul 27, 2010
Medium Power Use
Features




 The Product guaranteed maximum junction
temperature 150C
 Insulated Type
 Planar Type
 UL Recognized : File No. E223904
IT (RMS) : 5 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 20 mA
Viso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2 3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, Television, Stereo system, refrigerator, Washing
machine, infrared kotatsu, and carper, solenoid driver, small motor control, copying machine, electric tool, electric
heater control, and other general purpose control applications
Parameter
Voltage class
12
600
720
Symbol
Note1
Repetitive peak off-state voltage
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
5
Unit
A
Surge on-state current
ITSM
50
A
I2 t
10.4
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Unit
V
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 113C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1  T2  G terminal to case
Notes: 1. Gate open.
R07DS0065EJ0100 Rev.1.00
Jul 27, 2010
Page 1 of 7
BCR5LM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 7 A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
20
20
20
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
4.9
V
C/W
Tj = 125C/150C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5/1
—
—
V/s
Tj = 125C/150C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0065EJ0100 Rev.1.00
Jul 27, 2010
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR5LM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
100
Surge On-State Current (A)
10
7
5
3
2
1
10
7
5
3
2
Tj = 150°C
0
10
7
5
3
2
–1
70
60
50
40
30
20
10
5 7 101
2 3
2 3
5 7 102
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5W
VGM = 10V
Gate Voltage (V)
80
On-State Voltage (V)
102
PGM = 5W
101
VGT
100
IRGT I
VGD = 0.1V
10–1
IGM = 2A
IFGT I, IRGT III
10–2
100
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
90
0 0
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
101
102
103
104
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10
Tj = 25°C
103
7
5
Typical Example
IRGT III
3
2
102
7
5
IRGT I
IFGT I
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
3
10
7
5
Typical Example
3
2
102
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS0065EJ0100 Rev.1.00
Jul 27, 2010
Transient Thermal Impedance (°C/W)
On-State Current (A)
2
102
5.5
103
104
100
101
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10–1
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR5LM-12LB
Preliminary
10
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1 1
On-State Power Dissipation (W)
9
8
7
6
5
4
3
2
360° Conduction
Resistive,
inductive loads
1
0
0
10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
1
2
3
4
5
6
7
8
9 10
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
140
Case Temperature (°C)
10
No Fins
160
120
100
80
60
40
360° Conduction
Resistive,
inductive loads
20
0
0
1
2
3
4
5
6
7
8
140
120
100
120 120 t2.3
100 100 t2.3
60 60 t2.3
80
All fins are black
60 painted aluminum
and greased
40 Curves apply regardless
of conduction angle
20 Resistive, inductive loads
Natural convection
0
0
1
2
3
4
5
6
7
8
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
Maximum On-State Power Dissipation
3
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
R07DS0065EJ0100 Rev.1.00
Jul 27, 2010
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
7
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 7
BCR5LM-12LB
Preliminary
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
2
3
VD = 12V
Distribution
3
2
Typical Example
101
7
5
3
2
Latching Current (mA)
Holding Current (mA)
10
7
5
0
T2+, G+
Typical Example
T2–, G–
Distribution
102
7
5
3
2
T2+, G–
Typical Example
1
10
7
5
3
2
10
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0065EJ0100 Rev.1.00
Jul 27, 2010
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
10
–60 –40–20 0 20 40 60 80 100 120 140 160
10
7
5
3
2
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
3 Minimum
Characteristics
2 Value
100
7 0
10
III Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR5LM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
I Quadrant
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
3
2
Minimum
Characteristics
Value
100
7 0
10
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Typical Example
IRGT III
3
IRGT I
2
102
7
5
IFGT I
3
2
1
10 0
10
2 3
5 7 101
2 3
5 7 102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
103
7
5
Recommended Circuit Values Around The Triac
Load
6Ω
C1
A
6V
330Ω
V
Test Procedure I
R1
A
6V
V
C0
R0
330Ω
Test Procedure II
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0065EJ0100 Rev.1.00
Jul 27, 2010
Page 6 of 7
BCR5LM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Order Code
Lead form
Straight type
Lead form
Standard packing
Plastic Magazine (Tube)
Plastic Magazine (Tube)
Quantity
50
50
Standard order code
Type name
Type name – Lead forming code
Standard order
code example
BCR5LM-12LB
BCR5LM-12LB-A8
Note : Please confirm the specification about the shipping in detail.
R07DS0065EJ0100 Rev.1.00
Jul 27, 2010
Page 7 of 7
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