Vishay BYG22B Ultrafast avalanche smd rectifier Datasheet

BYG22A thru BYG22D
www.vishay.com
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Low forward voltage
• Soft recovery characteristic
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
50 V to 200 V
IFSM
35 A
IR
1.0 μA
VF
1.1 V
trr
25 ns
ER
20 mJ
TJ max.
150 °C
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
BYG22A
BYG22B
BYG22D
BYG22A
BYG22B
BYG22D
50
100
200
UNIT
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
2.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
35
A
ER
20
mJ
TJ, TSTG
- 55 to + 150
°C
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range
Revision: 21-Dec-11
V
Document Number: 88959
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A thru BYG22D
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 1.0 A
Maximum instantaneous
forward voltage
IF = 2.0 A
Maximum reverse current
VR = VRRM
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
TJ = 25 °C
TJ = 25 °C
TJ = 100 °C
SYMBOL
BYG22A
BYG22B
BYG22D
UNIT
1.0
VF (1)
V
1.1
1
IR
µA
10
trr
25
ns
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum thermal resistance, junction to lead, TL = const.
BYG22A
BYG22B
RJL
150
RJA (2)
125
(3)
100
RJA
UNIT
25
(1)
RJA
Maximum thermal resistance, junction to ambient
BYG22D
°C/W
°C/W
Notes
Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
(3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu
2 3
(1)
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BYG22A-E3/TR
0.064
TR
1800
7" diameter plastic tape and reel
BYG22A-E3/TR3
0.064
TR3
7500
13" diameter plastic tape and reel
BYG22AHE3/TR (1)
0.064
TR
1800
7" diameter plastic tape and reel
0.064
TR3
7500
13" diameter plastic tape and reel
PREFERRED P/N
BYG22AHE3/TR3
(1)
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
2.5
Average Forward Current (A)
Forward Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0.0
VR = VRRM
Half Sine-Wave
2.0
RθJA ≤ 25 K/W
1.5
RθJA ≤ 125 K/W
1.0
RθJA ≤ 150 K/W
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
160
Forward Voltage (V)
Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Revision: 21-Dec-11
Document Number: 88959
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A thru BYG22D
www.vishay.com
Vishay General Semiconductor
140
100
TA = 125 °C
Reverse Recovery Time (ns)
Reverse Current (µA)
VR = VRRM
10
120
TA = 100 °C
100
TA = 75 °C
80
TA = 50 °C
60
40
TA = 25 °C
20
IR = 0.5 A, iR = 0.125 A
1
0
25
50
75
100
125
150
0
0.6
0.8
1.0
Forward Current (A)
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Max. Reverse Recovery Time vs. Forward Current
60
50
TA = 125 °C
VR = VRRM
Reverse Recovery Charge (nC)
Reverse Power Dissipation (mW)
0.4
0.2
Junction Temperature (°C)
40
30
PR - Limit
at 100 % VR
20
PR - Limit
at 80 % VR
10
50
TA = 100 °C
40
TA = 75 °C
30
TA = 50 °C
20
TA = 25 °C
10
IR = 0.5 A, iR = 0.125 A
0
0
25
50
75
100
125
0.2
0
150
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current
Thermal Resistance for Pulse Cond. (K/W)
Junction Temperature (°C)
70
f = 1 MHz
Diode Capacitance (pF)
60
50
40
30
20
10
0
0.1
1
10
100
1000
125 K/W DC
100
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
10
tp/T = 0.05
tp/T = 0.02
Single Pulse
tp/T = 0.01
1
10-5
10-4
10-3
10-2
10-1
100
Reverse Voltage (V)
Pulse Length (s)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 8 - Thermal Response
Revision: 21-Dec-11
101
102
Document Number: 88959
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A thru BYG22D
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Dec-11
Document Number: 88959
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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