ECH8659 Ordering number : ENA1224A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8659 General-Purpose Switching Device Applications Features • • • • 4V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 30 V ±20 V 7 A PW≤10μs, duty cycle≤1% 40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8659-TL-H Top View Packing Type : TL 0.25 2.9 8 TE 5 Lot No. 2.3 TL 4 1 0.65 Electrical Connection 0.3 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 2.8 0 t o 0.02 0.25 Marking 0.15 Bot t om View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 52312 TKIM/61808PA TIIM TC-00001318 No. A1224-1/7 ECH8659 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 VDS=10V, ID=3.5A 2.2 RDS(on)1 ID=3.5A, VGS=10V 18 24 mΩ RDS(on)2 ID=2A, VGS=4.5V 29 41 mΩ RDS(on)3 ID=2A, VGS=4V 39 55 mΩ Input Capacitance Ciss 710 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 72 pF Turn-ON Delay Time td(on) 10 ns Rise Time tr 25 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 30 See specified Test Circuit. VDS=15V, VGS=10V, ID=3.5A V 1 μA ±10 μA 2.6 3.7 43 ns 25 ns 11.8 nC 2.4 nC 2.0 IS=7A, VGS=0V V S 0.79 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=3.5A RL=4.3Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8659 P.G 50Ω S Ordering Information Device ECH8659-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1224-2/7 ECH8659 ID -- VDS ID -- VGS 14 V VDS=10V 13 3.5 12 11 VGS=3.0V 2 8 7 6 5 4 3 1 2 0 1 0 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=2A 3.5A 50 40 30 20 10 0 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 5° --2 = °C Ta 75 1.0 °C 25 7 5 3 2 0.1 7 0.01 50 3.0 3.5 4.0 4.5 5.0 IT13724 A I =2.0 4.0V, D = S VG 2.0A , I D= V 5 . 4 = VGS .5A , I D=3 10.0V = V GS 40 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT13726 IS -- VSD 3 2 3 2.5 Ambient Temperature, Ta -- °C 5 2 2.0 60 0 --60 16 VDS=10V 7 1.5 RDS(on) -- Ta IT13725 | yfs | -- ID 10 1.0 70 70 60 0.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 IT13723 VGS=0V 10 7 5 3 2 1.0 7 5 3 2 25° C 0.2 Ta =7 5°C 0 25°C --25° C 3 9 --25 °C 4 10 Ta= 75°C Drain Current, ID -- A 5 16.0V 10.0V 8.0V Drain Current, ID -- A 6 6.0V 4.5V 4.0V 7 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 0.3 5 7 10 2 IT13727 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V SW Time -- ID 100 0.4 1.0 IT13728 Ciss, Coss, Crss -- VDS 2 f=1MHz td(off) 5 3 1000 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 tf 2 td(on) 10 tr 7 5 5 3 2 Coss 100 Crss 7 5 VDD=15V VGS=10V 3 2 0.1 Ciss 7 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 3 3 IT13729 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT13730 No. A1224-3/7 ECH8659 VGS -- Qg 10 VDS=15V ID=3.5A 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 11 12 IT13731 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 10 10 7 5 3 2 ASO IDP=40A 10 1m 0μ s ID=7A s 10 ms 10 DC 1.0 7 5 3 2 0.1 7 5 3 2 PW≤10μs 0m s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13732 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.3 1.2 To t al 1.0 0.8 Di ss 1u nit ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13733 No. A1224-4/7 ECH8659 Embossed Taping Specification ECH8659-TL-H No. A1224-5/7 ECH8659 Outline Drawing ECH8659-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1224-6/7 ECH8659 Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. A1224-7/7