SavantIC Semiconductor Product Specification BDX18 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·LF large signal power amplification ·Suitable for series and shunt regulators, high fidelity amplifiers and power switching circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -15 A IB Base current -7 A PT Total power dissipation 117 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification BDX18 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ; IB=0 -60 V V(BR) EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -7 V Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -1.1 V VBE Base-emitter voltage IC=-4A;VCE=-4V -1.8 V ICEX Collector cut-off current VCE=-90V;VBE=1.5V VCE=-60V;VBE=1.5V;TC=150 -5 -10 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -5 mA hFE DC current gain IC=-4A ; VCE=-4V Transition frequency IC=-1A ; VCE=-10V;f=1MHz VCEsat fT CONDITIONS 2 MIN TYP. 20 MAX UNIT 70 4 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX18