HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .183 .152 .186 .156 FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Medium emission angle for best coverage/power density .209 .220 .100 .041 .017 .024 .043 .143 .150 CATHODE OD-880L .036 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time TEST CONDITIONS IF = 100mA MIN 18 IR = 10MA VR = 0V Fall Time ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 Continuous Forward Current 20 80 nm 30 17 0.5 0.5 1.9 Deg Volts Volts pF Msec Msec 100mA 3A 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C Storage and Operating Temperature Range -55°C TO 100°C Thermal Resistance, RTHJA1 400°C/W Typical Thermal Resistance, RTHJA2 nm 190mW Reverse Voltage Maximum Junction Temperature mW mW/sr 35 5 UNITS 50 1.55 Peak Forward Current (10Ms, 400Hz)2 THERMAL PARAMETERS MAX 880 IF = 50mA IF = 100mA TYP 100°C 135°C/W Typical 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com HIGH-POWER GaAlAs IR EMITTERS 200 OD-880L THERMAL DERATING CURVE 10 PEAK FORWARD CURRENT, Ip (amps) POWER DISSIPATION (mW) INFINITE HEAT SINK 160 140 NO HEAT SINK 120 100 80 60 40 20 0 RELATIVE POWER OUTPUT (%) 100 25 50 75 AMBIENT TEMPERATURE (°C) 100 70 TCASE = 25°C NO PRE BURN-IN PERFORMED 60 4 101 102 103 STRESS TIME, (hrs) IF = 100mA 104 t = 500Ms t T Ip T 0.1 1 DUTY CYCLE, D (%) 10 100 RADIATION PATTERN 60 40 20 0 –50 105 FORWARD I-V CHARACTERISTICS D= t 0.1 80 RELATIVE POWER OUTPUT (%) IF = 50mA t = 100Ms 1 100 IF = 20mA 80 t = 10Ms 0.01 0.01 DEGRADATION CURVE 90 50 1.5 –40 –30 –20 –10 0 10 20 BEAM ANGLE, Q(deg) 30 40 50 POWER OUTPUT vs TEMPERATURE 3 RELATIVE POWER OUTPUT FORWARD CURRENT, IF (amps) 1.4 2 1 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 100 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 SPECTRAL OUTPUT 1,000 80 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 100 60 40 20 0 750 0.5 –50 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 180 MAXIMUM PEAK PULSE CURRENT 800 850 900 WAVELENGTH, L(nm) 950 1,000 10 1 10 DC PULSE 10Ms, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com