LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors MUN2211T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B • The SC–59 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. 3 2 1 SC–59 CASE 318D, STYLE 1 PIN 2 R1 BASE (INPUT) R2 PIN 3 COLLECTOR (OUTPUT) PIN 1 EMITTER (GROUND) MARKINGDIAGRAM DEVICE MARKING INFORMATION *See specific marking information in the device marking table on page 2 of this data sheet. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Total Device Dissipation PD 230(Note 1) TA = 25°C 338(Note 2) Derate above 25°C 1.8 (Note 1) 2.7 (Note 2) Thermal Resistance – RθJA 540(Note 1) Junction-to-Ambient 370(Note 2) Thermal Resistance – RθJL 264(Note 1) Junction-to-Lead 287(Note 2) Junction and Storage TJ, Tstg –55 to +150 Temperature Range 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad 8X M 8X = Specific Device Code* M = Date Code Unit mW °C/W °C/W °C/W °C MUN2211T1 Series–1/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN2211T1 SC–59 8A 10 10 3000/Tape & Reel MUN2212T1 SC–59 8B 22 22 3000/Tape & Reel MUN2213T1 SC–59 8C 47 47 3000/Tape & Reel MUN2214T1 SC–59 8D 10 47 3000/Tape & Reel MUN2215T1 (Note 3) SC–59 8E 10 ∞ 3000/Tape & Reel MUN2216T1 (Note 3) SC–59 8F 4.7 ∞ 3000/Tape & Reel MUN2230T1 (Note 3) SC–59 8G 1.0 1.0 3000/Tape & Reel MUN2231T1 (Note 3) SC–59 8H 2.2 2.2 3000/Tape & Reel MUN2232T1 (Note 3) SC–59 8J 4.7 4.7 3000/Tape & Reel MUN2233T1 (Note 3) SC–59 8K 4.7 47 3000/Tape & Reel MUN2234T1 (Note 3) SC–59 8L 22 47 3000/Tape & Reel MUN2236T1 SC–59 8N 100 100 3000/Tape & Reel MUN2237T1 SC–59 8P 47 22 3000/Tape & Reel MUN2240T1 (Note 3) SC–59 8T 47 ∞ 3000/Tape & Reel MUN2241T1 (Note 3) SC–59 8U 100 ∞ 3000/Tape & Reel 3. New devices. Updated curves to follow in subsequent data sheets. MUN2211T1 Series–2/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 – – – – – – – – – – – – – – – VCE(sat) – – 0.25 – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1 (IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/ MUN2232T1/MUN2233T1/MUN2234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kΩ) VOL MUN2211T1 MUN2212T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2213T1 MUN2240T1 MUN2236T1 MUN2237T1 MUN2241T1 Vdc Vdc 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% MUN2211T1 Series–3/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit VOH 4.9 – – Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 70 32.9 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 100 47 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 130 61.1 100 kΩ R1/R2 0.8 1.0 1.2 0.17 – 0.21 – 0.25 – 0.8 0.055 0.38 1.7 1.0 0.1 0.47 2.1 1.2 0.185 0.56 2.6 ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2230T1 MUN2215T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN2216T1 MUN2233T1 MUN2240T1 Input Resistor Resistor Ratio MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2235T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 MUN2211T1/MUN2212T1/MUN2213T1/ MUN2236T1 MUN2214T1 MUN2215T1/MUN2216T1/MUN2240T1/ MUN2241T1 MUN2230T1/MUN2231T1/MUN2232T1 MUN2233T1 MUN2234T1 MUN2237T1 5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 –50 RθJA = 370°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve MUN2211T1 Series–4/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series 1 1000 IC/IB = 10 VCE = 10 V TA=-25°C 25°C 75°C 0.1 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN2211T1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 TA=-25°C 10 1 0.1 0.01 VO = 5 V 0.001 0 Figure 4. Output Capacitance 10 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 5. Output Current versus Input Voltage TA=-25°C VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current MUN2211T1 Series–5/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series 1000 1 IC/IB = 10 VCE = 10 V TA=-25°C TA=75°C 25°C 25°C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN2212T1 75°C 0.1 0.01 0.001 40 20 60 IC, COLLECTOR CURRENT (mA) 0 -25°C 100 10 80 1 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 2 1 0 0 10 20 30 40 50 75°C 25°C TA=-25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 2 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 10 TA=-25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current MUN2211T1 Series–6/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series 10 1000 TA=-25°C IC/IB = 10 25°C 1 VCE = 10 V hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN2213T1 75°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 80 10 1 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0 25°C 75°C TA=-25°C 10 1 0.1 0.01 0.2 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25°C 0.8 100 IC, COLLECTOR CURRENT (mA) 50 0.001 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 15. Output Current versus Input Voltage VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current MUN2211T1 Series–7/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series 1 300 TA=-25°C IC/IB = 10 25°C 0.1 75°C 0.01 TA=75°C VCE = 10 250 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN2214T1 25°C 200 -25°C 150 100 50 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC 100 75°C 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 19. Output Capacitance 10 VO= 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 45 50 25°C TA=-25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage TA=-25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current MUN2211T1 Series–8/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 TA = –25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN2236T1 25°C 75°C 0.1 75°C 25°C 100 0.01 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 TA = –25°C 10 40 10 1 IC, COLLECTOR CURRENT (mA) 0.1 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 100 4.5 IC, COLLECTOR CURRENT (mA) 5 f = 1 MHz lE = 0 V TA = 25°C 4 3.5 3 2.5 2 1.5 1 0.5 0 75°C TA = –25°C 10 25°C 1 VO = 5 V 0.1 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 24. Output Capacitance 45 0 5 10 15 20 25 30 Vin, INPUT VOLTAGE (VOLTS) 35 40 Figure 25. Output Current versus Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 25°C TA = –25°C 75°C 10 1 0.1 0 5 15 25 10 20 IC, COLLECTOR CURRENT (mA) 30 35 Figure 26. Input Voltage versus Output Current MUN2211T1 Series–9/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN2237T1 TA = –25°C 25°C 75°C 0.1 0.01 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 10 IC, COLLECTOR CURRENT (mA) 1 Figure 27. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 1.6 1.4 1.2 1 0.8 0.6 f = 1 MHz lE = 0 V TA = 25°C 75°C TA = –25°C 10 25°C 1 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 29. Output Capacitance 45 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) 14 16 Figure 30. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.8 0.2 0 100 Figure 28. DC Current Gain 2 0.4 25°C 10 1 40 TA = –25°C 100 VO = 0.2 V TA = –25°C 25°C 75°C 10 1 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 40 Figure 31. Input Voltage versus Output Current MUN2211T1 Series–10/11 LESHAN RADIO COMPANY, LTD. MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM µP OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source MUN2211T1 Series–11/11