Smart Low Side Power Switch Power HITFET BTS 134D Features Product Summary · Logic Level Input Drain source voltage VDS 42 V · Input Protection (ESD) On-state resistance RDS(on) 50 mW · Thermal shutdown with auto restart Nominal load current ID(Nom) 3.5 A • Green product (RoHS compliant) Clamping energy EAS 3 J · Overload protection · Short circuit protection · Overvoltage protection · Current limitation P / PG-TO252-3-11 · Analog driving possible Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded protection functions. Vbb M HITFET â Drain Current Limitation In Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Pin 1 ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Complete product spectrum and additional information http://www.infineon.com/hitfet Datasheet 1 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 134D Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Drain source voltage VDS 42 Supply voltage for full short circuit protection Vbb(SC) 42 Continuous input voltage1) VIN Continuous input current2) IIN -0.2V £ VIN £ 10V Value Unit V -0.2 2) ... +10 mA self limited VIN < -0.2V or VIN > 10V | IIN | £ 2 Operating temperature Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation 5) Ptot °C W TC = 85 °C 43 6cm 2 cooling area , TA = 85 °C 1.1 Unclamped single pulse inductive energy 2) EAS 3 J Load dump protection VLoadDump2)3) = VA + VS VIN = 0 and 10 V, t d = 400 ms, RI = 2 W, VLD 65 V 2 kV RL = 4.5 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Thermal resistance junction - case: R thJC SMD: junction - ambient R thJA 1.5 K/W @ min. footprint 115 @ 6 cm 2 cooling area 4) 55 1For input voltages beyond these limits I has to be limited. IN 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 5not subject to production test, calculated by R thJA and Rds(on) Datasheet 2 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 134D Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Characteristics VDS(AZ) Drain source clamp voltage Values Unit min. typ. max. 42 - 55 V Tj = - 40 ...+ 150, ID = 10 mA IDSS Off-state drain current Tj = -40...+85 °C, V DS = 32 V , VIN = 0 V Tj = 150 °C µA - 1.5 8 - 5 15 VIN(th) Input threshold voltage ID = 1.4 mA, T j = 25 °C ID = 1.4 mA, T j = 150 °C On state input current IIN(on) On-state resistance R DS(on) V 1.3 1.7 2.2 0.8 - - - 10 30 µA mW VIN = 5 V, ID = 3 A, Tj = 25 °C - 45 60 VIN = 5 V, ID = 3 A, Tj = 150 °C - 75 100 - 35 50 - 65 90 R DS(on) On-state resistance VIN = 10 V, I D = 3 A, T j = 25 °C VIN = 10 V, I D = 3 A, T j = 150 °C Nominal load current 5) ID(Nom) 3.5 4.6 - Tj < 150°C, V IN = 10 V, TA = 85 °C, SMD 1) Nominal load current 5) ID(ISO) 7.1 10 - VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C Current limit (active if VDS>2.5 V)2) ID(lim) 18 24 30 A VIN = 10 V, VDS = 12 V, t m = 200 µs 1@ 6 cm2 cooling area 2Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condit and a short circuit occurs, these values might be exceeded for max. 50 µs. 5not subject to production test, calculated by R thJA and Rds(on) Datasheet 3 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 134D Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. ton - 60 100 toff - 60 100 -dVDS/dt on - 0.3 1.5 dVDS/dtoff - 0.7 1.5 150 175 - °C K Dynamic Characteristics Turn-on time VIN to 90% ID : µs RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: Turn-off time RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: V/µs RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Tjt Thermal hysteresis 2) DT jt - 10 - Input current protection mode IIN(Prot) - 130 300 EAS 3 - - J VSD - 1.0 1.5 V µA Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 3 A, Tj = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage IF = 15 A, tm = 250 µs, V IN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Datasheet 4 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 134D Block diagram Inductive and overvoltage output clamp Terms RL V 2 I IN 1 D Z D IN ID VDS Vbb HITFET S S 3 VIN HITFET Short circuit behaviour Input circuit (ESD protection) Gate Drive Input VIN Source/ Ground IIN IDS Tj Datasheet 5 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 134D 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TC) resp. R ON=f(Tj); ID =3A; VIN=10V Ptot = f(TA) @ R thJA=55 K/W 3 100 mW max. W Rthjc = 1.5 K/W RDS(on) 80 Ptot 2 SMD @ 6cm2 1.5 70 typ. 60 50 40 1 30 20 0.5 10 0 -50 -25 0 25 50 75 100 °C 0 -50 150 -25 0 25 50 75 100 125 °C TA;TC 3 On-state resistance 4 Typ. input threshold voltage R ON=f(Tj); I D=3A; VIN=5V VIN(th) = f(Tj); ID = 0.7 mA; V DS = 12V 2 110 mW V max. 90 1.6 80 VGS(th) RDS(on) 175 Tj typ. 70 1.4 1.2 60 1 50 0.8 40 0.6 30 20 0.4 10 0.2 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Tj Datasheet -25 0 25 50 75 100 °C 150 Tj 6 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 134D 5 Typ. transfer characteristics 6 Typ. short circuit current I D=f(V IN); VDS=12V; T Jstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: V IN 30 A A ID(SC) 30 ID 20 20 Vin=10V 15 15 10 10 5 5 0 0 1 2 3 4 5 6 7 8 V 0 -50 10 5V -25 0 25 50 75 VIN 100 125 °C 175 Tj 7 Typ. output characteristics 8 Off-state drain current I D=f(V DS); T Jstart=25°C Parameter: V IN IDSS = f(T j) 35 16 max. µA A 10V 7V 12 IDSS 25 ID 6V 10 5V 20 4V 8 15 6 typ. 10 Vin=3V 4 5 0 0 2 1 2 3 4 V 0 -40 6 VDS Datasheet -15 10 35 60 85 110 135 °C 185 Tj 7 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 134D 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 40 2 K/W A D=0.5 -40°C 10 1 0.2 0.1 ZthJA ID(lim) 30 25°C 25 0.05 10 0 0.02 0.01 20 85°C 10 -1 10 -2 15 10 150°C 5 0 0 Single pulse 10 1 2 ms 3 5 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 3 tp t 11 Determination of ID(lim) ID(lim) = f(t); t m = 200µs Parameter: TJstart 40 A ID(lim) 30 -40°C 25 25°C 20 85°C 15 150°C 10 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Datasheet 8 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 134D Package Outlines Package Outlines 6.5 +0.15 -0.05 A 0.15 MAX. per side B (5) 0.5 +0.08 -0.04 0.9 +0.20 -0.01 0...0.15 0.8 ±0.15 (4.24) 1 ±0.1 9.98 ±0.5 6.22 -0.2 5.4 ±0.1 2.3 +0.05 -0.10 0.51 MIN. 1 3x 0.75 ±0.1 0.5 +0.08 -0.04 2.28 4.57 0.1 B 0.25 M A B All metal surfaces tin plated, except area of cut. GPT09277 Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 134D Revision History 2 Revision History Version Rev. 1.3 Date Changes 2006-12-22 released automotive green and robust version (BTS) Package parameter (humidity and climatic) removed in Maximum ratings Rev. 1.2 2006-12-11 AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2006-08-08 released non automotive green version (ITS) Rev. 1.0 2004-03-05 released production version Datasheet 10 Rev. 1.3, 2006-12-22 Edition 2006-12-22 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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