OPA5930UYO Ultra Yellow LED Chip Ultra Bright GaAs/AlGaInP 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaInP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Max 2.2 2.4 V IF=20mA 100 uA VR=5V mcd IF=20mA nm IF=20mA IR Reverse Current B C D E F G Iv Brightness Typ 90 110 130 140 140 140 λd Wavelength Unit Condition 120 140 160 180 200 200 590 ∆λ 20 nm IF=20mA ※ Note : Luminous Intensity is measured on bare chips. 4. Mechanical Data (a) Emission Area -------------------------- 11mil x 11mil (b) Bottom Area -------------------------- 12mil x 12mil (c) Bonding Pad -------------------------- 100um (d) Chip Thickness -------------------------7mil (b) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr AlGaInP Epi (a) Substrate (d) (c) N Side Electrode