BRIGHT LED ELECTRONICS CORP. BIR-BO13J4G SINCE 1981 END-LOOK PACKAGE LIGHT EMITTING DIODE z Package Dimensions: 5.0(.197) z Features: 1. High radiant power and high radiant intensity. 2. Standard T-1 3/4(5mm)package. 8.62(.339) 1.0(.039) 3. Peak wavelength λp=850nm. 4. Good spectral matching to si-photodetector. 1.5(.059) 5. Radiant angle: 20° MAX. 6. Lens Appearance: Water Clear. 5.7(.224) 23.4(.921) MIN. 0.5(.020) SQ.TYP. Anode Cathode 7. This product doesn't contain restriction substance, comply ROHS standard 2.54(.100) 1.00(.039) MIN. NOM. z NOTES: Applications: 1. Remote Control. 1.All dimensions are in millimeters (inches). 2.Tolerance is ±0.25mm (0.01”) unless otherwise specified. 3.Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. 2. Automatic Control System. z Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Rating Unit Power Dissipation Pd 100 mW Continuous Forward Current IF 100 mA IFP 1.0 A VR 5 V Operating Temperature Topr -45℃~85℃ - Storage Temperature Tstg -45℃~100℃ - Soldering Temperature Tsol 260℃(for 5 seconds) - Peak Forward Current *1 Reverse Voltage *1 Condition for is IFP pulse of 1/10 duty and 0.1 msec width. Rev:2.1 Page1 Page1 of of 3 2 BRIGHT LED ELECTRONICS CORP. BIR-BO13J4G SINCE 1981 z Optical- Electrical Characteristics (@TA=25℃) Parameter Symbol Test Conditions Min TYP Max Unit Radiant Intensity Ie IF=50mA 45.31 128.5 - mW/sr Forward Voltage VF IF=50mA - 1.5 1.8 V Reverse Current IR VR=5V - - 10 µA Peak Wavelength λp IF=20mA - 850 - nm Spectral Line Half- Width ∆λ IF=20mA - 50 - nm Viewing Angle 2θ1/2 IF=20mA - 20 - deg z Typical Optical-Electrical Characteristic Curves Fig.2 Forward Current Vs Ambient Temperature Fig.1 Spectral Dlstrbution 120 Forward Current IF (mA) Relative Radiant Intensity 1.0 0.5 0 750 100 80 20 0 -40 Output Power To Value @50mA 80 60 40 20 1.0 2.0 0 20 40 60 80 100 Fig.4 Relative Radiant Intensity Vs Ambient Tembeb Ature Fig.3 Forward Current Vs 0 -20 Ambient Temperature (nm) (mA) 100 Forward Current 40 950 850 Wavelength 0 60 3.0 4.0 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 (V) Forward Voltage -20 0 20 40 60 Ambient Temperature Fig.5 Relative Radiant Intensity Vs Forward Current (°C) Fig.6 Radiation Diagram 0 10 20 4.0 Relative Radiant Intensity Output Power Relative To Value At @ 50mA 30 3.0 2.0 1.0 0 0 20 40 60 Forward Current 80 100 1.0 40 0.9 50 0.8 60 70 0.7 80 90 0.5 0.3 0.1 0.2 0.4 0.6 (mA) Rev:2.1 Page2 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BO13J4G z Tapping and packaging specifications(Units: mm) z Packaging Bag Dimensions Notes: 1、500pcs per bag, 5Kpcs per box. 2、All dimensions are in millimeters(inches). 3、Specifications are subject to change without notice. Rev:2.1 Page3 of 3 BRIGHT LED ELECTRONICS CORP. BIR-BO13J4G SINCE 1981 Infrared Emitting Diode Specification Commodity: Infrared emitting diode Intensity Bin Limits (At 50mA) BIN CODE Min.(mW/sr) Max.( (mW/sr) 15 32.36 61.30 16 45.31 85.82 17 63.43 120.15 18 88.80 168.21