FAST RECOVERY DIODE AFF150A INSULATED MODULE Repetitive voltage up to *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request Mean on-state current 150 A Surge current 2,5 kA 3300 V FINAL SPECIFICATION apr 17 - ISSUE : 1 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 3300 V V RSM Non-repetitive peak reverse voltage 125 3400 V I RRM Repetitive peak reverse current 125 50 mA CONDUCTING I F (AV) Mean on-state current 180° sin, 50Hz, Tc=55°C I F (AV) Mean on-state current 180° sin. 50Hz, Tc=70°C I FSM Surge on-state current sine wave, 10 ms I² t I² t without reverse voltage V F On-state voltage On-state current = V F(TO) Threshold voltage F On-state slope resistance r Q rr Reverse recovery charge I rr Peak reverse recovery current t rr Reverse recovery time IF= di/dt= VR = 150,1 125 100 A A 129,1 A 2,5 kA 31 x1E3 A²s 125 0 V 125 1,70 V 125 7,400 mohm 200 A 125 175 µC 100 A/µs 50 V 125 155 A 125 2,2 µs 105 °C/kW MOUNTING R th(j-c) Thermal impedance Junction to case, per element R th(c-h) Thermal impedance Case to heatsink, per element T j Operating junction temperature V ins RMS insulation voltage 50Hz, circuit to base,all terminal shorted Mounting tourque Case to heatsink Busbars to terminals T Mass ORDERING INFORMATION : AFF150A S 33 standard specification VRRM/100 25 20 °C/kW -30 / 125 °C 4500 V 4 to 6 12 to 18 1500 Nm Nm g (*) 6000V available on request. Add HVI to the desired code in phase of order, i.e. AFF230HVIS26 Thermal impedance FAST DIODE MODULE FINAL SPECIFICATION apr 17 - ISSUE : 1 SWITCHING CHARACTERISTICS FORWARD RECOVERY VOLTAGE 160 Tj =125 °C 140 120 VFR [V] 100 80 IF VFR 60 40 VF 20 0 0 200 400 600 800 1000 1200 di/dt [A/µs] REVERSE RECOVERY CHARGE Tj = 125 °C REVERSE RECOVERY CURRENT Tj = 125 °C 400 400 200 A 350 300 300 250 250 200 200 Irr [A] Qrr [µC] 350 150 150 100 100 50 50 0 0 100 200 300 400 200 A 0 0 100 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta 200 300 400 di/dt [A/µs] IF d i/d t ta tb Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr AFF150A FAST RECOVERY DIODE FINAL SPECIFICATION apr 17 - ISSUE : 1 SURGE CHARACTERISTIC Tj = 125 °C 300 3 250 2,5 200 2 ITSM [kA] On-state Current [A] ON-STATE CHARACTERISTIC Tj = 125 °C 150 1,5 100 1 50 0,5 0 0,75 0 1,25 1,75 2,25 2,75 3,25 3,75 1 On-state Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE 120,0 Zth j-c [°C/kW] 100,0 80,0 60,0 40,0 20,0 0,0 0,001 0,1 10 t[s] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. Distributed by 100