Advance Technical Information IXGN82N120C3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE(sat) = 1200V = 58A ≤£ 3.9V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 IF110 ICM TC TC TC TC 130 58 42 500 A A A A SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 164 A (RBSOA) Clamped Inductive Load PC TC = 25°C = 25°C = 110°C = 110°C = 25°C, 1ms W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ Md 50/60Hz IISOL ≤ 1mA G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VCE ≤ VCES 595 VISOL Ec t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight Features z z z z z z Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES, VGE = 0V, Note 1 IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 1mA, VCE = VGE 5.0 = 82A, VGE = 15V, Note 2 © 2009 IXYS CORPORATION, All Rights Reserved V ±200 nA 3.3 3.9 High Power Density Low Gate Drive Requirement Applications 50 μA 6 mA TJ = 125°C Optimized for Low Switching Losses Square RBSOA High Current Capability Isolation Voltage 2500 V~ Anti-Parallel Ultra Fast Diode International Standard Package V z z z z z z Power Inverters UPS SMPS PFC Circuits Welding Machines Lamp Ballasts DS100171(7/09) IXGN82N120C3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 2 38 Cies Coes SOT-227B miniBLOC (IXGN) 62 S 7900 pF 685 pF 197 pF VCE = 25V, VGE = 0V, f = 1 MHz Cres 340 nC 55 nC Qgc 145 nC td(on) 30 ns Qg(on) Qge tri IC = 82A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C 77 ns Eon IC = 82A, VGE = 15V 5.0 mJ td(off) VCE = 0.5 • VCES, RG = 2Ω 194 ns Note 3 100 ns tfi Eoff td(on) tri Eon td(off) tfi 2.5 Inductive load, TJ = 125°C IC = 82A, VGE = 15V VCE = 0.5 • VCES, RG = 2Ω Note 3 Eoff 5.0 mJ 32 ns 80 ns 6.8 mJ 230 ns 270 ns 4.0 mJ 0.21 °C/W RthJC RthCK 0.05 °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 60A, VGE = 0V, Note 1 IRM trr Characteristic Values Min. Typ. Max. TJ = 150°C IF = 60A, VGE = 0V, -diF/dt = 200A/μs, VR = 300V 1.4 2.5 1.8 V V 8.3 A 140 ns TJ = 100°C RthJC 0.42 °C/W Notes: 1. Part must be heatsunk for high-temp Ices measurement. 2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2