MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES A L COLLECTOR Epitaxial Planar Die Construction 3 3 3 Complementary PNP Type Available (MMBT2907A) Top View 1 Ideal for Medium Power Amplification and Switching 1 B S 1 2 2 BASE V G 2 EMITTER C H D J K MAXIMUM RATINGS Rating Collector – Emitter Voltage Symbol 2222 2222A Unit VCEO 30 40 Vdc Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 Collector – Base Voltage VCBO 60 75 Vdc Emitter – Base Voltage VEBO 5.0 6.0 Vdc Collector Current — Continuous SOT-23 IC 600 mAdc Symbol Max Unit PD 225 mW J 0.085 0.177 1.8 mW/°C K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C All Dimension in mm DEVICE MARKING MMBT2222 = M1B; MMBT2222A = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 40 — — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 75 — — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.0 — — Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX — 10 nAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222 MMBT2222A MMBT2222 MMBT2222A ICBO — — — — 0.01 0.01 10 10 µAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO — 100 nAdc MMBT2222A IBL — 20 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) 1. FR±5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A REM : Thermal Clad is a trademark of the Bergquist Company. Any changing of specification will not be informed individual Page 1 of 5 MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 35 50 75 35 100 50 30 40 — — — — 300 — — — MMBT2222 MMBT2222A — — 0.4 0.3 MMBT2222 MMBT2222A — — 1.6 1.0 MMBT2222 MMBT2222A — 0.6 1.3 1.2 MMBT2222 MMBT2222A — — 2.6 2.0 250 300 — — — 8.0 — — 30 25 2.0 0.25 8.0 1.25 — — 8.0 4.0 50 75 300 375 5.0 25 35 200 — 150 — 4.0 Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc) (3) (IC = 150 mAdc, VCE = 1.0 Vdc) (3) (IC = 500 mAdc, VCE = 10 Vdc) (3) hFE MMBT2222A only MMBT2222 MMBT2222A Collector – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) — VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (4) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MMBT2222 MMBT2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) pF Cibo MMBT2222 MMBT2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MMBT2222A pF hie kΩ X 10– 4 hre hfe — mmhos hoe rb, Cc ps NF dB SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time v ((VCC = 30 Vdc,, VBE(off) = – 0.5 Vdc,, IC = 150 mAdc, IB1 = 15 mAdc) td — 10 tr — 25 ((VCC = 30 Vdc,, IC = 150 mAdc,, IB1 = IB2 = 15 mAdc) ts — 225 tf — 60 v ns ns 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 5 MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 µs, Duty Cycle ≈ 2.0% +16 V 0 –2 V 200 1.0 to 100 µs, Duty Cycle ≈ 2.0% +16 V 200 0 1 kΩ CS* < 10 pF < 2 ns 1k –14 V < 20 ns CS* < 10 pF 1N914 –4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 700 500 hFE , DC Current Gain 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 200 5.0 10 300 500 700 1.0 k Figure 3. DC Current Gain VCE , Collector–Emitter Voltage (V) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 I B, Base Current (mA) 2.0 3.0 20 30 50 Figure 4. Collector Saturation Region http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 5 MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts – 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 5.0 7.0 10 20 Figure 5. Turn – On Time IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 300 500 6.0 f = 1.0 kHz 8.0 NF, Noise Figure (dB) NF, Noise Figure (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 2.0 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 50 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, Frequency (kHz) RS, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain Bandwidth Products (MHz) 500 20 Ceb Capacitance (pF) 200 10 8.0 10 7.0 5.0 Ccb 3.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Voltage (V) Figure 9. Capacitances http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 30 50 70 100 I C, Collector Current (mA) Figure 6. Turn – Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, Time (ns) t, Time (ns) 100 70 50 20 30 50 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 Figure 10. Current–Gain Bandwidth Product Any changing of specification will not be informed individual Page 4 of 5 MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor 1.0 +0.5 TJ = 25°C 0 0.8 Coefficient (mV/ °C) V, Voltage (V) VBE(sat) @ IC/IB = 10 1.0 V 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) – 0.5 – 1.0 – 1.5 RqVB for VBE – 2.0 VCE(sat) @ IC/IB = 10 0 – 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, Collect Current (mA) Figure 11. “On” Voltages http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C, Collect Current (mA) 500 Figure 12. Temperature Coefficients Any changing of specification will not be informed individual Page 5 of 5