NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Allowable Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1 For PNP device (NTE2364), voltage and current values are negative. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 50V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 0.1 µA DC Current Gain Gain Bandwidth Product hFE (1) VCE = 2V, IC = 100mA 200 – 400 hFE (2) VCE = 2V, IC = 1.5A 40 – – VCE = 10V, IC = 50mA – 150 – fT MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit – 12 – pF – 22 – pF – 0.15 0.4 V – 0.3 0.7 V – 0.9 1.2 V 60 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 50 – – V Emitter–Base Breakdown Voltage 6 – – V Output Capacitance NTE2363 cob Test Conditions VCB = 10V, f = 1MHz NTE2364 Collector–Emitter Saturation Voltage NTE2363 VCE(sat) IC = 1A, IB = 50mA NTE2364 Base–Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 50mA Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 V(BR)EBO IE = 10µA, IC = 0 .343 (8.73) Max .492 (12.5) Min .024 (0.62) Max E C B .102 (2.6) Max .059 (1.5) Typ .018 (0.48) .118 (3.0) Max .236 (6.0)Dia Max .197 (5.0) .102 (2.6) Max