EMH1303 Ordering number : ENA0661 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH1303 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --12 V ±10 V --7 A ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --28 A Allowable Power Dissipation PD Mounted on a ceramic board (1200mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Symbol V(BR)DSS IDSS1 Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --12 V VDS=--8V, VGS=0V --1 IDSS2 IGSS VDS=--12V, VGS=0V VGS=±8V, VDS=0V Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=--6V, ID=--3A ID=--6A, VGS=--4.5V 18 23 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--6A, VGS=--2.5V 27 36 mΩ ID=--0.5A, VGS=--1.8V 40 65 mΩ Gate-to-Source Leakage Current Marking : JC --10 µA µA µA ±10 --0.4 7.2 --1.2 12 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2407PE TI IM TC-00000967 No. A0661-1/4 EMH1303 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Ratings Conditions min typ VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz Unit max 1100 pF 350 pF Reverse Transfer Capacitance Crss 265 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 11 ns See specified Test Circuit. 165 ns td(off) tf See specified Test Circuit. 100 ns See specified Test Circuit. 105 ns 12.0 nC 1.9 nC --0.8 Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--7A VDS=--6V, VGS=--4.5V, ID=--7A VDS=--6V, VGS=--4.5V, ID=--7A Diode Forward Voltage VSD IS=--7A, VGS=0V Package Dimensions 8 7 6 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 4 0.5 2.1 0.2 1.7 5 1 V 5 0.125 0.2 0.2 nC --1.2 Electrical Connection unit : mm (typ) 7045-001 8 2.9 1 2.0 2 3 4 Top view 0.05 0.75 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : EMH8 Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2Ω VOUT VIN D PW=10µs D.C.≤1% G EMH1303 P.G 50Ω S No. A0661-2/4 EMH1303 ID -- VDS VDS= --6V --9 --5 --4 --3 25° --2 --1 --25°C --2 --6 C --3 --7 °C .5V V GS= --1 Ta=7 5 Drain Current, ID -- A --8 --6. --4.5V 0V --4 ID -- VGS --10 --1.8 V --8.0V --5 Drain Current, ID -- A --2.5 --4.0V V --6 --1 0 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --6A 40 30 20 10 0 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V = Ta 3 2 5°C --2 °C 25 C 5° 7 1.0 7 5 2 A I = --6 --2.5V, D = V GS = --6A 4.5V, I D V GS= -- 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT12939 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 IT12940 0 7 5 --0.4 --0.6 --0.8 --1.0 --1.2 IT12941 Ciss, Coss, Crss -- VDS 5 VDD= --6V VGS= --4.5V 1000 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 2 f=1MHz 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 40 --0.01 7 5 3 2 3 0.1 --0.01 --0.5 V, I D= --1.8 V GS= --10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 7 5 A 50 Ambient Temperature, Ta -- °C 2 10 --2.5 IT12937 60 IT12938 VDS= --6V 3 --2.0 70 0 --60 --8 ⏐yfs⏐ -- ID 5 --1.5 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C ID= --0.5A --0.5 IT12936 70 50 0 --1.0 RDS(on) -- VGS 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.9 5°C 25°C --25° C --0.1 Ta= 7 0 3 2 tf td(off) 100 7 5 tr 3 Ciss 1000 7 5 Coss 3 Crss 2 2 td(on) 10 7 5 --0.01 100 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT12942 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12943 No. A0661-3/4 EMH1303 VGS -- Qg 7 5 3 2 VDS= --6V ID= --7A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Total Gate Charge, Qg -- nC IT12944 PD -- Ta 1.6 Allowable Power Dissipation, PD -- W 13 --10 7 5 3 2 ASO ID= --7A DC 10 op 0m era s tio n( --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10µs 10 0 1m µs 10 s ms IDP= --28A Operation in this area is limited by RDS(on). Ta = 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT13034 1.5 1.4 M ou nt 1.2 ed on 1.0 ac er am ic 0.8 bo ar d (1 20 0.6 0m m2 ✕ 0.4 0. 8m m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12946 Note on usage : Since the EMH1303 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2007. Specifications and information herein are subject to change without notice. PS No. A0661-4/4