Kexin BAT64-04 Silicon schottky diode Datasheet

Diodes
SMD Type
Silicon Schottky Diodes
BAT64 series
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
0.55
For low-loss,fast-recovery, meter protection
bias isolation and clamping applications
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Integrated diffused guard ring
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low forward current
1.Base
2.Emitter
3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
S ym b o l
M ax
U n it
D io d e re ve rs e vo lta g e
VR
40
V
F o rw a rd c u rre n t
IF
250
mA
A ve ra g e fo rw a rd c u rre n t (5 0 /6 0 H z,s in u s )
S u rg e fo rw a rd c u rre n t
10 m s)
(t
IF A V
120
mA
IF S M
800
mA
P to t
250
mW
T o ta l p o w e r d is s ip a tio n T s = 6 1
J u n c tio n te m p e ra tu re
S to ra g e te m p e ra tu re
Tj
150
T stg
-5 5 to + 1 5 0
J u n c tio n a m b ie n t (N o te 1 )
R th
JA
495
KW
J u n c tio n s o ld e rin g p o in t
R th
JS
355
KW
N o te
1 . P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m
40 m m m
1 .5 m m /0 .5 c m 2 C u
Electrical Characteristics Ta = 25
Param eter
Reverse current
Sym bol
IR
Forward voltage
Conditions
Typ
Max
V R = 25 V,T A = 25
2
V R = 25 V,T A = 85
200
CT
Unit
A
IF = 1 m A
320
350
mV
I F = 10 m A
385
430
V
I F = 30 m A
440
520
V
I F = 100 m A
570
750
V
V R = 1 V,f = 1 MHz
4
6
pF
VF
Diode capacitance
Min
Marking
Type
BAT64
BAT64-04
BAT64-05
BAT64-06
Marking
63s
64s
65s
66s
www.kexin.com.cn
1
Similar pages