ICs for Mobile Communication AN6096FHN Transmission and reception IC for cellular telephone ■ Overview Unit: mm The AN6096FHN is a transmission and reception IC for a cellular telephone. It is encapsulated in the QFN package which is very thin and very small outline by using our exclusive process method. It integrates QPSK (Quadrature phase shift keying) modulator for transmission and an IF circuit for reception in a single chip. It contributes to realization of thinner and lighter equipment by adopting a very small package and designing a low power consumption circuit. A 0. C 312 24 8 0.2±0.1 R0.3 0.10 S Seating plane • Integrating an orthogonal modulation circuit for transmission and an IF circuit for reception on a single chip • Low power consumption by using an indirect modulation system in transmission block • Built-in APC circuit for transmission output adjustment • High input sensitivity by optimizing circuit in reception circuit • Built-in RSSI circuit of wide dynamic range in reception block 20 12 8 B 24 7 0.80max. 7 ■ Features , ,, 19 2.0±0.2 20 1 , , 13 3.0±0.1 13 4.0±0.1 4.2±0.2 19 3.0±0.2 4.0±0.1 (1.10) (1.10) 5 5.2±0.2 5.0±0.1 1 0.50 0.2±0.1 0.10 M S A B S QFN024-P-0405 Q-IN Q-IN I-IN 20 IO LMDEC1 13 LMDEC2 14 LMIN 15 GNDOUT 16 TXOUT 17 19 ■ Block Diagram 18 VCCMOD • Cellular telephone VCCOUT ■ Applications IO 12 21 IO 22 11 10 MXOUT VCCMIX RXMXIN RSSI 9 24 8 RXLOIN 7 RSOUT VCCLIM 6 LMOUT 5 GNDRX 4 TXLO2R 3 TXLO2 GNDMOD 2 IO 1 APC/BS 23 TXLO1 I-IN 1 AN6096FHN ICs for Mobile Communication ■ Pin Descriptions Pin No. Symbol 1 TXLO1 2 GNDMOD 3 TXLO2 4 Description Pin No. Symbol Description TX local 1-in 13 LMDEC1 Lim. decouple 1 GND TX-mod. 14 LMDEC2 Lim. decouple 2 TX local 2 15 LIMIN TXLO2R TX local 2-ref. 16 GNDOUT 5 GNDRX GND-RX 17 TXOUT 6 LMOUT Lim. out 18 VCCOUT VCC TX-out 7 VCCLIM VCC lim. 19 VCCMOD VCC TX-mod. 8 RSOUT RSSI out 20 Q-IN Q input 9 RXLOIN RX local-in 21 Q-IN Q input 10 RXMXIN RX mix.-in 22 I-IN I input 11 VCCMIX VCC mix. 23 I-IN I input 12 MXOUT Mix. out 24 APC / BS Lim. in GND TX-out TX-output APC / BS ■ Absolute Maximum Ratings Parameter Symbol Rating Unit VCC 4.2 V ICC 60 mA PD 125 mW Topr −30 to +80 °C Tstg −55 to +125 °C Supply voltage Supply current Power dissipation *2 Operating ambient temperature Storage temperature *1 *1 Note) *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C. *2: The power dissipation shown is for the independent IC without a heat sink at Ta = 80°C. Refer to "■ Application Notes". ■ Recommended Operating Range Parameter Supply voltage 2 Symbol Range Unit VCC 2.7 to 4.0 V ICs for Mobile Communication AN6096FHN ■ Electrical Characteristics at Ta = 25°C Parameter Consumption current (Transmission) Symbol *1 Sleep current *1 Conditions Min Typ Max Unit ICCTX Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 2.3 V 25 33 mA ISLTX No signal, VAPC/BS = 0 V 0 10 µA *1 PO1 Lo1 = 178 MHz, −25 dBm Lo2 = 1 607 MHz, −20 dBm VAPC = 2.3 V −16 −13 dBm Output level 2 *1 PO2 Lo1 = 178 MHz, −25 dBm Lo2 = 1 631 MHz, −20 dBm VAPC = 2.3 V −16 −13 dBm Minimum output level *1 Pmin Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 1.0 V −50 −43 dBm No signal 3.2 4.5 mA GMX VM1 = 60 dBµ, SW1 = b Filter loss: except for −5.5 dB 21 23.5 26 dB Mix. maximum output amplitude *2 VMX VM1 = 105 dBµ, SW1 = b Filter loss: except for −5.5 dB 101 107 dBµ Lim. voltage gain *2 GLM VL1 = 15 dBµ 80 85 90 dB VLM VL1 = 80 dBµ, 400 kHz component 0.90 1.25 1.60 V[p-p] VS1 VL1 = 0 dBµ 0 0.23 0.6 V VS2 VL1 = 115 dBµ 2.31 2.6 2.91 V DS VS (VIS) = VS1 + 0.12 V DS = VS (VIS + 75 dBµ) − V(VIS) 1.39 1.8 2.19 V Output level 1 Consumption current (Reception) *2 ICCRX Mix. conversion gain *2 Lim. maximum output amplitude RSSI output voltage 1 *2 RSSI output voltage 2 *2 RSSI reference output inclination *2 *3 RSSI output inclination variation 1 *3 ∆DS1 ∆DS1 = 5{VS (VIS + 15 dBµ) − VS (VIS)}/ DS 0.75 1 1.25 RSSI output inclination variation 2 *3 ∆DS2 ∆DS2 = 5{VS (VIS + 30 dBµ) − VS (VIS + 15 dBµ)}/ DS 0.75 1 1.25 RSSI output inclination variation 3 *3 ∆DS3 ∆DS3 = 5{VS (VIS + 45 dBµ) − VS (VIS + 30 dBµ)}/ DS 0.75 1 1.25 RSSI output inclination variation 4 *3 ∆DS4 ∆DS4 = 5{VS (VIS + 60 dBµ) − VS (VIS + 45 dBµ)}/ DS 0.75 1 1.25 RSSI output inclination variation 5 *3 ∆DS5 ∆DS5 = 5{VS (VIS + 75 dBµ) − VS (VIS + 60 dBµ)}/ DS 0.75 1 1.25 Note) *1: VCC = 3.0 V, IQ signal amplitude: 0.35 V[p-p] (single phase), DC bias: 1.6 V, π/4 QPSK modulation wave Output frequency of PO1: 1 429.002 5 MHz, Output frequency of PO2: 1 453.002 5 MHz, Output frequency of Pmin: 1 441.002 5 MHz Lo input level is a setting value of signal source (output impedance 50 Ω). *2: VCC2 = 3.0 V, SW1 = a, VLO3 = 90 dBµ: f = 129.6 MHz, VM1: f = 130 MHz, VL1: f = 400 kHz (input level of pin 15 excluding the attenuation by matching circuit and filter.) VMX and VLM are measured in high impedance unless otherwise specified. Lo input level is a setting value of signal source (output impedance 50 Ω). *3: VIS is the input level of which the RSSI output voltage becomes VS1 + 0.12 V. 3 AN6096FHN ICs for Mobile Communication ■ Electrical Characteristics at Ta = 25°C (continued) • Design reference data Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. VCC1 = 3.0 V unless otherwise specified. Lo input level is a setting value of signal source (output impedance 50 Ω). Parameter Conditions Min Typ Max Unit Carrier leak suppression amount (fLO2 − fLO1) CL Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 2.3 V IO: DC offset adjustment −35 dBc Image leak suppression amount IL Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 2.3 V, IO: level adjustment −35 dBc Near spurious suppression amount DU Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 2.3 V −70 −65 dBc Base band distortion suppression amount BD Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 2.3 V −40 dBc Adjacent channel leakage power suppression amount (30 kHz detuning) BL1 Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 2.3 V −45 −38 dBc Adjacent channel leakage power suppression amount (50 kHz detuning) BL2 Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 2.3 V −70 −60 dBc Adjacent channel leakage power suppression amount (100 kHz detuning) BL3 Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 2.3 V −65 dBc APC variable width LAPC Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 1.0 V to 2.3 V 30 37 dB APC output level control sensitivity SAPC Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 1.0 V / 1.6 V 46 dB/V −1.5 +1.5 dB 2.0 %rms In-band output level deviation Modulation precision 4 Symbol ∆P EVM Lo1 = 178 MHz, −25 dBm Lo2 = 1 607 MHz to 1 631 MHz, −20 dBm VAPC = 2.3 V Lo1 = 178 MHz, −25 dBm Lo2 = 1 619 MHz, −20 dBm VAPC = 2.3 V ICs for Mobile Communication AN6096FHN ■ Application Notes • PD Ta curves of QFN024-P-0405 PD T a 0.700 0.660 Power dissipation PD (W) 0.600 Mounted on the standard printed circuit board (Glass epoxy:50 × 50 × t0.8 mm3) Rth(j−a) = 151.5°C/W 0.500 0.500 0.300 0.279 Independent IC without a heat sink Rth(j−a) = 357.4°C/W 0.200 0.100 0 0 25 50 75 100 125 Ambient temperature Ta (°C) • Main characteristics Note) Test conditions are the same as "■ Electrical Characteristics" unless otherwise specified. The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Output level PO (dBm) −20 −30 −40 −30°C 80°C −50 −30 ACP 30 kHz −60 −40 80°C 25°C −70 −50 −30°C −80 −30°C, 25°C ACP 50 kHz 80°C Circuit off −30°C 25°C 0 1 2 APC control voltage (V) −60 −70 −80 DU −90 3 120 80°C 110 100 Mix. output level (dBµV) VCC = 3.0 V, Ta = −30°C, 25°C, 80°C Lo1: 178 MHz −25 dBm Lo2: 1619 MHz −20 dBm I, Q: 0.35 V[p-p] PO (Single phase) 1.6 VDC , π / 4 Using PN9-step continuous wave −10 Mix. characteristics Adjacent channel leakage power suppression amount ACP 30 kHz, ACP 50 kHz (dBc) Proximity spurious suppression amount DU (dBc) APC control voltage characteristics 0 25°C 90 −30°C 80 70 60 50 40 VCC = 3.0 V Ta = −30°C, 25°C, 80°C Mix. in: 130 kHz Mix. out: 400 kHz Lo3 in: 129.6 MHz, 90 dBµV 30 20 10 0 0 20 40 60 80 100 120 Mix. input level (dBµV) 5 AN6096FHN ICs for Mobile Communication ■ Application Notes (continued) • Main characteristics (continued) Note) Test conditions are the same as "■ Electrical Characteristics" unless otherwise specified. The characteristic values below are theoretical values for designing and not guaranteed. Proximity spurious suppression RSSI characteristics 3.0 120 25°C, 80°C 2.8 −30°C 2.6 VCC = 3.0 V Ta = −30°C, 25°C, 80°C Lim. in: 400 kHz Lim. out: 400 kHz 2.4 90 80 70 60 50 40 VCC = 3.0 V Ta = −30°C, 25°C, 80°C Lim. in: 400 kHz Lim. out: 400 kHz 30 20 2.2 RSSI output voltage (V) Lim. amp. output level (dBµV) 100 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 10 0.2 0 0.0 0 20 40 60 80 100 −30°C 0 120 25°C, 80°C Q 330 pF I 0.1 µF I 330 pF IO IO 2.0 kΩ 100 nF a SW1 b 100 pF 21 IO RSSI 23 1 000 pF 11 10 22 9 8 47 Ω 100 pF VMI 1 000 pF Lo3 IO 100 pF Lo2 7 6 33 nF 1 000 pF 100 pF 1 000 pF VLM LIMOUT 5 4 47 Ω 3 47 Ω 2 1 10 pF Lo1 Matsushita Electronic Components EHF FD1623 6 120 12 24 VAPC/BS 100 VLI 400 kHz filter 2 200 pF 1.0 kΩ 80 47 Ω 14 15 nF 100 nF MIXOUT VMX 15 16 18 19 1 000 pF PO TXOUT 1 000 pF 17 100 pF 3.3 µF VCC1 20 60 Lim. amp. input level (dBµV) ■ Application Circuit Example Q 0.1 µF 40 20 Lim. amp. input level (dBµV) 13 15 nF 110 VS RSSIOUT 4.7µF VCC2