FQI13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ Features Description • 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @VGS = 10 V, ID = 6.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge ( Typ. 43 nC) • Low Crss ( Typ. 20 pF) • 100% Avalanche Tested • RoHS Compliant D G DS G I2-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) FQI13N50CTU 500 Unit V 13 A 8 A 52 A ± 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 860 IAR Avalanche Current (Note 1) 13 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 19.5 4.5 195 1.56 -55 to +150 mJ V/ns W W/°C °C 300 °C FQI13N50CTU 0.64 Unit °C/W 62.5 °C/W dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient, Max. ©2003 Fairchild Semiconductor Corporation FQI13N50C Rev. C1 1 www.fairchildsemi.com FQI13N50C — N-Channel QFET® MOSFET November 2013 Device Marking FQI13N50C Device FQI13N50CTU Electrical Characteristics Symbol Package I2-PAK Reel Size Tube Tape Width N/A Quantity 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 500 -- -- V -- 0.5 -- V/°C VDS = 500 V, VGS = 0 V -- -- 1 μA VDS = 400 V, TC = 125°C -- -- 10 μA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.5 A -- 0.39 0.48 Ω gFS Forward Transconductance VDS = 40 V, ID = 6.5 A -- 15 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1580 2055 pF -- 180 235 pF -- 20 25 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 13 A, RG = 25 Ω (Note 4) VDS = 400 V, ID = 13 A, VGS = 10 V (Note 4) -- 25 60 ns -- 100 210 ns -- 130 270 ns -- 100 210 ns -- 43 56 nC -- 7.5 -- nC -- 18.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A ISM -- -- 52 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 13 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 410 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 13 A, dIF / dt = 100 A/μs -- 4.5 -- μC NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L =6.0 mH, IAS = 13A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 13A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation FQI13N50C Rev. C1 2 www.fairchildsemi.com FQI13N50C — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μs Pulse Test -1 10 -1 10 -1 0 10 2 1 10 10 4 6 Figure 1. On-Region Characteristics 10 Figure 2. Transfer Characteristics 1.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] VGS = 10V 1.0 VGS = 20V 0.5 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0 5 10 15 20 25 30 10 35 0.2 0.4 ID, Drain Current [A] 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V 10 VGS, Gate-Source Voltage [V] 2500 Capacitance [pF] Ciss 2000 Coss 1500 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 VDS = 250V VDS = 400V 8 6 4 2 ※ Note : ID = 13A 0 -1 10 0 0 10 1 10 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation FQI13N50C Rev. C1 0 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQI13N50C — N-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 6.5 A 0.5 0.0 -100 200 -50 0 100 150 Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 14 Operation in This Area is Limited by R DS(on) 2 12 ID, Drain Current [A] 10 μs 100 μs 10 1 ms 10 ms 100 ms DC 1 10 0 10 200 o TJ, Junction Temperature [ C] 10 ID, Drain Current [A] 50 TJ, Junction Temperature [ C] o ※ Notes : 8 6 4 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 2 0 25 -1 10 0 1 10 2 10 3 10 10 50 75 ZθJC(t), Thermal Response [oC/W] Zθ JC(t), Thermal Response 125 150 Figure 10. Maximum Drain Current vs Case Temperature Figure 9. Maximum Safe Operating Area 10 100 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 0 D = 0 .5 0 .2 10 ※ N o te s : 1 . Z θ J C (t) = 0 .6 4 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) -1 0 .1 0 .0 5 0 .0 2 0 .0 1 10 10 PDM s in g le p u ls e -2 -5 10 -4 t1 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation FQI13N50C Rev. C1 4 www.fairchildsemi.com FQI13N50C — N-Channel QFET® MOSFET Package Dimensions FQI13N50C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2003 Fairchild Semiconductor Corporation FQI13N50C Rev. C1 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com FQI13N50C — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation FQI13N50C Rev. C1 6 www.fairchildsemi.com FQI13N50C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-003 ©2003 Fairchild Semiconductor Corporation FQI13N50C Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation FQI13N50C Rev. C1 8 www.fairchildsemi.com FQI13N50C — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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