GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 40 V ± 20 V ID25 ID90 ID110 TC = 25°C TC = 90°C TC = 110°C 180 136 120 A A A IF25 IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) 182 112 88 A A A Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon 1) on chip level at VGS = 10 V TVJ = 25°C TVJ = 125°C VGS(th) VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 20 V; ID = 100 A td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) typ. max. 1.9 2.8 2.5 5.3 2.5 TVJ = 25°C TVJ = 125°C inductive load VGS = +10/0 V; VDS = 15 V ID = 135 A; RG = 39 Ω; TJ = 125°C mW mW 4.5 V 5 µA µA 0.2 µA 50 110 33 30 nC nC nC 150 240 350 170 ns ns ns ns 0.12 0.51 0.003 mJ mJ mJ with heat transfer paste (IXYS test setup) 1.3 1.0 1.6 AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings K/W K/W VDS = ID·(RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307b 1-7 GMM 3x180-004X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VSD (diode) IF = 100 A; VGS = 0 V 0.9 trr QRM IRM IF = 100 A; -diF/dt = 600 A/µs VR = 15 V; TJ = 125°C 38 0.31 14 1.2 V ns µC A Component Symbol Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 TJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions 75 A -55...+175 -55...+125 °C °C 1000 V~ 50 - 250 N Characteristic Values min. typ. max. Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3 0.9 mW CP 160 pF 25 g coupling capacity between shorted pins and back side metallization Weight 1) VDS = ID·(RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307b 2-7 GMM 3x180-004X2 Leads SMD Ordering Standard Part Name & Packing Unit Marking GMM 3x180-004X2 - SMD Part Marking GMM 3x180-004X2 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty. Ordering Code Blister 28 509042 20110307b 3-7 GMM 3x180-004X2 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307b 4-7 GMM 3x180-004X2 400 1.2 IDSS = 0.25 mA VDSS VDS = 16 V 350 1.1 300 1.0 ID normalized [A] 0.9 250 200 150 100 0.8 TJ = 125°C 50 0.7 -25 0 25 50 75 100 125 0 150 TJ = 25°C 0 1 2 3 Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ ID 6 7 VGS = 20 V 15 V 10 V TVJ = 25°C 7V 300 6.5 V [A] ID 5.5 V 100 TVJ = 125°C 7V 6.5 V 200 6V [A] 6V 5.5 V 100 5V 5V 0 1 2 3 0 4 0 1 VDS [V] 2.0 RDS(on) norm. 5 RDS(on) 1.5 1.0 3.5 5V 5.5 V 6 V 6.5 V RDS(on) mΩ TVJ = 125°C 2.5 RDS(on) norm. 2.0 VGS = 10 V 15 V 20 V 1.5 RDS(on) normalized 0.5 1 50 75 100 125 0 150 TVJ [°C] Fig. 5 Typ. drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 7V 3.0 2 25 4 4.0 4 3 0 3 Fig. 4 Typical output characteristic VGS = 10 V ID = 135 A 0.0 -25 2 VDS [V] Fig. 3 Typical output characteristic 2.5 9 Fig. 2 Typical transfer characteristic 200 0 8 400 VGS = 20 V 15 V 10 V 300 5 VGS [V] TJ [°C] 400 4 1.0 0.5 0 100 200 300 400 ID [A] Fig. 6 Typ. drain source on-state resistance RDS(on) versus ID 20110307b 5-7 GMM 3x180-004X2 12 200 ID = 135 A TVJ = 25°C 10 180 160 140 8 VGS ID120 VDS = 15 V 6 100 [V] [A]80 VDS = 28 V 4 60 40 2 20 0 0 20 40 60 80 100 0 120 0 25 50 75 QG [nC] 400 VDS = 15 V VGS = +10/0 V TVJ = 125°C t 0.2 td(on) [mJ] 0.6 600 0.5 500 0.4 VDS = 15 V VGS = +10/0 V 400 [ns] [mJ] td(off) 0.3 RG = 39 Ω TVJ = 125°C 0.2 tf 0.1 10x Erec(off) 40 200 Eoff 100 Eon 0 80 120 160 200 0 0.0 300 200 [ns] Eoff 0 40 80 120 160 200 0 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 1.0 Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching 500 VDS = 15 V VGS = +10/0 V 1.0 1000 VDS = 15 V VGS = +10/0 V tr ID = 135 A Eon, t 100 ID [A] 0.8 200 300 Erec(off) 0.0 175 tr RG = 39 Ω 0.1 150 Fig. 8 Drain current ID vs. temperature TC 0.4 Eon, 125 TC [°C] Fig. 7 Gate charge characteristics 0.3 100 400 0.8 300 0.6 ID td(on) TJ = 125°C Erec(on) 0.6 = 135 A 800 TVJ = 125°C t [ns] [mJ] 0.4 td(off) 200 Eoff [mJ] 600 Eoff 0.4 t [ns] 400 tf 0.2 100 Eon 0.0 0 20 0.2 200 Erec(on) x10 40 60 80 100 0 120 0.0 0 20 40 60 80 100 0 120 RG [Ω] RG [Ω] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307b 6-7 GMM 3x180-004X2 20 VR = 15 V TVJ = 125°C 48 IF = 50 A 100 A 150 A 16 44 trr IRM 12 40 150 A [ns] [A] 100 A 36 4 50 A 32 200 300 400 500 600 700 0 200 800 300 400 500 600 700 800 -diF /dt [A/µs] -diF /dt [A/µs] Fig. 13 Typ. reverse recovery time trr of the body diodes versus di/dt Fig. 14 Typ. reverse recovery current IRM of the body diodes versus di/dt 0.6 400 350 0.5 IF = 50 A 100 A 150 A 0.4 Qrr 300 IS 0.3 [µC] 8 250 200 [A] 0.2 150 TJ = -25°C 25°C 125°C 150°C 100 0.1 50 0.0 200 400 600 0 0.0 800 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD [V] -diF /dt [A/µs] Fig. 15 Typ. reverse recovery charge Qrr of the body diodes versus di/dt Fig. 16 Typ. source current IS versus source drain voltage VSD (body diode) 0.7 0.6 0.5 Zth 0.4 [K/W] 0.3 0.2 0.1 Fig. 17 Definition of switching times 0.0 0.001 0.01 0.1 1 10 t [s] IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307b 7-7