LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SC88 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. • Energy Efficient • Miniature SC88 Surface Mount Package Saves Board Space • Pb-Free Package is available. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBSS84DW1T1G S-LBSS84DW1T1G MAXIMUM RATINGS (T J = 25°C unless otherwise noted) Symbol Value Unit VDSS 50 Vdc Gate–to–Source Voltage – Continuous VGS ± 20 Vdc Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) ID IDM 130 520 Total Power Dissipation @ TA = 25°C PD 380 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C RθJA 328 °C/W TL 260 °C Rating Drain–to–Source Voltage Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 mA ORDERING INFORMATION Device Marking Shipping LBSS84DW1T1G S-LBSS84DW1T1G PD 3000 Tape & Reel LBSS84DW1T1G S-LBSS84DW1T1G PD 10000 Tape & Reel Rev .A 1/5 LESHAN RADIO COMPANY, LTD. LBSS84DW1T1G , S-LBSS84DW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 50 – – Vdc – – – – – – 0.1 15 60 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) µAdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS – – ±100 nAdc Gate–Source Threaded Voltage (VDS = VGS, ID = 250 µ Adc) VGS(th) 0.8 – 2.0 Vdc Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) rDS(on) – 5.0 10 Ohms pF ON CHARACTERISTICS (Note 1.) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss – 42 – Output Capacitance (VDS = 5.0 Vdc) Coss – 20 – Transfer Capacitance (VDG = 5.0 Vdc) Crss – 4 – td(on) – 13 – tr – 6 – td(off) – 16 – tf – 3 – QT – 6000 – SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = –15 15 Vdc, ID = –2.5 2.5 Adc, RL = 50 Ω) Fall Time Gate Charge ns pC 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. Rev .A 2/5 LESHAN RADIO COMPANY, LTD. LBSS84DW1T1G , S-LBSS84DW1T1G Typical Characteristics (TA =25℃ Noted) Rev .A 3/5 LESHAN RADIO COMPANY, LTD. LBSS84DW1T1G , S-LBSS84DW1T1G Typical Characteristics (T =25℃ Noted) Rev .A 4/5 LESHAN RADIO COMPANY, LTD. LBSS84DW1T1G , S-LBSS84DW1T1G SC−88 (SOT−363) CASE 419B−02 ISSUE T A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. G 6 5 4 DIM A B C D G H J K N S −B− S 1 2 3 D 6 PL 0.2 (0.008) M B M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 N STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches Rev .A 5/5