FLM1213-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1213-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 42.8 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 3400 5200 mA - 3400 - mS Transconductance gm VDS = 5V, IDS = 2200mA Pinch-off Voltage Vp VDS = 5V, IDS =170mA -0.5 -1.5 -3.0 V IGS = -170µA -5.0 - - V 38.5 39.0 - dBm 5.5 6.5 - dB - 2200 2600 mA - 28 - % - - ±0.6 dB -44 -46 - dBc Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-Added Efficiency Idsr ηadd VDS = 10V f = 12.7 ~ 13.2 GHz IDS = 0.65 IDSS(Typ.) ZS = ZL = 50Ω Gain Flatness ∆G 3rd Order Intermodulation Distortion IM3 f = 13.2GHz, ∆f = 10MHz 2-Tone Test Pout = 28.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 3.0 3.5 °C/W ∆Tch 10V x Idsr x Rth - - 80 °C Channel Temperature Rise CASE STYLE: IA Edition 1.4 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1213-8F X, Ku-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER Output Power (S.C.L.) (dBc) 40 30 20 10 0 50 100 150 VDS=10V f1 = 13.2 GHz f2 = 13.21 GHz 2-tone test 35 33 Pout 31 -20 29 -30 -40 27 IM3 -50 25 19 200 OUTPUT POWER vs. FREQUENCY 25 27 OUTPUT POWER vs. INPUT POWER VDS = 10V P1dB Pin = 34.5dBm 40 32.5dBm 38 VDS = 10V f = 12.95 GHz Pout 39 38 30.5dBm 37 36 28.5dBm 35 Output Power (dBm) Output Power (dBm) 23 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level Case Temperature (°C) 40 21 36 34 45 32 30 ηadd 15 30 12.7 12.8 12.9 13.0 13.1 13.2 23 Frequency (GHz) 25 27 29 31 Input Power (dBm) 2 33 35 ηadd (%) Total Power Dissipation (W) 50 IM3 (dBc) POWER DERATING CURVE FLM1213-8F X, Ku-Band Internally Matched FET S11 S22 +j50 S21 S12 +90° +j100 +j25 12.8 12.7 12.6 +j250 +j10 12.5 GHz 12.5 GHz 12.9 13.0 13.1 13.2 13.0 13.1 13.2 12.9 13.3 13.3 12.8 13.4 12.7 13.4 12.6 12.6 10 12.7 100 13.3 13.2 1 13.1 3 4 0° 12.5 GHz 12.6 12.7 13.3 13.2 2 SCALE FOR |S21| 12.9 13.0 13.4 -j10 12.5 GHz 180° 12.8 13.4 -j250 12.8 0.1 13.1 13.0 12.9 -j25 -j100 0.2 -j50 SCALE FOR |S12| 0 -90° S-PARAMETERS VDS = 10V, IDS = 2200mA FREQUENCY (MHZ) S11 S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 12500 .171 81.0 2.291 143.6 .059 163.7 .710 -18.0 12600 .109 47.9 2.344 129.3 .061 148.1 .681 -28.4 12700 .084 6.1 2.399 118.7 .068 134.6 .658 -36.7 12800 .094 -44.1 2.443 107.7 .071 122.9 .633 -45.3 12900 .143 -85.2 2.455 93.1 .076 107.5 .592 -57.1 13000 .194 -105.7 2.443 82.2 .082 97.0 .556 -66.3 13100 .248 -121.5 2.410 70.8 .084 85.3 .516 -75.7 13200 .322 -140.0 2.371 55.3 .089 67.2 .458 -89.4 13300 .373 -153.0 2.317 44.1 .088 55.7 .411 -99.3 13400 .432 -164.4 2.239 32.6 .086 44.5 .362 -110.1 3 FLM1213-8F X, Ku-Band Internally Matched FET 1.5 Min. (0.059) Case Style "IA" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 9.7±0.15 (0.382) 2-R 1.25±0.15 (0.049) 4 2 3 1.8±0.15 (0.071) 1.5 Min. (0.059) 0.5 (0.020) 3.2 Max. (0.126) 13.0±0.15 (0.512) 1.15 (0.045) 0.2 Max. (0.008) 8.1 (0.319) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) 16.5±0.15 (0.650) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4