Fairchild FQP90N10V2 100v n-channel mosfet Datasheet

®
FQP90N10V2/FQPF90N10V2
100V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
•
•
•
•
•
•
90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V
Low gate charge ( typical 147 nC)
Low Crss ( typical 300 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
▲
G!
G DS
TO-220
TO-220F
GD S
FQP Series
●
●
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP90N10V2
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
FQPF90N10V2
Units
V
90
90 *
A
68
68 *
A
360
360 *
A
100
(Note 1)
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
2430
mJ
IAR
Avalanche Current
(Note 1)
90
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
25
4.5
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
250
1.67
83
0.55
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2004 Fairchild Semiconductor Corporation
FQP90N10V2
0.6
FQPF90N10V2
1.8
Units
°C/W
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
QFET
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
100
--
--
V
--
0.1
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = 100 V, VGS = 0 V
--
--
1
µA
VDS = 80 V, TC = 150°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
8.5
10
mΩ
--
72
--
S
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 45 A
gFS
Forward Transconductance
VDS = 40 V, ID = 45 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
4730
6150
pF
--
1180
1530
pF
--
300
390
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 90 A,
RG = 25 Ω
(Note 4, 5)
VDS = 80 V, ID = 90 A,
VGS = 10 V
(Note 4, 5)
--
52
114
ns
--
492
994
ns
--
304
618
ns
--
355
720
ns
--
147
191
nC
--
28
--
nC
--
60
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
90
A
ISM
--
--
360
A
--
--
1.4
V
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 90 A
Drain-Source Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 90 A,
dIF / dt = 100 A/µs
(Note 4)
--
114
--
ns
--
0.54
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.3mH, IAS = 90A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 90A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
Electrical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
2
10
2
10
175°C
25°C
ID, Drain Current [A]
ID, Drain Current [A]
Top :
1
10
-55°C
0
10
Notes :
1. VDS = 40V
Notes :
1. 250µs Pulse Test
2. TC = 25°
1
10
2. 250µs Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
IDR, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
2
25
VGS = 10V
20
15
VGS = 20V
10
5
10
1
10
175°C
25°C
0
10
Notes :
1. VGS = 0V
2. 250µs Pulse Test
Note : TJ = 25°
-1
10
0
0
100
200
300
400
500
0.2
600
0.4
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
11000
12
Ciss = Cgs + Cgd (Cds = shorted)
10000
Coss = Cds + Cgd
Crss = Cgd
10
8000
Ciss
7000
6000
Coss
5000
4000
Notes ;
1. VGS = 0 V
3000
Crss
2. f = 1 MHz
2000
1000
VGS, Gate-Source Voltage [V]
9000
Capacitance [pF]
0.6
VDS = 50V
VDS = 80V
8
6
4
2
Note : ID = 90A
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2004 Fairchild Semiconductor Corporation
0
0
20
40
60
80
100
120
140
160
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 45 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
TJ, Junction Temperature [°C]
ID, Drain Current [A]
ID, Drain Current [A]
10 µs
100 µs
2
1 ms
10 ms
DC
1
10
Notes :
1. TC = 25°C
0
10
150
200
10 µs
2
100 µs
10
1 ms
10 ms
DC
1
10
Notes :
1. TC = 25°C
0
10
2. TJ = 175°C
2. TJ = 175°C
3. Single Pulse
3. Single Pulse
-1
10
100
Operation in This Area
is Limited by R DS(on)
3
10
10
50
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
3
0
TJ, Junction Temperature [°C]
Figure 7. Breakdown Voltage Variation
vs Temperature
10
-50
-1
0
1
10
10
2
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP90N10V2
Figure 9-2. Maximum Safe Operating Area
for FQPF90N10V2
100
90
ID, Drain Current [A]
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC, Case Temperature [°C]
Figure 10. Maximum Drain Current
vs Case Temperature
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
Typical Characteristics
10
FQP90N10V2/FQPF90N10V2
Typical Characteristics
(Continued)
0
(t), Thermal Response
D = 0 .5
10
0 .2
-1
N o te s :
1 . Z θ J C ( t) = 0 .6 ° C / W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
0 .1
3 . T J M • T C = P D M * Z θ J C ( t)
0 .0 5
0 .0 2
PDM
-2
t1
s in g le p u ls e
Z
θJC
0 .0 1
10
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP90N10V2
ZθJC(t), Thermal Response
10
0
D = 0 .5
0 .2
N o te s :
1 . Z θ J C (t) = 1 .8 ° C /W M a x.
0 .1
10
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M • T C = P D M * Z θ J C (t)
0 .0 5
-1
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF90N10V2
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2004 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
Package Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
(1.00x45°)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Note: PKG backside isolation voltage : 4000V
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
FQP90N10V2/FQPF90N10V2
Package Dimensions
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As used herein:
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2. A critical component is any component of a life support
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device or system whose failure to perform can be
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when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
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result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I10