DC COMPONENTS CO., LTD. MJD32C DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. TO-252(DPAK) Pinning 1 = Base 2 = Collector 3 = Emitter .268(6.80) .252(6.40) .077(1.95) .065(1.65) .217(5.50) .205(5.20) Symbol Rating Unit VCBO -100 V Collector-Base Voltage Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Collector Current o Total Power Dissipation(TC=25 C) .022(0.55) .018(0.45) 2 Absolute Maximum Ratings(TA=25oC) Characteristic .063(1.60) .055(1.40) IC -3 A PD 15 W Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .228(5.80) .213(5.40) 1 2 .059(1.50) .035(0.90) 3 .035 Max (0.90) .032 Max (0.80) .110(2.80) .087(2.20) .091 Typ (2.30) .024(0.60) .018(0.45) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -100 - - V Collector-Emitter Breakdown Voltage BVCEO -100 - - V IC=-30mA, IB=0 ICES - - -20 µA VCE=-100V, VBE=0 Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) (1) Base-Emitter On Voltage (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width Test Conditions IC=-1mA, IE=0 ICEO - - -50 µA VCE=-60V, IB=0 IEBO - - -1 mA VEB=-5V, IC=0 VCE(sat) - - -1.2 V IC=-3A, IB=-375mA VBE(on) - - -1.8 V IC=-3A, VCE=-4V hFE1 25 - - - IC=-1A, VCE=-4V hFE2 10 - 50 - fT 3 - - MHz 380µs, Duty Cycle 2% IC=-3A, VCE=-4V IC=-0.5A, VCE=-10V, f=1MHz