NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • • Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5820NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX 11.5 mW @ 10 V 60 V 15 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS "20 V ID 29 A Parameter Continuous Drain Current RYJ−mb (Notes 1, 2, 3, 4) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3, 4) Power Dissipation RqJA (Notes 1, 3) Pulsed Drain Current Tmb = 25°C Steady State Tmb = 100°C Tmb = 25°C TA = 25°C Steady State TA = 25°C, tp = 10 ms TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 31 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) S A 11 MARKING DIAGRAM 8.0 PD W 3.2 TA = 100°C Current limited by package (Note 4) G 10 ID TA = 100°C TA = 25°C D W 21 Tmb = 100°C 29 A N−Channel 20 PD ID MAX 1.6 IDM 247 A IDmaxPkg 70 A TJ, Tstg −55 to 175 °C IS 17 A EAS 48 mJ TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 WDFN8 (m8FL) CASE 511AB XXXX A Y WW G 1 S S S G XXXX AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Junction−to−Mounting Board (top) − Steady State (Note 2, 3) Junction−to−Ambient − Steady State (Note 3) Symbol Value Unit RYJ−mb 7.3 °C/W RqJA 47 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 4 1 Publication Order Number: NVTFS5820NL/D NVTFS5820NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 57 IDSS Gate−to−Source Leakage Current V VGS = 0 V, VDS = 60 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance 1.5 2.3 6.2 gFS VGS = 10 V ID = 8.7 A 10.1 11.5 VGS = 4.5 V ID = 7.3 A 13.0 15 VDS = 5 V, ID = 10 A V mV/°C mW 24.6 S 1462 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 25 V 150 96 VGS = 10 V, VDS = 48 V, ID = 10 A 28 VGS = 4.5 V, VDS = 48 V, ID = 10 A 15 nC Threshold Gate Charge QG(TH) 1 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 3 V Gate Resistance RG 0.62 W td(on) 10 ns VGS = 4.5 V, VDS = 48 V, ID = 10 A 4 8 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDS = 48 V, ID = 10 A, RG = 2.5 W tf 28 19 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.79 TJ = 125°C 0.65 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 19 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR http://onsemi.com 2 V ns 13 6 15 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. 1.2 nC NVTFS5820NL TYPICAL CHARACTERISTICS 50 3.6 V 40 3.4 V 30 60 50 40 30 20 3.2 V 10 3.0 V 10 0 2.8 V 0 1 2 3 4 5 1 TJ = −55°C 2 3 4 5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.025 0.020 0.015 0.010 2 4 6 8 10 12 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.016 TJ = 25°C 0.014 VGS = 4.5 V 0.012 VGS = 10 V 0.010 0.008 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.3 1.9 TJ = 125°C VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 10 A TJ = 25°C 2.1 TJ = 25°C 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.030 0.005 VDS ≥ 10 V 70 100,000 VGS = 0 V VGS = 10 V ID = 10 A IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 3.8 V 60 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 70 80 VGS = 5 V 10 V ID, DRAIN CURRENT (A) 80 10,000 1.7 1.5 1.3 1.1 0.9 TJ = 150°C 1,000 TJ = 125°C 0.7 0.5 −50 −25 0 25 50 75 100 125 150 175 100 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NVTFS5820NL TYPICAL CHARACTERISTICS 10 VGS = 0 V TJ = 25°C 1600 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 1800 1400 Ciss 1200 1000 800 600 400 Coss 200 0 Crss 0 10 20 30 40 50 60 IS, SOURCE CURRENT (A) t, TIME (ns) 2 0 VDS = 48 V ID = 10 A TJ = 25°C 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) td(off) tf td(on) 10 1 10 100 30 30 VGS = 0 V TJ = 25°C 20 10 0 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1.0 60 VGS = 10 V Single Pulse TC = 25°C 100 ms EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) Qgd Qgs 40 tr 10 ms 1 ms 10 10 ms 0.1 4 Figure 8. Gate−to−Source Voltage vs. Total Charge 100 1 6 DRAIN−TO−SOURCE VOLTAGE (V) VDD = 48 V ID = 10 A VGS = 4.5 V 100 8 Figure 7. Capacitance Variation 1000 1 QT RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 VDS, DRAISN VOLTAGE (V) 100 ID = 37 A 50 40 30 20 10 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NVTFS5820NL RqJ(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 10 Duty Cycle = 0.5 0.2 1 0.1 0.05 0.02 0.1 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVTFS5820NLTAG 5820 WDFN8 (Pb−Free) 1500 / Tape & Reel NVTFS5820NLWFTAG 20LW WDFN8 (Pb−Free) 1500 / Tape & Reel NVTFS5820NLTWG 5820 WDFN8 (Pb−Free) 5000 / Tape & Reel NVTFS5820NLWFTWG 20LW WDFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NVTFS5820NL PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X L C 6X 0.10 C DETAIL A SEATING PLANE DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* K E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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