CY7C1399 32K x 8 3.3V Static RAM Features • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — 12/15 ns • Low active power — 255 mW (max.) • Low CMOS standby power (L) — 180 µW (max.), f=fMAX • 2.0V data retention (L) — 40 µW • Low-power alpha immune 6T cell • Plastic SOJ and TSOP packaging Functional Description is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected. An active LOW Write Enable signal (WE) controls the writing/ reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins is present on the eight data input/output pins. The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and Write Enable (WE) is HIGH. The CY7C1399 is available in 28-pin standard 300-mil-wide SOJ and TSOP Type I packages. The CY7C1399 is a high-performance 3.3V CMOS Static RAM organized as 32,768 words by 8 bits. Easy memory expansion Logic Block Diagram Pin Configurations SOJ Top View I/O0 INPUT BUFFER I/O1 ROW DECODER I/O2 SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 I/O0 I/O1 I/O2 GND 32K x 8 ARRAY I/O3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A4 A3 A2 A1 OE A0 CE I/O7 I/O6 I/O5 I/O4 I/O3 I/O4 C1399–2 I/O5 CE WE I/O6 POWER DOWN COLUMN DECODER I/O7 A 14 A 12 A 13 A 11 A 10 OE C1399–1 Selection Guide 7C1399–12 7C1399–15 7C1399–20 7C1399–25 7C1399–35 Maximum Access Time (ns) 12 15 20 25 35 Maximum Operating Current (mA) 60 55 50 45 40 Maximum CMOS Standby Current (µA) 500 500 500 500 500 Maximum CMOS Standby Current (µA) L 50 50 50 50 50 Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 March 25, 1999 CY7C1399 Pin Configuration TSOP Top View OE A1 A2 A3 A4 WE VCC A5 A6 A7 A8 A9 A10 A11 21 22 23 20 19 18 17 16 15 14 13 12 11 10 9 8 24 25 26 27 28 1 2 3 4 5 6 7 A0 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A14 A13 A12 C1399–3 Maximum Ratings Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) (Above which the useful life may be impaired. For user guidelines, not tested.) Latch-Up Current.................................................... >200 mA Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied ............................................. –55°C to +125°C Operating Range Supply Voltage on VCC to Relative GND[1] .... –0.5V to +4.6V Range Ambient Temperature VCC DC Voltage Applied to Outputs in High Z State[1] ....................................–0.5V to VCC + 0.5V Commercial 0°C to +70°C 3.3V ±300 mV –40°C to +85°C 3.3V ±300 mV Industrial DC Input Voltage[1].................................–0.5V to VCC + 0.5V Electrical Characteristics Over the Operating Range[1] Parameter Description Test Conditions 7C1399–12 7C1399–15 7C1399–20 Min. Min. Min. Max. VOH Output HIGH Voltage VCC = Min., IOH = –2.0 mA VOL Output LOW Voltage VCC = Min., IOL = 4.0 mA VIH Input HIGH Voltage 2.2 VCC +0.3V 2.2 VCC +0.3V VIL Input LOW Voltage –0.3 0.8 –0.3 IIX Input Load Current –1 +1 IOZ Output Leakage Current GND ≤ VI ≤ VCC, Output Disabled –5 +5 IOS Output Short Circuit Current[2] VCC = Max., VOUT = GND –300 ICC VCC Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC ISB1 Automatic CE Power-Down Max. VCC, CE ≥ VIH, Current — TTL Inputs VIN ≥ VIH, or VIN ≤ VIL,f = fMAX ISB2 2.4 Max. 2.4 0.4 L Automatic CE Power-Down Max. VCC, CE ≥ VCC – 0.3V, VIN ≥ Current — CMOS Inputs[3] VCC – 0.3V, or VIN ≤ 0.3V, L WE ≥VCC – 0.3V or WE ≤0.3V, f=fMAX 2.4 0.4 Unit V 0.4 V 2.2 VCC +0.3V V 0.8 –0.3 0.8 V –1 +1 –1 +1 µA –5 +5 –5 +5 µA –300 –300 mA 60 55 50 mA mA 5 5 5 3 3 3 500 500 500 50 50 50 Notes: 1. Minimum voltage is equal to – 2.0V for pulse durations of less than 20 ns. 2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 3. Device draws low standby current regardless of switching on the addresses. 2 Max. µA CY7C1399 Electrical Characteristics Over the Operating Range(continued) 7C1399–25 Parameter Description Test Conditions Min. Max. VOH Output HIGH Voltage VCC = Min., IOH = –2.0 mA VOL Output LOW Voltage VCC = Min., IOL = 4.0 mA VIH Input HIGH Voltage 2.2 VCC +0.3V VIL Input LOW Voltage –0.3 IIX Input Load Current IOZ Output Leakage Current GND ≤ VI ≤ VCC, Output Disabled IOS Output Short Circuit Current[2] VCC = Max., VOUT = GND ICC VCC Operating Supply Current ISB1 ISB2 7C1399–35 Min. 2.4 Max. Unit 2.4 V 0.4 0.4 V 2.2 VCC +0.3V V 0.8 –0.3 0.8 V –1 +1 –1 +1 µA –5 +5 –5 +5 µA –300 –300 mA VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC 45 40 mA Automatic CE Power-Down Current — TTL Inputs Max. V CC, CE ≥ VIH, VIN ≥ VIH, or VIN ≤ VIL, f = fMAX 5 5 mA 3 3 mA Automatic CE Power-Down Current — CMOS Inputs[3] Max. VCC, CE ≥ VCC–0.3V, VIN ≥ VCC – 0.3V, or VIN ≤ 0.3V, WE≥VCC–0.3V or WE≤ 0.3V, f=fMAX 500 500 µA 50 50 µA L L Capacitance[4] Parameter Description CIN: Addresses Input Capacitance Test Conditions Max. Unit TA = 25°C, f = 1 MHz, VCC = 3.3V 5 pF 6 pF 6 pF CIN: Controls COUT Output Capacitance AC Test Loads and Waveforms R1 317Ω 3.3V ALL INPUT PULSES OUTPUT 3.0V 10% R2 351Ω CL GND ≤ 3 ns INCLUDING JIG AND SCOPE Equivalent to: 90% 10% ≤ 3 ns C1399–4 THÉVENIN EQUIVALENT 167Ω OUTPUT 90% 1.73V Note: 4. Tested initially and after any design or process changes that may affect these parameters. 3 CY7C1399 Switching Characteristics Over the Operating Range[5] Parameter Description 7C1399–12 7C1399–15 7C1399–20 7C1399–25 7C1399–35 Min. Min. Min. Min. Min. Max. Max. Max. Max. Max. Unit READ CYCLE tRC Read Cycle Time tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid 12 15 20 25 35 ns tDOE OE LOW to Data Valid 5 6 7 8 10 ns tLZOE OE LOW to Low Z 12 12 [6] OE HIGH to High Z tLZCE CE LOW to Low Z[6] 3 0 5 tHZCE CE HIGH to High Z tPU CE LOW to Power-Up tPD CE HIGH to Power-Down 20 6 0 0 12 25 6 0 15 35 7 ns ns 7 ns 3 8 0 20 ns 0 3 7 ns 3 0 3 7 35 3 0 3 6 25 3 0 3 [6, 7] 20 15 3 [6, 7] tHZOE 15 ns 8 ns 0 25 ns 35 ns WRITE CYCLE[8, 9] tWC Write Cycle Time 12 15 20 25 35 ns tSCE CE LOW to Write End 8 10 12 15 20 ns tAW Address Set-Up to Write End 8 10 12 15 20 ns tHA Address Hold from Write End 0 0 0 0 0 ns tSA Address Set-Up to Write Start 0 0 0 0 0 ns tPWE WE Pulse Width 8 10 12 15 20 ns tSD Data Set-Up to Write End 7 8 10 11 12 ns tHD Data Hold from Write End 0 0 0 0 0 ns tHZWE WE LOW to High Z tLZWE [8] WE HIGH to Low Z 7 [6] 7 3 3 7 3 7 3 7 ns 3 ns Data Retention Characteristics (Over the Operating Range) Parameter Description VDR VCC for Data Retention ICCDR Data Retention Current tCDR[4] Chip Deselect to Data Retention Time tR[4] Operation Recovery Time Conditions Min. Max. 2.0 VCC = VDR = 2.0V, CE > VCC – 0.3V, L VIN > VCC – 0.3V or VIN < 0.3V Unit V 200 µA 20 µA 0 ns tRC ns Notes: 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I OL/IOH and capacitance CL = 30 pF. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. tHZOE, tHZCE, tHZWE are specified with CL = 5 pF as in AC Test Loads. Transition is measured ±500 mV from steady state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 9. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD . 4 CY7C1399 Data Retention Waveform DATA RETENTION MODE VDR ≥ 2V 3.0V VCC 3.0V tR tCDR CE C1399–5 Switching Waveforms Read Cycle No. 1[10, 11] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID C1399–6 Read Cycle No. 2 [11, 12] tRC CE tACE OE tHZOE tHZCE tDOE DATA OUT tLZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPD tPU ICC 50% 50% ISB C1399–7 Notes: 10. Device is continuously selected. OE, CE = VIL. 11. WE is HIGH for read cycle. 12. Address valid prior to or coincident with CE transition LOW. 5 CY7C1399 Switching Waveforms (continued) Write Cycle No. 1 (WE Controlled)[8, 13, 14] tWC ADDRESS CE tAW tHA tSA WE tPWE OE tSD DATA I/O NOTE 15 tHD DATAIN VALID tHZOE C1399–8 Write Cycle No. 2 (CE Controlled)[8, 13, 14] tWC ADDRESS tSCE CE tSA tAW tHA WE tSD DATA I/O tHD DATAIN VALID C1399–9 Write Cycle No. 3 (WE Controlled, OE LOW)[9, 14] tWC ADDRESS CE tAW WE tHA tSA tSD DATA I/O tHD DATA IN VALID NOTE 15 tLZWE tHZWE C1399–10 Notes: 13. Data I/O is high impedance if OE = VIH. 14. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 15. During this period, the I/Os are in the output state and input signals shold not be applied. 6 CY7C1399 Truth Table CE WE OE Input/Output Mode Power H X X High Z Deselect/Power-Down Standby (ISB) L H L Data Out Read Active (ICC) L L X Data In Write Active (ICC) L H H High Z Deselect, Output Disabled Active (ICC) Ordering Information Speed (ns) 12 15 20 25 35 Ordering Code Package Name Package Type CY7C1399–12VC V21 28-Lead Molded SOJ CY7C1399L–12VC V21 28-Lead Molded SOJ CY7C1399–12ZC Z28 28-Lead Thin Small Outline Package CY7C1399L–12ZC Z28 28-Lead Thin Small Outline Package CY7C1399–12VI V21 28-Lead Molded SOJ Operating Range Commercial Industrial CY7C1399–12ZI Z28 28-Lead Thin Small Outline Package CY7C1399–15VC V21 28-Lead Molded SOJ CY7C1399L–15VC V21 28-Lead Molded SOJ CY7C1399–15ZC Z28 28-Lead Thin Small Outline Package CY7C1399L–15ZC Z28 28-Lead Thin Small Outline Package CY7C1399–15VI V21 28-Lead Molded SOJ CY7C1399–15ZI Z28 28-Lead Thin Small Outline Package CY7C1399L–15ZI Z28 28-Lead Thin Small Outline Package CY7C1399–20VC V21 28-Lead Molded SOJ CY7C1399L–20VC V21 28-Lead Molded SOJ CY7C1399–20ZC Z28 28-Lead Thin Small Outline Package CY7C1399L–20ZC Z28 28-Lead Thin Small Outline Package CY7C1399–20VI V21 28-Lead Molded SOJ Industrial CY7C1399–25VC V21 28-Lead Molded SOJ Commercial CY7C1399L–25VC V21 28-Lead Molded SOJ CY7C1399–25ZC Z28 28-Lead Thin Small Outline Package CY7C1399L–25ZC Z28 28-Lead Thin Small Outline Package CY7C1399–35VC V21 28-Lead Molded SOJ CY7C1399L–35VC V21 28-Lead Molded SOJ CY7C1399–35ZC Z28 28-Lead Thin Small Outline Package CY7C1399L–35ZC Z28 28-Lead Thin Small Outline Package Document #: 38–00222–G 7 Commercial Industrial Commercial Commercial CY7C1399 Package Diagrams 28-Lead (300-Mil) Molded SOJ V21 51-85031-B 28-Lead Thin Small Outline Package Z28 51-85071-E © Cypress Semiconductor Corporation, 1999. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.