PD - 96236A
IRF1404ZGPbF
Features
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Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.7mΩ
G
Description
ID = 75A
S
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of
this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
TO-220AB
IRF1404ZGPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
190
130
75
750
220
c
Power Dissipation
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
d
c
g
Parameter
Junction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface
RθJA
Junction-to-Ambient
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i
W
1.5
± 20
320
480
See Fig.12a, 12b, 15, 16
W/°C
V
mJ
A
mJ
°C
i
RθJC
A
-55 to + 175
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
h
Units
i
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
Typ.
Max.
–––
0.65
0.50
–––
–––
62
Units
°C/W
1
07/07/10
IRF1404ZGPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
RDS(on)
Min. Typ. Max. Units
40
–––
–––
Breakdown Voltage Temp. Coefficient
–––
0.033
–––
Static Drain-to-Source On-Resistance
–––
2.7
3.7
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 75A
e
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
IDSS
Forward Transconductance
170
–––
–––
V
VDS = 25V, ID = 75A
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
IGSS
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Qg
Total Gate Charge
–––
100
150
Qgs
Gate-to-Source Charge
–––
31
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
42
–––
td(on)
Turn-On Delay Time
–––
18
–––
VDD = 20V
tr
Rise Time
–––
110
–––
ID = 75A
td(off)
Turn-Off Delay Time
–––
36
–––
tf
Fall Time
–––
58
–––
VGS = 10V
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Input Capacitance
–––
4340
–––
and center of die contact
VGS = 0V
Coss
Output Capacitance
–––
1030
–––
Crss
Reverse Transfer Capacitance
–––
550
–––
Coss
Output Capacitance
–––
3300
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
920
–––
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
1350
–––
VGS = 0V, VDS = 0V to 32V
ID = 75A
nC
VDS = 32V
VGS = 10V
ns
nH
RG = 3.0 Ω
e
e
VDS = 25V
pF
ƒ = 1.0MHz
f
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
75
ISM
(Body Diode)
Pulsed Source Current
–––
–––
750
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
28
42
ns
Qrr
Reverse Recovery Charge
–––
34
51
nC
ton
Forward Turn-On Time
2
c
Conditions
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF1404ZGPbF
1000
1000
VGS
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
TOP
10
4.5V
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
T J = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ( A)
20µs PULSE WIDTH
Tj = 175°C
T J = 175°C
100
10
VDS = 15V
20µs PULSE WIDTH
1
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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T J = 175°C
160
120
T J = 25°C
80
40
VDS = 15V
20µs PULSE WIDTH
0
11.0
0
40
80
120
160
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3
IRF1404ZGPbF
8000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
6000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Ciss
4000
2000
Coss
Crss
ID= 75A
VDS= 32V
VDS= 20V
16
12
8
4
0
0
1
10
0
100
VDS, Drain-to-Source Voltage (V)
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000.0
T J = 175°C
100.0
10.0
T J = 25°C
1.0
VGS = 0V
0.1
0.2
0.6
1.0
1.4
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
80
120
160
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
40
Q G Total Gate Charge (nC)
1000
100
100µsec
10
1
1.8
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF1404ZGPbF
200
2.0
ID , Drain Current (A)
160
120
80
40
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
ID = 75A
VGS = 10V
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
LIMITED BY PACKAGE
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1404ZGPbF
DRIVER
L
VDS
D.U.T
RG
20V
VGS
+
V
- DD
IAS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
600
15V
TOP
500
BOTTOM
ID
31A
53A
75A
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
QGD
4.0
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
VGS(th) Gate threshold Voltage (V)
10 V
ID = 250µA
3.0
2.0
1.0
-75 -50 -25
VGS
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage Vs. Temperature
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IRF1404ZGPbF
Avalanche Current (A)
10000
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
Duty Cycle = Single Pulse
1000
0.01
100
0.05
0.10
10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
400
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 75A
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7
IRF1404ZGPbF
D.U.T
Driver Gate Drive
+
•
•
•
•
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
*
RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
Period
P.W.
+
VDD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
VGS
RG
RD
D.U.T.
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
8
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IRF1404ZGPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF1404ZGPbF
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRFB4310GPBF
INT ERNATIONAL
RECTIFIER
LOGO
Note: "G" s uffix in part number
indicates "Halogen - Free"
Note: "P" in ass embly line pos ition
indicates "Lead - Free"
AS SEMBLY
LOT CODE
PART NUMBER
DATE CODE:
Y= LAS T DIGIT OF
CALENDAR YEAR
WW= WORK WEEK
X= FACTORY CODE
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11).
avalanche performance.
Limited by TJmax, starting TJ = 25°C, L = 0.11mH This value determined from sample failure population. 100%
RG = 25Ω, IAS = 75A, VGS =10V. Part not
tested to this value in production.
recommended for use above this value.
This is only applied to TO-220AB pakcage.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2010
10
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