MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES Á High breakdown voltage (BV CEO ≥ 40V) Á Synchronizing current (Ic(max) = 50mA) Á Wide operating temperature range (Ta = –20 to +75°C) PIN CONFIGURATION INPUT IN1→ 1 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 GND 10 FUNCTION The M54513P and M54513FP each have eight circuits consisting of NPN transistors. These ICs have resistance of 2 kΩ at inputs and of 13.6kΩ between the base and emitter. The GND is used in common in each circuit. The transistors allow synchronous flow of 50mA collector current. A maximum of 40V voltage can be applied between the collector and emitter. The M54513FP is enclosed in a molded small flat package, enabling space-saving design. OUTPUT 9 Package type 18P4G(P) NC APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 1 20 NC NC : No connection NC IN1→ 2 19 →O1 IN2→ 3 18 →O2 IN3→ 4 17 →O3 IN4→ 5 16 →O4 IN5→ 6 15 →O5 IN6→ 7 14 →O6 IN7→ 8 13 →O7 IN8→ 9 12 →O8 GND 11 OUTPUT 10 Package type 20P2N-A(FP) NC NC : No connection CIRCUIT DIAGRAM OUTPUT 2K INPUT 13.6K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol V CEO Parameter Collector-emitter voltage Conditions IC VI Collector current Input voltage Current per circuit output, L Pd Topr Power dissipation Operating temperature Ta = 25°C, when mounted on board Tstg Storage temperature min Limits typ max 0 — 40 V — — 30 mA V — VO IC Output voltage Collector current VIH “H” input voltage 0 2 VIL “L” input voltage 0 Symbol V (BR) CEO –0.5 ~ +10 V 1.79(P)/1.10(FP) –20 ~ +75 W °C °C (Unless otherwise noted, Ta = –20 ~ +75°C) Parameter ELECTRICAL CHARACTERISTICS Unit V mA –55 ~ +125 RECOMMENDED OPERATING CONDITIONS Symbol Ratings –0.5 ~ +40 50 Output, H 8 0.2 Unit V (Unless otherwise noted, Ta = –20 ~ +75°C) Parameter Limits Test conditions min 40 Collector-emitter breakdown voltage ICEO = 100µA typ+ — max — VI = 2V, IC = 10mA — 25 100 — — 70 0.85 170 1.7 80 200 — VCE (sat) Collector-emitter saturation voltage II Input current VI = 2.5V, I C = 30mA VI = 2.5V hFE DC amplification factor VCE = 4V, IC = 30mA, Ta = 25°C Unit V mV mA — + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) Symbol ton toff Parameter Turn-on time Turn-off time Test conditions min CL = 15pF (note 1) Unit max — 65 — ns — 1200 — ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits typ VO Measured device 50% 50% INPUT RL OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 2.5VP-P (2) Output conditions : RL = 300Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 50 2.0 VI = 2V Collector current Ic (mA) Power dissipation Pd (W) M54513P 1.5 M54513FP 1.0 0.5 0 0 25 50 75 20 10 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE (sat) (V) DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 50 VCE = 4V VCE = 4V 5 Collector current Ic (mA) DC amplification factor hFE 30 Ambient temperature Ta (°C) 103 7 Ta = 25°C Ta = 75°C 0 100 Ta = –20°C 40 Ta = 75°C 3 2 Ta = 25°C 102 7 Ta = –20°C 5 3 Ta = –20°C Ta = 75°C 40 Ta = 25°C 30 20 10 2 101 0 10 2 3 5 7 101 2 5 7 102 3 Collector current Ic (mA) 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Input Characteristics 5 Input current II (mA) 4 Ta = –20°C 3 Ta = 25°C 2 Ta = 75°C 1 0 0 2 4 6 8 10 Input voltage VI (V) Aug. 1999