isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ72 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·High Input Impedance ·Low Drive Requirements ·Majority Carrier Device ·DESCRITION ·Designed especially for applications such as switching regulators, switching converters, motor drivers ,relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) PARAMETER SYMBOL VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Plused 36 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ MAX UNIT Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ72 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified PARAMETER SYMBOL V(BR)DSS CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 100 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 6A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance MAX UNIT V 4 V 0.2 Ω ±100 nA VDS=100V; VGS=0 250 uA IS= 20A; VGS=0 1.6 V 530 pF 180 pF 105 pF MAX UNIT 15 ns 70 ns 75 ns 55 ns VDS=25V,VGS=0V, F=1.0MHz ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL Td(on) Tr Td(off) Tf PARAMETER CONDITIONS Turn-on Delay Time Rise Time Turn-off Delay Time VDD=30V,ID=3A VGS=10V RGS=50Ω Fall Time isc website：www.iscsemi.cn PDF pdfFactory Pro 2 MIN TYP isc & iscsemi is registered trademark www.fineprint.cn