SEMICONDUCTOR BAW56 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ·Small Package : SOT-23. E B L L ·Low Forward Voltag : VF=0.92V(Typ.). 2 A H 1 P VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current IF 250 mA IFSM 2 A Maximum (Peak) Reverse Voltage Surge Current (10ms) PD Power Dissipation Junction Temperature Storage Temperature Range J UNIT K RATING P N SYMBOL C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC 3 G ·Small Total Capacitance : CT=2.2pF(Typ.). D ·Fast Reverse Recovery Time : trr=1.6ns(Typ.). DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 225* mW SOT-23 300** Tj 150 ℃ Tstg -55～150 ℃ * Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm) Marking Lot No. H6 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.61 - VF(2) IF=10mA - 0.74 - VF(3) IF=150mA - - 1.25 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0, f=1MHz - - 4.0 pF Reverse Recovery Time trr IF=10mA - - 4.0 nS 2009. 1. 23 Revision No : 1 1/2 BAW56 10 10 2 - VF I R - VR 10 REVERSE CURRENT I R (µA) FORWARD CURRENT I F (mA) IF 3 10 10 5 Ta C =-2 5 C 1 Ta =2 Ta =1 00 C 10 -1 -2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=100 C 1 Ta=75 C 10 -1 Ta=50 C 10 -2 Ta=25 C 10 -3 0 20 FORWARD VOLTAGE VF (V) 40 t rr REVERSE RECOVERY TIME t rr (ns) TOTAL CAPACITANCE C T (pF) 2.5 f=1MHz Ta=25 C 2.0 1.5 1.0 0.5 0.2 3 1 10 30 80 REVERSE VOLTAGE VR (V) C T - VR 0 60 100 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 200 IF 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE VR (V) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01µF DUT WAVEFORM 50Ω -6V 2kΩ 50Ω 0 OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 0.1 I R IR 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2009. 1. 23 Revision No : 1 2/2