® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 2.0 Rev. 2.1 Rev.2.2 Rev. 2.3 Rev. 2.4 Rev. 2.5 Rev. 2.6 Rev. 2.7 Description Initial Issue Delete Icc1 Spec. Adding -10ns Spec. Revised VTERM to VT1 and VT2 Revised Test Condition of ISB1/IDR Added LL Spec. Revised Test Condition of ICC/ISB Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Revised PACKAGE OUTLINE DIMENSION in page 9 Added I grade in normal grade Deleted -10/12/15ns Spec. in LL grade Added -18ns Spec. In LL grade Revised PACKAGE OUTLINE DIMENSION in page 10/11 Revised ORDERING INFORMATION in page 12 Add package type: TFBGA 36 ball Revised ORDERING INFORMATION in page 14~page15 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 Issue Date Jul.25.2004 Sep.21.2004 Aug.30.2005 Feb.2.2009 Feb.2.2009 Apr.17.2009 Dec.18.2009 Apr.27.2010 May.7.2010 Aug.30.2010 Jan.23.2013 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 FEATURES GENERAL DESCRIPTION Fast access time : 10/12/15/18ns Low power consumption: Operating current : 75/70/65/55mA (TYP.) Standby current : 0.6mA (TYP.) 1μA (TYP.) LL -version Single 3.3V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 2.0V (MIN.) Green package available Package : 32-pin 300 mil SOJ 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-ball 6mm x 8mm TFBGA The LY61L1024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY61L1024 is well designed for very high speed system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY61L1024 operates from a single power supply of 3.3V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family LY61L1024 LY61L1024 LY61L1024(I) LY61L1024(I) LY61L1024(LL) LY61L1024(LLI) Operating Temperature 0 ~ 70℃ 0 ~ 70℃ -40 ~ 85℃ -40 ~ 85℃ 0 ~ 70℃ -40 ~ 85℃ Vcc Range Speed 3.15 ~ 3.6V 3.0 ~ 3.6V 3.15 ~ 3.6V 3.0 ~ 3.6V 3.0 ~ 3.6V 3.0 ~ 3.6V 10ns 12/15ns 10ns 12/15ns 18ns 18ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 0.6mA 75mA 0.6mA 70/65mA 0.6mA 75mA 0.6mA 70/65mA 1µA 55mA 1µA 55mA Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A16 DECODER DQ0-DQ7 I/O DATA CIRCUIT CE# CE2 WE# OE# CONTROL CIRCUIT 128Kx8 MEMORY ARRAY SYMBOL DESCRIPTION A0 - A16 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE#, CE2 Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection COLUMN I/O Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 ® LY61L1024 Rev. 2.7 128K X 8 BIT HIGH SPEED CMOS SRAM PIN CONFIGURATION PS: All pin out definition are relative with “Lyontek logo” orientation. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 Operating Temperature TA Storage Temperature Power Dissipation DC Output Current TSTG PD IOUT RATING -0.5 to 4.6 -0.5 to VCC+0.5 0 to 70(C grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# CE2 OE# WE# H X L L L X L H H H X X H L X X X H H L I/O OPERATION High-Z High-Z High-Z DOUT DIN H = VIH, L = VIL, X = Don't care. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 SUPPLY CURRENT ISB,ISB1 ISB,ISB1 ICC ICC ICC ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS, ILO Current Output Disabled Output High Voltage VOH IOH = -4mA Output Low Voltage VOL IOL = 8mA -10 Cycle time = Min. Average Operating CE# = VIL and CE2 = VIH, -12 ICC Power supply Current II/O = 0mA -15 Others at VIL or VIH -18 CE# = VIH or CE2 = VIL ISB Others at VIL or VIH CE# ≧VCC-0.2V Normal Standby Power or CE2≦0.2V Supply Current ISB1 CE# ≧VCC-0.2V LL or CE2≦0.2V Others at 0.2V or VCC-0.2V MIN. 3.0 2.0 - 0.5 -1 TYP. 3.3 - *4 MAX. 3.6 VCC+0.5 0.6 1 UNIT V V V µA -1 - 1 µA 2.2 - 75 70 65 55 0.4 120 100 90 80 V V mA mA mA mA - 3 20 mA - 0.6 3 mA - 1 30 µA Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 UNIT pF pF ® LY61L1024 Rev. 2.7 128K X 8 BIT HIGH SPEED CMOS SRAM AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER SYM. LY61L1024-10 LY61L1024-12 LY61L1024-15 LY61L1024-18 UNIT MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Read Cycle Time tRC 10 12 15 18 ns Address Access Time tAA 10 12 15 18 ns Chip Enable Access Time tACE 10 12 15 18 ns Output Enable Access Time tOE 5 6 7 8 ns Chip Enable to Output in Low-Z tCLZ* 2 3 4 4 ns Output Enable to Output in Low-Z tOLZ* 0 0 0 0 ns Chip Disable to Output in High-Z tCHZ* 5 6 7 8 ns Output Disable to Output in High-Z tOHZ* 5 6 7 8 ns Output Hold from Address Change tOH 3 3 3 3 ns (2) WRITE CYCLE PARAMETER SYM. LY61L1024-10 LY61L1024-12 LY61L1024-15 LY61L1024-18 UNIT MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Write Cycle Time tWC 10 12 15 18 ns Address Valid to End of Write tAW 8 10 12 16 ns Chip Enable to End of Write tCW 8 10 12 16 ns Address Set-up Time tAS 0 0 0 0 ns Write Pulse Width tWP 8 9 10 11 ns Write Recovery Time tWR 0 0 0 0 ns Data to Write Time Overlap tDW 6 7 8 9 ns Data Hold from End of Write Time tDH 0 0 0 0 ns Output Active from End of Write tOW* 2 3 4 5 ns Write to Output in High-Z tWHZ* 6 7 8 9 ns *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE CE2 OE# tOE tOH tOHZ tCHZ tOLZ tCLZ Dout High-Z Data Valid High-Z Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low., CE2 = high. 3.Address must be valid prior to or coincident with CE# = low, CE2 = high; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW CE2 tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW Din (4) tDH Data Valid WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW CE2 tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Notes : 1.WE#, CE# must be high or CE2 must be low during all address transitions. 2.A write occurs during the overlap of a low CE#, high CE2, low WE#. 3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL VCC for Data Retention VDR Data Retention Current IDR Chip Disable to Data Retention Time Recovery Time tRC* = Read Cycle Time tCDR TEST CONDITION CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V VCC = 2.0V CE# ≧ VCC - 0.2V Normal or CE2 ≦ 0.2V VCC = 2.0V CE# ≧ VCC - 0.2V LL or CE2 ≦ 0.2V others at 0.2V or VCC-0.2V See Data Retention Waveforms (below) tR MIN. TYP. MAX. UNIT 2.0 - 3.6 V - 0.006 2 mA - 0.5 30 µA 0 - - ns tRC* - - ns DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) (CE# controlled) VDR ≧ 2.0V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Low Vcc Data Retention Waveform (2) (CE2 controlled) VDR ≧ 2.0V Vcc Vcc(min.) Vcc(min.) tCDR CE2 tR CE2 ≦ 0.2V VIL VIL Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 PACKAGE OUTLINE DIMENSION 32 pin 300mil SOJ Package Outline Dimension UNIT SYMBOL A A1 A2 B D E E1 e L y INCH(BASE) MM(REF) 0.148(MAX) 0.025(MIN) 0.123(MAX) 0.018(TYP) 0.825±0.005 0.335(TYP) 0.300±0.005 0.050(TYP) 0.086±0.010 0.003(MAX) 3.759(MAX) 0.635(MIN) 3.124(MAX) 0.457(TYP) 20.955±0.127 8.509(TYP) 7.620±0.127 1.270(TYP) 2.184±0.254 0.076(MAX) Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 32 pin 8mm x 20mm TSOP-I Package Outline Dimension UNIT SYM. A A1 A2 b c D E e HD L L1 y Θ INCH(BASE) 0.047 (MAX) 0.004 ±0.002 0.039 ±0.002 0.009 ±0.002 0.006 ±0.002 0.724 ±0.008 0.315 ±0.008 0.020 (TYP) 0.787 ±0.008 0.024 ±0.004 0.0315 ±0.004 0.003 (MAX) o o 0 ～5 MM(REF) 1.20 (MAX) 0.10 ±0.05 1.00 ±0.05 0.22 ±0.05 0.155 ±0.055 18.40 ±0.20 8.00 ±0.20 0.50 (TYP) 20.00 ±0.20 0.60 ±0.10 0.08 ±0.10 0.08 (MAX) o o 0 ～5 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 32 pin 8mm x 13.4mm STSOP Package Outline Dimension UNIT SYM. A A1 A2 b c D E e HD L L1 y Θ INCH(BASE) 0.049 (MAX) 0.004 ±0.002 0.039 ±0.002 0.009 ±0.002 0.006 ±0.002 0.465 ±0.008 0.315 ±0.008 0.020 (TYP) 0.528±0.008 0.02 ±0.008 0.031 ±0.005 0.003 (MAX) o o 0 ～5 MM(REF) 1.25 (MAX) 0.10 ±0.05 1.00 ±0.05 0.22 ±0.05 0.155 ±0.055 11.80 ±0.20 8.00 ±0.20 0.50 (TYP) 13.40 ±0.20. 0.50 ±0.20 0.8 ±0.125 0.076 (MAX) o o 0 ～5 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12 ® LY61L1024 Rev. 2.7 128K X 8 BIT HIGH SPEED CMOS SRAM 36 ball 6mm × 8mm TFBGA Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 13 ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 ORDERING INFORMATION Package Type 32-pin 300mil SOJ Access Time (Speed)(ns) 10 Power Type Temperature Range(℃) Ultra Low Power 0℃~70℃ -40℃~85℃ 12 Ultra Low Power 0℃~70℃ -40℃~85℃ 15 Ultra Low Power 0℃~70℃ -40℃~85℃ 18 Ultra Low Power 0℃~70℃ -40℃~85℃ 32-pin 8mmx20mm TSOP-I 10 Ultra Low Power 0℃~70℃ -40℃~85℃ 12 Ultra Low Power 0℃~70℃ -40℃~85℃ 15 Ultra Low Power 0℃~70℃ -40℃~85℃ 18 Ultra Low Power 0℃~70℃ -40℃~85℃ Packing Type Tube LY61L1024JL-10 Tape Reel LY61L1024JL-10T Tube LY61L1024JL-10I Tape Reel LY61L1024JL-10IT Tube LY61L1024JL-12 Tape Reel LY61L1024JL-12T Tube LY61L1024JL-12I Tape Reel LY61L1024JL-12IT Tube LY61L1024JL-15 Tape Reel LY61L1024JL-15T Tube LY61L1024JL-15I Tape Reel LY61L1024JL-15IT Tube LY61L1024JL-18LL Tape Reel LY61L1024JL-18LLT Tube LY61L1024JL-18LLI Tape Reel LY61L1024JL-18LLIT Tube LY61L1024LL-10 Tape Reel LY61L1024LL-10T Tube LY61L1024LL-10I Tape Reel LY61L1024LL-10IT Tube LY61L1024LL-12 Tape Reel LY61L1024LL-12T Tube LY61L1024LL-12I Tape Reel LY61L1024LL-12IT Tube LY61L1024LL-15 Tape Reel LY61L1024LL-15T Tube LY61L1024LL-15I Tape Reel LY61L1024LL-15IT Tube LY61L1024LL-18LL Tape Reel LY61L1024LL-18LLT Tube LY61L1024LL-18LLI Tape Reel LY61L1024LL-18LLIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 14 Lyontek Item No. ® LY61L1024 128K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.7 Package Type 32-pin 8mmx13.4mm STSOP Access Time (Speed)(ns) 10 Power Type Temperature Range(℃) Ultra Low Power 0℃~70℃ -40℃~85℃ 12 Ultra Low Power 0℃~70℃ -40℃~85℃ 15 Ultra Low Power 0℃~70℃ -40℃~85℃ 18 Ultra Low Power 0℃~70℃ -40℃~85℃ 36-ball 6mmx8mm TFBGA 10 Ultra Low Power 0℃~70℃ -40℃~85℃ 12 Ultra Low Power 0℃~70℃ -40℃~85℃ 15 Ultra Low Power 0℃~70℃ -40℃~85℃ 18 Ultra Low Power 0℃~70℃ -40℃~85℃ Packing Type Tube LY61L1024RL-10 Tape Reel LY61L1024RL-10T Tube LY61L1024RL-10I Tape Reel LY61L1024RL-10IT Tube LY61L1024RL-12 Tape Reel LY61L1024RL-12T Tube LY61L1024RL-12I Tape Reel LY61L1024RL-12IT Tube LY61L1024RL-15 Tape Reel LY61L1024RL-15T Tube LY61L1024RL-15I Tape Reel LY61L1024RL-15IT Tube LY61L1024RL-18LL Tape Reel LY61L1024RL-18LLT Tube LY61L1024RL-18LLI Tape Reel LY61L1024RL-18LLIT Tube LY61L1024GL-10 Tape Reel LY61L1024GL-10T Tube LY61L1024GL-10I Tape Reel LY61L1024GL-10IT Tube LY61L1024GL-12 Tape Reel LY61L1024GL-12T Tube LY61L1024GL-12I Tape Reel LY61L1024GL-12IT Tube LY61L1024GL-15 Tape Reel LY61L1024GL-15T Tube LY61L1024GL-15I Tape Reel LY61L1024GL-15IT Tube LY61L1024GL-18LL Tape Reel LY61L1024GL-18LLT Tube LY61L1024GL-18LLI Tape Reel LY61L1024GL-18LLIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 15 Lyontek Item No. ® LY61L1024 Rev. 2.7 128K X 8 BIT HIGH SPEED CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 16