MOTOROLA Order this document by MAC4DCM/D SEMICONDUCTOR TECHNICAL DATA MAC4DCM MAC4DCN TRIACS Silicon Bidirectional Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount DPAK Package • Passivated Die for Reliability and Uniformity • Blocking Voltage to 800 V MT2 • On–State Current Rating of 4.0 Amperes RMS at 108°C TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS • High Immunity to dv/dt — 500 V/s at 125°C • High Immunity to di/dt — 6.0 A/ms at 125°C G ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MAC4DCN Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MAC4DCNT4 • To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MAC4DCN–1 MT2 MT1 MT1 MT2 G CASE 369A–13 STYLE 6 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Rating Peak Repetitive Off–State Voltage (1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) Value VDRM MAC4DCM MAC4DCN On–State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108°C) Peak Non–Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 sec, TC = 108°C) Average Gate Power (t = 8.3 msec, TC = 108°C) Unit Volts 600 800 IT(RMS) Amps 4.0 ITSM 40 I2t 6.6 PGM A2sec Watts 0.5 PG(AV) 0.1 Peak Gate Current (Pulse Width ≤ 10 sec, TC = 108°C) IGM 0.5 Amps Peak Gate Voltage (Pulse Width ≤ 10 sec, TC = 108°C) VGM 5.0 Volts TJ –40 to 125 °C Tstg –40 to 150 Symbol Max Unit RJC RJA RJA 3.5 88 80 °C/W Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (2) Maximum Lead Temperature for Soldering Purposes (3) TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristics Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) Min Typ Max — — — — 0.01 2.0 — 1.3 1.6 8.0 8.0 8.0 12 18 22 35 35 35 0.5 0.5 0.5 0.2 0.8 0.8 0.8 0.4 1.3 1.3 1.3 — 6.0 22 35 — — — 30 50 20 60 80 60 Min Typ Max 6.0 8.4 — 500 1700 — IDRM TJ = 25°C TJ = 125°C Peak On–State Voltage (1) (ITM = ± 6.0 A) mA VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) TJ = 125°C Volts IGT mA VGT Holding Current (VD = 12 V, Gate Open, IT = ± 200 mA) IH Latching Current (VD = 12 V, IG = 35 mA) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IL Unit Volts mA mA DYNAMIC CHARACTERISTICS Characteristics Rate of Change of Commutating Current (1) (VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/msec, Gate Open, TJ = 125°C, f = 250 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber) See Figure 15 Critical Rate of Rise of Off–State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) Symbol di/dt(c) Unit A/ms dv/dt V/ms (1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 2 Motorola Thyristor Device Data P(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 a = 30° 120 60° 90° 115 α α 110 120° a = CONDUCTION ANGLE 180° dc 105 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 α 120° α 4.0 90° a = CONDUCTION ANGLE 3.0 2.0 60° a = 30° 1.0 0 0 1.0 2.0 3.0 4.0 IT(RMS), RMS ON–STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 125°C 10 MAXIMUM @ TJ = 25°C 1.0 0.1 1.0 0 2.0 4.0 3.0 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) 0.01 0.1 5.0 1.0 10 100 1000 10 k VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On–State Characteristics Figure 4. Transient Thermal Response 1.2 VGT, GATE TRIGGER VOLTAGE(VOLTS) 60 I GT, GATE TRIGGER CURRENT (mA) dc 180° 5.0 IT(RMS), RMS ON–STATE CURRENT (AMPS) 100 50 40 30 Q3 Q2 20 Q1 10 0 –50 6.0 4.0 r(t) , TRANSIENT RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON–STATE CURRENT (AMPS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 1.0 0.8 Q1 Q2 Q3 0.6 0.4 0.2 0 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Motorola Thyristor Device Data 125 3 60 120 50 100 IL, LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) MT2 POSITIVE 40 30 20 MT2 NEGATIVE 10 0 –50 Q2 80 60 Q1 40 Q3 20 0 –25 0 25 50 75 125 100 –25 –50 0 25 50 75 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 15 K 10 K TJ = 125°C TJ = 125°C VPK = 400 V 6.0 K STATIC dv/dt (V/ m s) STATIC dv/dt (V/ ms) 8.0 K VPK = 400 V 600 V 4.0 K 125 100 800 V 10 K 600 V 800 V 5.0 K 2.0 K 0 0 100 1000 10 K Figure 9. Exponential Static dv/dt versus Gate–MT1 Resistance, MT2(+) Figure 10. Exponential Static dv/dt versus Gate–MT1 Resistance, MT2(–) 14 K 12 K TJ = 100°C GATE OPEN GATE OPEN STATIC dv/dt (V/ m s) 8.0 K STATIC dv/dt (V/ ms) 10 K RGK, GATE–MT1 RESISTANCE (OHMS) 10 K 6.0 K 110°C 4.0 K 125°C 2.0 K TJ = 100°C 10 K 8.0 K 110°C 6.0 K 125°C 4.0 K 2.0 K 0 0 400 4 1000 100 RGK, GATE–MT1 RESISTANCE (OHMS) 500 600 700 800 400 500 600 700 VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS) Figure 11. Exponential Static dv/dt versus Peak Voltage, MT2(+) Figure 12. Exponential Static dv/dt versus Peak Voltage, MT2(–) 800 Motorola Thyristor Device Data 10 K 14 K GATE OPEN 12 K GATE OPEN VPK = 400 V VPK = 400 V STATIC dv/dt (V/ ms) STATIC dv/dt (V/ ms) 8.0 K 6.0 K 600 V 4.0 K 800 V 10 K 8.0 K 600 V 6.0 K 800 V 4.0 K 2.0 K 2.0 K 0 0 100 105 110 115 120 125 100 105 110 115 120 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2(–) 125 100 dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ ms) VPK = 400 V TJ = 125°C 75°C 100°C 10 f= tw 1 2 tw 6f I (di/dt)c = TM 1000 VDRM 1.0 0 5.0 10 15 20 25 30 35 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 15. Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5 LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC MEASURE I TRIGGER CHARGE CONTROL NON-POLAR CL TRIGGER CONTROL CHARGE 1N4007 – + 400 V 2 1N914 51 G 1 Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage 6 Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– C B V E R 4 Z A S 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE 3 U K F J L H D 2 PL G 0.13 (0.005) M INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– T CASE 369A–13 ISSUE Y Motorola Thyristor Device Data DIM A B C D E F G H J K L R S U V Z STYLE 6: PIN 1. 2. 3. 4. MT1 MT2 GATE MT2 7 Motorola reserves the right to make changes without further notice to any products herein. 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