Fairchild FDPF16N50 500v n-channel mosfet Datasheet

UniFET
TM
FDP16N50 / FDPF16N50
500V N-Channel MOSFET
Features
Description
• 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( typical 32 nC)
• Low Crss ( typical 20 pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G
G DS
TO-220
TO-220F
GD S
FDP Series
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FDP16N50
FDPF16N50
500
Unit
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
780
mJ
IAR
Avalanche Current
(Note 1)
16
A
EAR
Repetitive Avalanche Energy
(Note 1)
20
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(TC = 25°C)
- Derate above 25°C
V
16
9.6
16 *
9.6 ∗
A
A
64
64 ∗
A
4.5
V/ns
200
1.59
38.5
0.3
W
W/°C
-55 to +150
°C
300
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FDP16N50 / FDPF16N50 Rev. B
1
FDP16N50
FDPF16N50
Unit
0.63
3.3
°C/W
0.5
--
°C/W
62.5
62.5
°C/W
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
April 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP16N50
FDP16N50
TO-220
-
-
50
FDPF16N50
FDPF16N50
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.31
0.38
Ω
--
23
--
S
--
1495
1945
pF
--
235
310
pF
--
20
30
pF
--
40
90
ns
--
150
310
ns
--
65
140
ns
--
80
170
ns
--
32
45
nC
--
8.5
--
nC
--
14
--
nC
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 8A
gFS
Forward Transconductance
VDS = 40V, ID = 8A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250V, ID = 16A
RG = 25Ω
(Note 4, 5)
VDS = 400V, ID = 16A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
9.2
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
37
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 16A
--
--
1.4
V
trr
Reverse Recovery Time
--
490
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 16A
dIF/dt =100A/μs
--
5.0
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP16N50 / FDPF16N50 Rev. B
2
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
VGS
2
10
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID, Drain Current [A]
ID, Drain Current [A]
Figure 2. Transfer Characteristics
0
10
o
1
150 C
10
o
25 C
o
-55 C
* Notes :
1. 250μs Pulse Test
-1
* Notes :
1. VDS = 40V
o
10
2. TC = 25 C
2. 250μs Pulse Test
0
-1
0
10
10
1
10
10
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [Ω], Drain-Source On-Resistance
0.6
0.5
VGS = 10V
0.4
VGS = 20V
0.3
o
1
10
150oC
o
25 C
* Notes :
1. VGS = 0V
* Note : TJ = 25 C
0.2
2. 250μs Pulse Test
0
0
5
10
15
20
25
30
35
10
40
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Coss
2000
Ciss
1000
VDS = 100V
10
3000
* Note :
1. VGS = 0 V
Crss
2. f = 1 MHz
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 16A
0
-1
10
0
10
0
1
10
VDS, Drain-Source Voltage [V]
FDP16N50 / FDPF16N50 Rev. B
0
10
20
30
40
QG, Total Gate Charge [nC]
3
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250μA
0.8
-100
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 8 A
-50
0
50
100
150
0.0
-100
200
o
TJ, Junction Temperature [ C]
-50
0
50
100
150
Figure 9-1. Maximum Safe Operating Area
- FDP16N50
Figure 9-2. Maximum Safe Operating Area
- FDPF16N50
2
2
10
10
1 ms
10 ms
100 ms
DC
1
10
Operation in This Area
is Limited by R DS(on)
0
10
10 μs
ID, Drain Current [A]
ID, Drain Current [A]
10 μs
100 μs
-1
100 μs
1
10
1 ms
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
0
10
DC
-1
* Notes :
10
* Notes :
10
o
o
1. TC = 25 C
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
2. TJ = 150 C
3. Single Pulse
-2
10
200
o
TJ, Junction Temperature [ C]
-2
0
1
10
10
2
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Currentvs. Case Temperature
20
ID, Drain Current [A]
15
10
5
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
FDP16N50 / FDPF16N50 Rev. B
4
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP16N50
0
D = 0 .5
10
0 .2
-1
0 .1
Z
PDM
0 .0 5
t1
0 .0 2
* N o te s :
0 .0 1
θJC
(t), Thermal Response
10
10
t2
o
1 . Z θ J C ( t) = 0 .6 3
C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
-2
3 . T J M - T C = P D M * Z θ J C ( t)
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve - FDPF16N50
0
0 .2
0 .1
0 .0 5
10
-1
PDM
0 .0 2
t1
0 .0 1
* N o te s :
t2
1 . Z θ J C ( t) = 3 .3
θJC
(t), Thermal Response
D = 0 .5
10
Z
10
10
-5
10
-4
10
o
C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
s in g le p u ls e
-2
3 . T J M - T C = P D M * Z θ J C ( t)
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FDP16N50 / FDPF16N50 Rev. B
5
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP16N50 / FDPF16N50 Rev. B
6
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP16N50 / FDPF16N50 Rev. B
7
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.40 ±0.20
10.00 ±0.20
FDP16N50 / FDPF16N50 Rev. B
8
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
FDP16N50 / FDPF16N50 Rev. B
+0.10
0.50 –0.05
4.70 ±0.20
0.35 ±0.10
9
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Mechanical Dimensions
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx®
Across the board. Around the world.™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
CTL™
Current Transfer Logic™
DOME™
E2CMOS™
EcoSPARK®
EnSigna™
FACT Quiet Series™
FACT®
FAST®
FASTr™
FPS™
FRFET®
GlobalOptoisolator™
GTO™
HiSeC™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
MICROCOUPLER™
MicroPak™
MICROWIRE™
Motion-SPM™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR®
PACMAN™
PDP-SPM™
POP™
Power220®
Power247®
PowerEdge™
PowerSaver™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
ScalarPump™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyWire™
TruTranslation™
µSerDes™
UHC®
UniFET™
VCX™
Wire™
TM
tm
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b) support
or sustain life, and (c) whose failure to perform when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I26
10
FDP16N50 / FDPF16N50 Rev. B
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
tm
Similar pages