Chip Low Capacitance TVS Diode For ESD Protection ESD5LFN5.0 Formosa MS List List................................................................................................. 1 Package outline............................................................................... 2 Features..........................................................................................2 Mechanical data...............................................................................2 Maximum ratings ............................................................................. 2 Electrical characteristics...................................................................2 Typical characteristics...................................................................... 3 Rating and characteristic curves........................................................4 Pinning information.......................................................................... 5 Marking........................................................................................... 5 Suggested solder pad layout............................................................. 5 Packing information......................................................................... 6 Reel packing....................................................................................7 Suggested thermal profiles for soldering processes.............................7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision Page. DS-121864 2012/10/25 2015/12/11 D 7 Formosa MS Chip Low Capacitance TVS Diode For ESD Protection ESD5LFN5.0 40W Surface Mount TVS Uni-directional Low Capacitance For ESD Protection -5.0V Features Package outline • 40 Watts peak pulse power (tp=8/20 u s) • Low capacitance : 0.8pF(Max) • Low clamping voltage • Working voltages : 5.0V • Low leakage current • Provide transient protection: • 0603 0.071(1.80) 0.063(1.60) 0.033(0.85) 0.029(0.75) IEC 61000-4-2 (ESD) Level 4 IEC 61000-4-4 (EFT) 80A (5/50ns) IEC 61000-4-5 (Surge) (8/20us) Suffix "-H" indicates Halogen-free parts, ex. ΕSD5LFN5.0-H. Mechanical data • Epoxy: UL94-V0 rated flame retardant • Case: Molded plastic,0603 • Terminals: Golden Plated terminals, 0.016(0.40)Typ. solderable per MIL-STD-750,Method 2026 0.014(0.35) Typ. • Marking Code: P • Weight: Approximated 0.002gram 0.022(0.55) 0.018(0.45) Schematic & Pin Configuration 0.0236(0.60) Typ. Dimensions in inches and (millimeters) Maximum ratings (at T =25 C unless otherwise noted) o A PARAMETER Symbol CONDITIONS Peak pulse power tp = 8/20us P PP Peak pulse current tp = 8/20us (IEC 61000-4-5) I PP ESD per IEC 61000-4-2 Air discharge MIN. TYP. Operating junction temperature range Storage temperature range UNIT 40 W 2 A ±16 ESD Contact discharge MAX. ±8.0 kV TJ -55 +125 O C T STG -55 +150 O C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical characteristics (at T =25 C unless otherwise noted, V o A Part No. ESD5LFN5.0 V RWM(V) I R(uA) @V RWM Max. Max. 5.0 2.0 I T(mA) V BR(V) @I T F = 1.20V Max. @I F = 15mA) V C (V) C J (pF) @I PP=2.0A @V R=0V,f=1MHz Min. Max. Max. 6.0 20 0.8 1.0 Over voltage available upon request. O 1. V BR is measured with a pulse test current I T at anambient temperature of 25 C. 2.Surge current waveform per Figure 1. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date Revision Page. DS-121864 2012/10/25 2015/12/11 D 7 Formosa MS Chip Low Capacitance TVS Diode For ESD Protection ESD5LFN5.0 Typical characteristics (at T =25 C unless otherwise noted) o A I IF V C V BR V RWM IR IT VF V I PP Uni-Directional TVS V C : Clamping Voltage @ I PP I PP : Maximum Reverse Peak Pulse Current V RWM : Maximum Reverse Working voltage I R : Maximum Reverse Leakage Current @V RWM V BR : Breakdown voltage @I T I T : Test Current P PP : Peak Pulse Power I F : Forward Current V F : Forward Voltage @ I F C J : Max. Capacitance @V R = 0V and f = 1MHz http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date Revision Page. DS-121864 2012/10/25 2015/12/11 D 7 Rating and characteristic curves (ESD5LFN5.0) FIG.2- CLAMPING VOLTAGE VS. PEAK PULSE CURRENT 100 30 PEAK VALUE I RSM @8us tr 90 CLAMPING VOLTAGE(V) % OF PEAK PULSE CURRENT FIG.1- 8 X 20us PULSE WAVEFORM PULSE WIDTH(t P)IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8us 80 70 60 HALF VALUE = 50 I RSM 2 @20us 40 30 tP 20 8/20us waveform 25 20 15 10 5 10 0 0 0 20 40 0 80 60 1 3 2 4 PEAK PULSE CURRENT (A) t, TIME (us) FIG.3- POWER RATING DERATING CURVE 120 Mounting on glass epoxy PCBs POWER RATING(%) 100 80 60 40 20 0 0 25 50 75 100 125 150 O AMBIENT TEMPERATURE( C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date Revision Page. DS-121864 2012/10/25 2015/12/11 D 7 Formosa MS Chip Low Capacitance TVS Diode For ESD Protection ESD5LFN5.0 Pinning information Pin1 Pin2 Symbol Simplified outline Pin cathode anode 1 2 1 2 Marking Marking code Type number Cathode band Marking code 90°rotation P P ESD5LFN5.0 Example Suggested solder pad layout C A B Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 PACKAGE A B C 0603 0.032 (0.80) 0.028 (0.70) 0.036 (0.90) Page 5 Document ID Issued Date Revised Date Revision Page. DS-121864 2012/10/25 2015/12/11 D 7 Formosa MS Chip Low Capacitance TVS Diode For ESD Protection ESD5LFN5.0 Packing information P0 P1 d E F P P A B W P D2 D1 T C W1 D unit:mm Symbol Tolerance Carrier width Carrier length A 0.1 1.00 B 0.1 1.80 Carrier depth C 0.1 0.65 Sprocket hole d 0.1 D D1 D D1 D2 2.0 min 2.0 min 0.5 1.50 178.00 62.00 13.00 Item 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position 0603 E 0.1 1.75 Punch hole position F 0.05 3.50 Punch hole pitch P 0.1 4.00 Sprocket hole pitch P0 0.1 4.00 Embossment center Overall tape thickness P1 0.05 2.00 T 0.1 0.23 Tape width W 0.1 8.00 Reel width W1 1.0 11.40 Note:Devices are packed in accor dance with EIA standar 481-D and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision Page. DS-121864 2012/10/25 2015/12/11 D 7 Formosa MS Chip Low Capacitance TVS Diode For ESD Protection ESD5LFN5.0 Reel packing PACKAGE REEL SIZE 0603 7" REEL (pcs) COMPONENT SPACING (m/m) 5,000 4.0 REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) INNER BOX (m/m) (pcs) APPROX. GROSS WEIGHT (kg) 50,000 183*123*183 178 382*257*387 400,000 9.0 BOX Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) o 150 C o 200 C 60~120sec Tsmax to T L -Ramp-upRate o <3 C /sec Time maintained above: -Temperature(T L ) -Time(t L ) o 217 C 60~260sec o o 255 C- 0/ + 5 C Peak Temperature(T P ) o Time within 5 C of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 C /sec o o Time 25 C to Peak Temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 <6minutes Page 7 Document ID Issued Date Revised Date Revision Page. DS-121864 2012/10/25 2015/12/11 D 7