Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 BCW33 D.C. current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz IC = 2 mA; VCE = 5 V Noise figure at RS = 2 kW IC = 200 mA; VCE = 5 V; f = 1 kHz; B = 200 Hz Continental Device India Limited Data Sheet hFE VCB0 VCE0 ICM > 110 < 220 max. max. max. 200 450 32 32 200 420 800 Ptot Tj max. max. 250 150 mW °C fT typ. 300 MHz F < 10 dB V V mA Page 1 of 3 BCW31 BCW32 BCW33 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) IC = 2 mA Emitter–base voltage (open collector) Collector current (d.c.) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature VCB0 max. 32 V VCE0 VEB0 IC ICM Ptot Tstg Tj max. max. max. max. max. –55 to max. 32 V 5 V 100 mA 200 mA 250 mW +150 °C 150 °C THERMAL RESISTANCE From junction to ambient* Rth j–a = 500 K/W ICB0 ICB0 < < 100 nA 10 mA VBE 550 to 700 mV CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut–off current IE = 0; VCB = 32 V IE = 0; VCB = 32 V; Tj = 100 °C Base–emitter voltage IC = 2 mA; VCE = 5 V Saturation voltages IC = 10 mA; lB = 0,5 mA IC: 50 mA; lB: 2,5 mA D.C. current gain IC = 10 mA, VCE = 5 V IC = 2 mA; VCE = 5 V 120 mV 250 mV 750 mV VCEsat typ. VBEsat typ. 210 mV 850 mV BCW31 BCW32 BCW33 hFE hFE Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 10 V Transition frequency at f = 35 MHz IC = 10 mA; VCE = 5 V Noise figure at RS = 2 kW IC = 200mA; VCE = 5 V f = 1 kHz; B = 200 Hz Continental Device India Limited typ. VCEsat < VBEsat typ. Data Sheet typ. > < 90 110 220 150 200 450 270 420 800 Cc typ. 2,5 pF fT typ. 300 MHz F < 10 dB Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3